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NXH100B120H3Q0STG

IGBT 模块 沟槽型场截止 2 个独立式 1200 V 50 A 186 W 底座安装 22-PIM/Q0BOOST(55x32.5)

产品类别:分立半导体    晶体管   

制造商:ON Semiconductor(安森美)

官网地址:http://www.onsemi.cn

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NXH100B120H3Q0STG概述
NXH100B120H3Q0 是一款电源模块,包含一个双升压级,由两个 50A/1200V IGBT、两个 20A/1200V SiC 二极管和两个用于 IGBT 的 25A/1600V 反并联二极管组成。包括两个用于浪涌电流限制的附加 25A/1600V 旁路整流器。包括一个板载热敏电阻。

特性:
IGBT 规格:VCE(SAT) = 1.77 V,ESW = 2180 uJ
快速 IGBT,带低 VCE (SAT),用于提高效率
25 A/1600 V 旁通和防并联二极管
低 VF 旁路二极管,可在旁路模式下提高出色的效率
SiC 整流器规格:VF = 1.44 V
SiC 二极管,确保高速切换
提供焊接引脚和压配引脚选项
安装灵活
应用
mppt 升压级
电池充电器升压级
NXH100B120H3Q0STG规格参数
参数名称
属性值
类别
分立半导体;晶体管
厂商名称
ON Semiconductor(安森美)
包装
托盘
IGBT 类型
沟槽型场截止
配置
2 个独立式
电压 - 集射极击穿(最大值)
1200 V
电流 - 集电极 (Ic)(最大值)
50 A
功率 - 最大值
186 W
不同 Vge、Ic 时 Vce(on)(最大值)
2.3V @ 15V,50A
电流 - 集电极截止(最大值)
200 µA
不同 Vce 时输入电容 (Cies)
9.075 nF @ 20 V
输入
标准
NTC 热敏电阻
工作温度
-40°C ~ 150°C(TJ)
安装类型
底座安装
封装/外壳
模块
供应商器件封装
22-PIM/Q0BOOST(55x32.5)
基本产品编号
NXH100
NXH100B120H3Q0STG文档预览
DATA SHEET
www.onsemi.com
Si/SiC Hybrid Modules
EliteSiC, Dual Boost,
1200 V, 50 A IGBT + 1200 V,
20 A SiC Diode, Q0 Package
NXH100B120H3Q0,
NXH100B120H3Q0PG-R
The NXH100B120H3Q0 is a power module containing a dual boost
stage. The integrated field stop trench IGBTs and SiC Diodes provide
lower conduction losses and switching losses, enabling designers to
achieve high efficiency and superior reliability.
Features
Q0BOOST
CASE 180AJ
SOLDER PINS
Q0BOOST
CASE 180BF
PRESS−FIT PINS
MARKING DIAGRAM
NXH100B120H3Q0xxG
ATYYWW
xx
YYWW
A
T
G
= P, PT, S or ST
= Year and Work Week Code
= Assembly Site Code
= Test Site Code
= Pb−Free Package
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti−parallel Diodes
Low Inductive Layout
Solderable Pins or Press−Fit Pins
Thermistor
Options with Pre−Applied Thermal Interface Material (TIM) and
Without Pre−Applied TIM
PIN CONNECTIONS
Typical Applications
Solar Inverter
Uninterruptible Power Supplies
Energy Storage Systems
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. NXH100B120H3Q0xG/PG−R Schematic
Diagram
©
Semiconductor Components Industries, LLC, 2016
March, 2023
Rev. 8
1
Publication Order Number:
NXH100B120H3Q0/D
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ABSOLUTE MAXIMUM RATINGS
(Note 1) T
J
= 25°C Unless Otherwise Noted
Rating
BOOST IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
Continuous Collector Current @ T
C <
80°C (T
J
= 175°C)
Continuous Collector Current @ T
C <
102°C (T
J
= 175°C)
Pulsed Collector Current (T
J
= 175°C)
Maximum Power Dissipation @ T
C
= 80°C (T
J
= 175°C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
BOOST DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ T
C <
80°C (T
J
= 175°C)
Continuous Forward Current @ T
C <
132°C (T
J
= 175°C)
Maximum Power Dissipation @ T
C
= 80°C (T
J
= 175°C)
Surge Forward Current (60 Hz single half−sine wave)
I
2
t
value (60 Hz single half−sine wave)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
BYPASS DIODE / IGBT PROTECTION DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ T
C <
80°C (T
J
= 175°C)
Continuous Forward Current @ T
C <
141°C (T
J
= 175°C)
Repetitive Peak Forward Current (T
J
= 175°C, t
p
limited by T
Jmax
)
Maximum Power Dissipation @ T
C
= 80°C (T
J
= 175°C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
V
is
3000
12.7
VRMS
mm
T
stg
−40
to 125
°C
V
RRM
I
F1
I
F2
I
FRM
P
tot
T
JMIN
T
JMAX
1600
58
25
75
91
−40
150
V
A
A
A
W
°C
°C
V
RRM
I
F1
I
F2
P
tot
I
FSM
I
2
t
T
JMIN
T
JMAX
1200
34
20
114
185
142
−40
150
V
A
A
W
A
A
2
s
°C
°C
V
CES
V
GE
I
C1
I
C2
I
Cpulse
P
tot
T
JMIN
T
JMAX
1200
±20
61
50
150
186
−40
150
V
V
A
A
A
W
°C
°C
Symbol
Value
Unit
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES
Rating
Module Operating Junction Temperature
Symbol
T
J
Min
−40
Max
150
Unit
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ELECTRICAL CHARACTERISTICS
