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IAUC120N04S6L009ATMA1

表面贴装型 N 通道 40 V 150A(Tc) 150W(Tc) PG-TDSON-8-34

产品类别:分立半导体    晶体管   

制造商:Infineon(英飞凌)

官网地址:http://www.infineon.com/

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IAUC120N04S6L009ATMA1概述
Infineon OptiMOS6 40V 功率 MOS 技术采用 5x6mm2 SS08 无引线封装,具有最高质量水平和坚固性,适用于汽车应用。由 16 种产品组成的产品组合,使客户能够在应用中找到最适合的产品。所有这些都可实现市场上同类产品最佳的 FOM 和性能。新型 SS08 产品提供 120A 连续电流额定值, >比标准 DPAK 高出 25%,占其印迹面积的近一半。

AEC Q101 认证
MSL1 高达 260°C 峰值回流
工作温度 175°C
绿色产品(符合 RoHS 标准)
100% 雪崩测试
IAUC120N04S6L009ATMA1规格参数
参数名称
属性值
类别
分立半导体;晶体管
厂商名称
Infineon(英飞凌)
系列
OptiMOS™-6
包装
卷带(TR)剪切带(CT)
FET 类型
N 通道
技术
MOSFET(金属氧化物)
漏源电压(Vdss)
40 V
25°C 时电流 - 连续漏极 (Id)
150A(Tc)
驱动电压(最大 Rds On,最小 Rds On)
4.5V,10V
不同 Id、Vgs 时导通电阻(最大值)
960毫欧 @ 60A,10V
不同 Id 时 Vgs(th)(最大值)
2V @ 90µA
不同 Vgs 时栅极电荷 (Qg)(最大值)
128 nC @ 10 V
Vgs(最大值)
±16V
不同 Vds 时输入电容 (Ciss)(最大值)
7806 pF @ 25 V
功率耗散(最大值)
150W(Tc)
工作温度
-55°C ~ 175°C(TJ)
安装类型
表面贴装型
供应商器件封装
PG-TDSON-8-34
封装/外壳
8-PowerTDFN
基本产品编号
IAUC120
IAUC120N04S6L009ATMA1文档预览
IAUC120N04S6L009
OptiMOS
- 6 Power-Transistor
Product Summary
V
DS
R
DS(on),max
I
D
40
0.9
120
PG-TDSON-8
V
mW
A
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
1
1
Type
IAUC120N04S6L009
Package
PG-TDSON-8
Marking
6N04L009
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=25°C,
V
GS
=10V
2,3)
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=60A,
R
G,min
=25W
R
G,min
=25W
-
T
C
=25°C
-
Value
120
150
120
480
400
60
±
16
150
-55 ... +175
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2019-04-15
IAUC120N04S6L009
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R
thJC
R
thJA
-
6 cm
2
cooling area
4)
-
-
-
-
1.0
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=90µA
V
DS
=40V,
V
GS
=0V,
T
j
=25°C
V
DS
=40V,
V
GS
=0V,
T
j
=125°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16V,
V
DS
=0V
V
GS
=4.5V,
I
D
=60A
V
GS
=10V,
I
D
=60A
40
1.2
-
-
1.6
-
-
2.0
1
µA
V
-
-
-
-
-
-
0.98
0.78
25
100
1.2
0.96
nA
mW
Rev. 1.0
page 2
2019-04-15
IAUC120N04S6L009
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
V
GS
=0V,
I
F
=60A,
T
j
=25°C
V
R
=20V,
I
F
=50A,
di
F
/dt =100A/µs
-
T
C
=25°C
-
-
-
0.8
480
1.1
V
-
120
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32V,
I
D
=120A,
V
GS
=0 to 10V
-
-
-
-
17
18
97
2.85
23
27
128
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V,
V
GS
=10V,
I
D
=120A,
R
G
=3.5W
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
6004
1640
84
7
5
39
19
7806
2132
126
-
-
-
-
ns
pF
Reverse recovery time
2)
t
rr
-
66
-
ns
Reverse recovery charge
2)
1)
2)
3)
4)
Q
rr
-
85
-
nC
Current is limited by package; with an
R
thJC
= 1K/W the chip is able to carry 308 A at 25°C.
The parameter is not subject to production test- verified by design/characterization.
The product can operate at a current of I
D
=150A for a limited period of time up to t=100h at T
c
=25 °C
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2019-04-15
IAUC120N04S6L009
1 Power dissipation
P
tot
= f(T
C
);
V
GS
= 10 V
2 Drain current
I
D
= f(T
C
);
V
GS
= 10 V
150
140
150
130
120
110
100
P
tot
[W]
100
90
I
D
[A]
50
0
0
50
100
150
200
80
70
60
50
40
30
20
10
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
10
0
0.5
100
100 µs
Z
thJC
[K/W]
I
D
[A]
10
-1
0.1
0.05
0.01
150 µs
10
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2019-04-15
IAUC120N04S6L009
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
480
440
400
360
320
280
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
12
10 V
4.5 V
3.5 V
10
2.75 V
8
R
DS(on)
[mW]
3V
I
D
[A]
240
200
160
120
80
2.75 V
3V
6
4
2
4.5 V
3.5 V
40
0
0
1
2
3
4
0
0
50
100
150
200
250
10 V
300
350
400
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 50 A;
V
GS
= 10 V
1.75
450
400
350
1.25
300
250
200
150
100
50
-55 °C
175 °C
25 °C
0
1.5
2
2.5
3
3.5
R
DS(on)
[mW]
0.75
0.25
-60
-20
20
60
100
140
180
I
D
[A]
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2019-04-15
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