MSC025SMA120B Silicon Carbide N-Channel Power MOSFET
1
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over
silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage
applications. The MSC025SMA120B device is a 1200 V, 25 mΩ SiC MOSFET in a TO-247 package.
1.1
Features
The following are key features of the MSC025SMA120B device:
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, T
J(max)
= 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
1.2
Benefits
The following are benefits of the MSC025SMA120B device:
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need for external freewheeling diode
Lower system cost of ownership
1.3
Applications
The MSC025SMA120B device is designed for the following applications:
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution
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2.1
Device Specifications
This section shows the specifications for the MSC025SMA120B device.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings for the MSC025SMA120B device.
Table 1 • Absolute Maximum Ratings
Symbol
V
DSS
I
D
Characteristic
Drain source voltage
Continuous drain current at T
C
= 25 °C
Continuous drain current at T
C
= 100 °C
I
DM
V
GS
P
D
Pulsed drain current
1
Gate-source voltage
Total power dissipation at T
C
= 25 °C
Linear derating factor
Ratings
1200
103
73
275
23 to –10
500
3.33
V
W
W/°C
Unit
V
A
Note:
1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
The following table shows the thermal and mechanical characteristics for the MSC025SMA120B device.
Table 2 • Thermal and Mechanical Characteristics
Symbol
R
θJC
T
J
T
STG
T
L
Characteristic
Junction-to-case thermal resistance
Operating junction temperature
Storage temperature
Soldering temperature for 10 seconds (1.6 mm from case)
Mounting torque, 6-32 or M3 screw
–55
–55
Min
Typ
0.20
Max
0.30
175
150
260
10
1.1
Wt
Package weight
0.22
6.2
lbf-in
N-m
oz
g
Unit
°C/W
°C
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2.2
Electrical Performance
The following table shows the static characteristics for the MSC025SMA120B device. T
J
= 25 °C unless
otherwise specified.
Table 3 • Static Characteristics
Symbol
V
(BR) DSS
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
Characteristic
Drain-source breakdown voltage
Drain-source on resistance
1
Gate-source threshold voltage
Threshold voltage coefficient
Zero gate voltage drain current
Test Conditions
V
GS
= 0 V, I
D
= 100 µA
V
GS
= 20 V, I
D
= 40 A
V
GS
= V
DS,
I
D
= 3 mA
V
GS
= V
DS,
I
D
= 3 mA
V
DS
= 1200 V, V
GS
= 0 V
V
DS
= 1200 V, V
GS
= 0 V
T
J
= 125 °C
I
GSS
Gate-source leakage current
V
GS
= 20 V/–10 V
1.8
Min
1200
25
2.8
–3.5
100
500
±100
nA
31
Typ
Max
Unit
V
mΩ
V
mV/°C
µA
Note:
1. Pulse test: pulse width < 380 µs, duty cycle < 2%.
The following table shows the dynamic characteristics for the MSC025SMA120B device. T
J
= 25 °C unless
otherwise specified.
Table 4 • Dynamic Characteristics
Symbol
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
ESR
SCWT
Characteristic
Input capacitance
Reverse transfer
capacitance
Output capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on switching energy
2
Turn-off switching energy
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on switching energy
2
Turn-off switching energy
Equivalent series resistance
Short circuit withstand time
f = 1 MHz, 25 mV, drain short
V
DS
= 960 V, V
GS
= 20 V
V
DD
= 800 V, V
GS
= -5 V/20 V, I
D
= 40 A
R
G(ext)
= 2.5 Ω
1
,
Freewheeling diode =
MSC030SDA120B
V
DD
= 800 V, V
GS
= -5 V/20 V, I
D
= 40 A
R
G(ext)
= 2.5 Ω
1
,
Freewheeling diode =
MSC025SMA120B (Vg=-5 V)
V
GS
= –5 V/20 V, V
DD
= 800 V
I
D
= 40 A
Test Conditions
V
GS
= 0 V, V
DD
= 1000 V, V
AC
= 25 mV,
ƒ = 1 MHz
Min
Typ
3020
25
270
232
41
50
21
14
45
18
850
100
18
12
45
14
730
100
0.88
3
Ω
µs
µJ
ns
µJ
ns
nC
Max
Unit
pF
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Symbol
E
AS
Characteristic
Avalanche energy, single
pulse
Test Conditions
V
DS
= 150 V, V
GS
= 20 V, I
D
= 40 A
Min
Typ
3500
Max
Unit
mJ
Notes:
1. R
G
is total gate resistance excluding internal gate driver impedance.
2. E
on
includes energy of the freewheeling diode.
The following table shows the body diode characteristics for the MSC025SMA120B device. T
J
= 25 °C
unless otherwise specified.
Table 5 • Body Diode Characteristics
Symbol
V
SD
Characteristic
Diode forward voltage
Test Conditions
I
SD
= 40 A, V
GS
= 0 V
I
SD
= 40 A, V
GS
= –5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40 A, V
GS
= –5 V
V
DD
= 800 V
dl/dt = –1000 A/µs
Min
Typ
4.0
4.2
90
550
13.5
Max
Unit
V
V
ns
nC
A
2.3
Typical Performance Curves
This section shows the typical performance curves for the MSC025SMA120B device.
Figure 2 • Drain Current vs. Drain-to-Source Voltage
Figure 1 • Drain Current vs. Drain-to-Source Voltage
Figure 3 • Drain Current vs. Drain-to-Source Voltage
Figure 4 • Drain Current vs. Drain-to-Source Voltage
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Figure 3 • Drain Current vs. Drain-to-Source Voltage
Figure 4 • Drain Current vs. Drain-to-Source Voltage
Figure 5 • RDS(on) vs. Junction Temperature
Figure 6 • Gate Charge Characteristics
Figure 7 • Capacitance vs. Drain-to-Source Voltage
Figure 8 • IDM vs. Gate-to-Source Voltage
Figure 9 • IDM vs. VDS Third Quadrant Conduction
Figure 10 • IDM vs. VDS Third Quadrant Conduction
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