IAUC120N04S6L009
OptiMOS
™
- 6 Power-Transistor
Product Summary
V
DS
R
DS(on),max
I
D
40
0.9
120
PG-TDSON-8
V
mW
A
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
1
1
Type
IAUC120N04S6L009
Package
PG-TDSON-8
Marking
6N04L009
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=25°C,
V
GS
=10V
2,3)
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=60A,
R
G,min
=25W
R
G,min
=25W
-
T
C
=25°C
-
Value
120
150
120
480
400
60
±
16
150
-55 ... +175
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2019-04-15
IAUC120N04S6L009
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R
thJC
R
thJA
-
6 cm
2
cooling area
4)
-
-
-
-
1.0
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=90µA
V
DS
=40V,
V
GS
=0V,
T
j
=25°C
V
DS
=40V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16V,
V
DS
=0V
V
GS
=4.5V,
I
D
=60A
V
GS
=10V,
I
D
=60A
40
1.2
-
-
1.6
-
-
2.0
1
µA
V
-
-
-
-
-
-
0.98
0.78
25
100
1.2
0.96
nA
mW
Rev. 1.0
page 2
2019-04-15
IAUC120N04S6L009
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
V
GS
=0V,
I
F
=60A,
T
j
=25°C
V
R
=20V,
I
F
=50A,
di
F
/dt =100A/µs
-
T
C
=25°C
-
-
-
0.8
480
1.1
V
-
120
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32V,
I
D
=120A,
V
GS
=0 to 10V
-
-
-
-
17
18
97
2.85
23
27
128
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V,
V
GS
=10V,
I
D
=120A,
R
G
=3.5W
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
6004
1640
84
7
5
39
19
7806
2132
126
-
-
-
-
ns
pF
Reverse recovery time
2)
t
rr
-
66
-
ns
Reverse recovery charge
2)
1)
2)
3)
4)
Q
rr
-
85
-
nC
Current is limited by package; with an
R
thJC
= 1K/W the chip is able to carry 308 A at 25°C.
The parameter is not subject to production test- verified by design/characterization.
The product can operate at a current of I
D
=150A for a limited period of time up to t=100h at T
c
=25 °C
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2019-04-15
IAUC120N04S6L009
1 Power dissipation
P
tot
= f(T
C
);
V
GS
= 10 V
2 Drain current
I
D
= f(T
C
);
V
GS
= 10 V
150
140
150
130
120
110
100
P
tot
[W]
100
90
I
D
[A]
50
0
0
50
100
150
200
80
70
60
50
40
30
20
10
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
10
0
0.5
100
100 µs
Z
thJC
[K/W]
I
D
[A]
10
-1
0.1
0.05
0.01
150 µs
10
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2019-04-15
IAUC120N04S6L009
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
480
440
400
360
320
280
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
12
10 V
4.5 V
3.5 V
10
2.75 V
8
R
DS(on)
[mW]
3V
I
D
[A]
240
200
160
120
80
2.75 V
3V
6
4
2
4.5 V
3.5 V
40
0
0
1
2
3
4
0
0
50
100
150
200
250
10 V
300
350
400
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 50 A;
V
GS
= 10 V
1.75
450
400
350
1.25
300
250
200
150
100
50
-55 °C
175 °C
25 °C
0
1.5
2
2.5
3
3.5
R
DS(on)
[mW]
0.75
0.25
-60
-20
20
60
100
140
180
I
D
[A]
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2019-04-15