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BSZ010NE2LS5ATMA1

表面贴装型 N 通道 25 V 32A(Ta),40A(Tc) 2.1W(Ta),69W(Tc) PG-TSDSON-8-FL

产品类别:分立半导体    晶体管   

制造商:Infineon(英飞凌)

官网地址:http://www.infineon.com/

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BSZ010NE2LS5ATMA1概述
Infineon OptiMOS 5 功率晶体管是一款 N 通道 MOSFET,经优化可用于高性能降压变换器。具有卓越的耐热性能。

无卤测试符合 IEC61249-2-21 标准
超低导通电阻
BSZ010NE2LS5ATMA1规格参数
参数名称
属性值
类别
分立半导体;晶体管
厂商名称
Infineon(英飞凌)
系列
OptiMOS™ 5
包装
卷带(TR)剪切带(CT)
FET 类型
N 通道
技术
MOSFET(金属氧化物)
漏源电压(Vdss)
25 V
25°C 时电流 - 连续漏极 (Id)
32A(Ta),40A(Tc)
驱动电压(最大 Rds On,最小 Rds On)
4.5V,10V
不同 Id、Vgs 时导通电阻(最大值)
1 毫欧 @ 20A,10V
不同 Id 时 Vgs(th)(最大值)
2V @ 250µA
不同 Vgs 时栅极电荷 (Qg)(最大值)
29 nC @ 4.5 V
Vgs(最大值)
±16V
不同 Vds 时输入电容 (Ciss)(最大值)
3900 pF @ 12 V
功率耗散(最大值)
2.1W(Ta),69W(Tc)
工作温度
-55°C ~ 150°C(TJ)
安装类型
表面贴装型
供应商器件封装
PG-TSDSON-8-FL
封装/外壳
8-PowerTDFN
基本产品编号
BSZ010
BSZ010NE2LS5ATMA1文档预览
BSZ010NE2LS5
MOSFET
OptiMOS
TM
5Power-Transistor,25V
Features
•Optimizedforhighperformancebuckconverters
•Verylowon-resistanceR
DS(on)
@V
GS
=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
TSDSON-8FL
(enlarged source interconnection)
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
S1
S2
S3
G4
8D
7D
6D
5D
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..4.5V)
Value
25
1
212
30
21
Unit
V
mΩ
A
nC
nC
Type/OrderingCode
BSZ010NE2LS5
Package
PG-TSDSON-8 FL
Marking
10NE2L5
RelatedLinks
-
Final Data Sheet
1
Rev.2.2,2020-05-12
OptiMOS
TM
5Power-Transistor,25V
BSZ010NE2LS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.2,2020-05-12
OptiMOS
TM
5Power-Transistor,25V
BSZ010NE2LS5
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-16
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
212
134
118
32
848
160
16
69
2.1
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=4.5V,T
C
=100°C
V
GS
=4.5V,T
A
=25°C,
R
THJA
=60°C/W
2)
T
C
=25°C
I
D
=20A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
THJA
=60°C/W
2)
IEC climatic category; DIN IEC 68-1:
55/150/56
Continuous drain current
1)
I
D
A
Pulsed drain current
3)
Avalanche energy, single pulse
4)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm² cooling area
Symbol
R
thJC
R
thJC
R
thJA
Values
Min.
-
-
-
Typ.
-
-
-
Max.
1.8
20
60
Unit
Note/TestCondition
°C/W -
°C/W -
°C/W -
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2020-05-12
OptiMOS
TM
5Power-Transistor,25V
BSZ010NE2LS5
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
25
1.2
-
-
-
-
-
-
90
Typ.
-
-
0.1
10
10
0.8
1.0
0.7
180
Max.
-
2
1
100
100
1
1.3
1.2
-
Unit
V
V
µA
nA
mΩ
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=250µA
V
DS
=20V,V
GS
=0V,T
j
=25°C
V
DS
=20V,V
GS
=0V,T
j
=125°C
V
GS
=16V,V
DS
=0V
V
GS
=10V,I
D
=20A
V
GS
=4.5V,I
D
=20A
-
|V
DS
|≥2|I
D
|R
DS(on)max
,I
D
=20A
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
3000
1300
98
12.6
6
19.3
7.2
Max.
3900
1700
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
GS
=0V,V
DS
=12V,f=1MHz
V
DD
=12V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
V
DD
=12V,V
GS
=10V,I
D
=20A,
R
G,ext
=1.6Ω
Table6Gatechargecharacteristics
2)

Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
1)
Gate plateau voltage
Gate charge total
1)
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
Typ.
6.7
4.8
4.1
6.1
21
2.3
44.5
30
Max.
-
-
-
-
29.0
-
60
40
Unit
nC
nC
nC
nC
nC
V
nC
nC
Note/TestCondition
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to4.5V
V
DD
=12V,I
D
=20A,V
GS
=0to10V
V
DD
=12V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.2,2020-05-12
OptiMOS
TM
5Power-Transistor,25V
BSZ010NE2LS5
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Symbol
I
S
I
S,pulse
V
SD
Q
rr
Values
Min.
-
-
-
-
Typ.
-
-
0.76
20
Max.
76
848
1
-
Unit
A
A
V
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=20A,T
j
=25°C
V
R
=12V,I
F
=20A,di
F
/dt=400A/µs
Final Data Sheet
5
Rev.2.2,2020-05-12
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