FFSP0665B
Silicon Carbide Schottky
Diode
650 V, 6 A
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
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ELECTRICAL CONNECTION
•
•
•
•
•
•
•
Max Junction Temperature 175°C
Avalanche Rated 26 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1. Cathode
2. Anode
Applications
1
•
General Purpose
•
SMPS, Solar Inverter, UPS
•
Power Switching Circuit
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, Unless otherwise specified)
Symbol
V
RRM
E
AS
I
F
Parameter
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current
@ T
C
<
150°C
Continuous Rectified Forward Current
@ T
C
<
135°C
I
F, Max
Non−Repetitive
Peak Forward
Surge Current
Non−Repetitive
Forward
Surge Current
Power Dissipation
T
C
= 25°C, 10
ms
T
C
= 150°C, 10
ms
Half−Sine Pulse,
t
p
= 8.3 ms
T
C
= 25°C
T
C
= 150°C
T
J
, T
STG
Operating and Storage Temperature
Range
Value
650
26
6.0
8.0
473
408
28
A
A
$Y
&Z
&3
&K
FFSP0665B
Unit
V
mJ
A
2
TO−220−2LD
CASE 340BB
MARKING DIAGRAM
$Y&Z&3&K
FFSP
0665B
I
F, SM
P
tot
49
8.3
−55
to +175
W
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. E
AS
of 26 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 10.2 A, V = 50 V.
©
Semiconductor Components Industries, LLC, 2019
September, 2019
−
Rev. 2
1
Publication Order Number:
FFSP0665B/D
FFSP0665B
THERMAL CHARACTERISTICS
Symbol
R
θJC
Parameter
Thermal Resistance, Junction to Case, Max.
Ratings
2.46
Unit
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FFSP0665B
Top Mark
FFSP0665B
Package
TO220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 Units
ELECTRICAL CHARACTERISTICS
T
C
= 25°C unless otherwise noted
Symbol
V
F
Forward Voltage
Parameter
Test Conditions
I
F
= 6 A, T
C
= 25°C
I
F
= 6 A, T
C
= 125°C
I
F
= 6 A, T
C
= 175°C
I
R
Reverse Current
V
R
= 650 V, T
C
= 25°C
V
R
= 650 V, T
C
= 125°C
V
R
= 650 V, T
C
= 175°C
Q
C
C
Total Capacitive Charge
Total Capacitance
V = 400 V
V
R
= 1 V, f = 100 kHz
V
R
= 200 V, f = 100 kHz
V
R
= 400 V, f = 100 kHz
Min
Typ
1.38
1.6
1.72
0.025
0.08
0.22
15
259
29
23
Max
1.7
2.0
2.4
40
80
160
nC
pF
mA
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FFSP0665B
TYPICAL CHARACTERISTICS
T
J
= 25°C Unless Otherwise Noted
12
I
F
, FORWARD CURRENT (A)
T
J
=
−55°C
T
J
= 175°C
T
J
= 125°C
I
R
, REVERSE CURRENT (A)
T
J
= 25°C
9
T
J
= 75°C
10
−6
T
J
= 175°C
10
−7
6
10
−8
T
J
= 75°C
T
J
= 25°C
10
−9
T
J
=
−55°C
0
100
200
300
400
T
J
= 125°C
3
0
0
0.5
1.0
1.5
2.0
2.5
3.0
500
600 650
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 1. Forward Characteristics
80
I
F
, PEAK FORWARD CURRENT (A)
70
P
TOT
, POWER DISSIPATION (W)
56
42
28
14
0
Figure 2. Reverse Characteristics
D = 0.1
60
D = 0.2
40
D = 0.3
D = 0.5
20
D = 1.0
0
D = 0.7
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
Figure 3. Current Derating
25
Q
C
, CAPACITIVE CHARGE (nC)
20
15
10
5
0
10
CAPACITANCE (pF)
1000
Figure 4. Power Dissipation
100
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 5. Capacitance Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSP0665B
TYPICAL CHARACTERISTICS
T
J
= 25°C Unless Otherwise Noted (continued)
6
E
C
, CAPACITIVE ENERGY (mJ)
4
2
0
0
100
200
300
400
500
600 650
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
50% Duty Cycle
20%
0.1
10%
5%
2%
0.01
1%
0.001
Single Pulse
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−2LD
CASE 340BB
ISSUE O
DATE 31 AUG 2016
A
10.67
9.65
4.09
3.50
0.36
M
3.43
2.54
B A
M
B
1.40
0.51
6.86
5.84
16.15
15.75
13.40
12.19
8.89
6.86
16.51
14.22
9.40
8.38
5°
3°
1
C
1.91
1.65
1.25
2
6.35 MAX
7°
3°
5°
3°
0.60 MAX
14.73
13.60
2.54
1.02
0.38
0.36
M
0.61
0.33
2.92
2.03
C A B
5.08
5°
3°
5°
3°
4.80
4.30
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13832G
TO−220−2LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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