T
J
= 25°C Unless Otherwise Noted
Parameter
BOOST IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 15 V, I
C
= 50 A, T
J
= 25°C
V
GE
= 15 V, I
C
= 50 A, T
J
= 150°C
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Thermal Resistance
chip−to−case
Thermal Resistance
chip−to−heatsink
BOOST DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
V
R
= 1200 V
I
F
= 20 A, T
J
= 25°C
I
F
= 20 A, T
J
= 150°C
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Thermal Resistance
chip−to−case
Thermal Resistance
chip−to−
heatsink
Thermal grease, Thickness
100
mm,
λ
= 2.87 W/mK
T
J
= 125°C
V
CE
= 700 V, I
C
= 50 A V
GE
=
±15
V,
R
G
= 4
W
T
J
= 25°C
V
CE
= 700 V, I
C
= 50 A V
GE
=
±15
V,
R
G
= 4
W
t
rr
Q
rr
I
RRM
di/dt
E
rr
t
rr
Q
rr
I
RRM
di/dt
E
rr
R
thJC
R
thJH
I
R
V
F
1.44
1.93
15
108
11
1500
20
16
115
12
1400
22
0.83
1.15
300
1.8
ns
nC
A
A/ms
mJ
ns
nC
A
A/ms
mJ
°C/W
°C/W
mA
V
Thermal grease, Thickness
100
mm,
λ
= 2.87 W/mK
V
CE
= 600 V, I
C
= 40 A, V
GE
= 15 V
V
CE
= 20 V, V
GE
= 0 V, f = 10 kHz
T
J
= 125°C
V
CE
= 700 V, I
C
= 50 A V
GE
=
±15
V,
R
G
= 4
W
V
GE
= V
CE
,
I
C
= 1 mA
V
GE
= 20 V, V
CE
= 0 V
T
J
= 25°C
V
CE
= 700 V, I
C
= 50 A V
GE
=
±15
V,
R
G
= 4
W
V
GE(TH)
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
g
R
thJC
R
thJH
I
CES
V
CE(sat)
4.6
1.77
1.93
5.27
44
16
203
23
700
1500
43
18
233
58
800
2600
9075
173
147
409
0.51
0.82
200
2.3
6.5
800
nC
°C/W
°C/W
pF
ns
V
nA
ns
mA
V
Test Conditions
Symbol
Min
Typ
Max
Unit
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3
NXH100B120H3Q0, NXH100B120H3Q0PG−R
ELECTRICAL CHARACTERISTICS
T
J
= 25°C Unless Otherwise Noted
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
BYPASS DIODE/IGBT PROTECTION DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
V
R
= 1600 V, T
J
= 25°C
I
F
= 25 A, T
J
= 25°C
I
F
= 25 A, T
J
= 150°C
Thermal Resistance
chip−to−case
Thermal Resistance
chip−to−
heatsink
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
Power dissipation
Power dissipation constant
B−value
B−value
B(25/50), tolerance
±3%
B(25/100), tolerance
±3%
T = 100°C
R
25
R
100
DR/R
P
D
−5
22
1486
200
2
3950
3998
5
kW
W
%
mW
mW/K
K
K
Thermal grease, Thickness
100
mm,
λ
= 2.87 W/mK
R
thJC
R
thJH
I
R
V
F
1.0
0.90
1.04
1.41
100
1.4
°C/W
°C/W
mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
NXH100B120H3Q0PG,
NXH100B120H3Q0PG−R
NXH100B120H3Q0SG
Marking
NXH100B120H3Q0PG,
NXH100B120H3Q0PG−R
NXH100B120H3Q0SG
Package
Q0BOOST
Case 180BF
(Pb−Free and Halide−Free)
Press−Fit Pins
Q0BOOST
Case 180AJ
(Pb−Free and Halide−Free)
Solder Pins
Q0BOOST
Case 180BF
(Pb−Free and Halide−Free)
Press−Fit Pins, Thermal Interface Material (TIM)
Q0BOOST
Case 180AJ
(Pb−Free and Halide−Free)
Solder Pins, Thermal Interface Material (TIM)
Shipping
24 Units / Blister Tray
24 Units / Blister Tray
NXH100B120H3Q0PTG
NXH100B120H3Q0PTG
24 Units / Blister Tray
NXH100B120H3Q0STG
NXH100B120H3Q0STG
24 Units / Blister Tray
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NXH100B120H3Q0, NXH100B120H3Q0PG−R
TYPICAL CHARACTERISTICS
Boost IGBT & IGBT Protection Diode / Bypass Diode
150
I
C
, COLLECTOR CURRENT (A)
150
T
J
= 25°C
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 V
V
GE
= 11 V
90
120
T
J
= 150°C
V
GE
= 20 V
V
GE
= 11 V
120
90
60
60
30
30
0
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
0
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. IGBT Typical Output Characteristics
150
I
C
, C O L L ECT O R CU R R EN T ( A )
80
70
I
F
, FORWARD CURRENT (A)
120
60
50
40
30
20
10
0
0
2
4
6
8
10
12
Figure 3. IGBT Typical Output Characteristics
90
60
150°C
150°C
25°C
30
25°C
0
V
GE
, GATE−EMITTER VOLTAGE (V)
0,0
0,5
1,0
1,5
V
F
, FORWARD VOLTAGE (V)
Figure 4. IGBT Typical Transfer Characteristics
Figure 5. Diode Forward Characteristics
Figure 6. FBSOA
Figure 7. RBSOA
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