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NXH80T120L2Q0P2TG

IGBT 模块 沟槽型场截止 三级反相器 底座安装 20-PIM/Q0PACK（55x32.5）

产品类别：分立半导体    晶体管   

制造商：ON Semiconductor(安森美)

官网地址：http://www.onsemi.cn

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概述 参数 预览 同类产品
NXH80T120L2Q0P2TG概述
NXH80T120L2Q0 是一款电源模块，包含 T 型中性点夹持 (NPC) 三级变频器，由两个 80 A/1200 V 半桥 IGBT（带 40 A/1200 V 半桥二极管）和两个 50 A/600 V NPC IGBT（带两个 50 A/600 V NPC 二极管）组成。该模块还包含一个板载热敏电阻。

特性：
高速 1200V 和 650V 带低 vcesat 的带栅极晶体管
提高的效率
带预应用热传递材料（ tim ）和不带预应用 tim 的选项
安装过程更简单
可选压配引脚和焊接引脚
更广泛的模块安装过程选择
应用
太阳能逆变器
ups 逆变器
NXH80T120L2Q0P2TG规格参数
参数名称
属性值
类别
分立半导体;晶体管
厂商名称
ON Semiconductor(安森美)
包装
托盘
IGBT 类型
沟槽型场截止
配置
三级反相器
不同 Vge、Ic 时 Vce(on)（最大值）
1.75V @ 15V，50A
电流 - 集电极截止（最大值）
250 µA
输入
标准
NTC 热敏电阻
是
工作温度
-40°C ~ 150°C（TJ）
安装类型
底座安装
封装/外壳
模块
供应商器件封装
20-PIM/Q0PACK（55x32.5）
基本产品编号
NXH80
NXH80T120L2Q0P2TG文档预览
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi
and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf.
onsemi
reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using
onsemi
products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by
onsemi.
“Typical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that
onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NXH80T120L2Q0S2G/S2TG,
NXH80T120L2Q0P2G
Q0PACK Module
The NXH80T120L2Q0S2/P2G is a power module containing a
T−type neutral point clamped (NPC) three level inverter stage. The
integrated field stop trench IGBTs and fast recovery diodes provide
lower conduction losses and switching losses, enabling designers to
achieve high efficiency and superior reliability.
Features
www.onsemi.com
•
•
•
•
•
Low Switching Loss
Low V
CESAT
Compact 65.9 mm x 32.5 mm x 12 mm Package
Thermistor
Options with pre−applied thermal interface material (TIM) and
without pre−applied TIM
•
Options with solderable pins and press−fit pins
Typical Applications
Q0PACK
CASE 180AA
PRESS−FIT PINS
Q0PACK
CASE 180AB
SOLDERABLE PINS
•
Solar Inverter
•
Uninterruptable Power Supplies
15,16
Half Bridge
IGBTs & Diodes
T1
1200V/80A
17
18
5,14
D2
D3
8,9,10,11
MARKING DIAGRAMS
NXH80T120L2Q0P2G
ATYYWW
D1
NXH80T120L2Q0S2G
ATYYWW
T2
7
6
T3
13 12
Neutral Point
IGBTs & Diodes
650V/50A
NXH80T120L2Q0S2G = Specific Device Code
G = Pb−free Package
A = Assembly Site Code
T = Test Site Code
YYWW = Year and Work Week Code
2
1
T4
D4
PIN ASSIGNMENTS
19
NTC
20
12 13
11
10
9
8
7 6
5
4 3
14
15 16
17 18
19
20
2 1
3,4
Figure 1. Schematic Diagram
ORDERING INFORMATION
See detailed ordering and shipping information in the
dimensions section on page 13 of this data sheet.
©
Semiconductor Components Industries, LLC, 2017
May, 2019
−
Rev. 6
1
Publication Order Number:
NXH80T120L2Q0S2G/D
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G
Table 1. MAXIMUM RATINGS
Rating
HALF BRIDGE IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
Continuous Collector Current @ T
h
= 80°C (T
J
= 175°C)
Pulsed Collector Current (T
J
= 175°C)
Maximum Power Dissipation @ T
h
= 80°C (T
J
= 175°C)
Short Circuit Withstand Time @ V
GE
= 15 V, V
CE
= 600 V, T
J
v
150°C
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
Continuous Collector Current @ T
h
= 80°C (T
J
= 175°C)
Pulsed Collector Current (T
J
= 175°C)
Maximum Power Dissipation @ T
h
= 80°C (T
J
= 175°C)
Short Circuit Withstand Time @ V
GE
= 15 V, V
CE
= 400 V, T
J
v
150°C
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
HALF BRIDGE DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ T
h
= 80°C (T
J
= 175°C)
Repetitive Peak Forward Current (T
J
= 175°C, t
p
limited by T
Jmax
)
Maximum Power Dissipation @ T
h
= 80°C (T
J
= 175°C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE
Peak Repetitive Reverse Voltage
Continuous Forward Current @ T
h
= 80°C (T
J
= 175°C)
Repetitive Peak Forward Current (T
J
= 175°C, t
p
limited by T
Jmax
)
Maximum Power Dissipation @ T
h
= 80°C (T
J
= 175°C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
V
is
3000
12.7
V
RMS
mm
T
stg
−40
to 125
°C
V
RRM
I
F
I
FRM
P
tot
T
JMIN
T
JMAX
650
33
99
63
−40
150
V
A
A
W
°C
°C
V
RRM
I
F
I
FRM
P
tot
T
JMIN
T
JMAX
1200
28
84
73
−40
150
V
A
A
W
°C
°C
V
CES
V
GE
I
C
I
Cpulse
P
tot
T
sc
T
JMIN
T
JMAX
600
±20
49
147
86
5
−40
150
V
V
A
A
W
ms
°C
°C
V
CES
V
GE
I
C
I
Cpulse
P
tot
T
sc
T
JMIN
T
JMAX
1200
±20
67
201
158
5
−40
150
V
V
A
A
W
ms
°C
°C
Symbol
Value
Unit
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Module Operating Junction Temperature
Symbol
T
J
Min
−40
Max
150
Unit
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G
Table 3. ELECTRICAL CHARACTERISTICS
T
J
= 25°C unless otherwise noted
Parameter
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Thermal Resistance
−
chip−to−heatsink
V
CE
= 600 V, I
C
= 80 A, V
GE
= +15 V
Thermal grease,
Thickness = 76
mm
±2%,
l
= 2.9 W/mK
I
F
= 60 A, T
J
= 25°C
I
F
= 60 A, T
J
= 150°C
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Thermal Resistance
−
chip−to−heatsink
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Gate Leakage Current
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 15 V, I
C
= 50 A, T
J
= 25°C
V
GE
= 15 V, I
C
= 50 A, T
J
= 150°C
V
GE
= V
CE
, I
C
= 1.2 mA
V
GE
= 20 V, V
CE
= 0 V
V
GE(TH)
I
GES
I
CES
V
CE(sat)
–
–
–
–
–
–
1.40
1.50
5.45
–
250
1.75
–
6.4
200
V
nA
mA
V
Thermal grease,
Thickness = 76
mm
±2%,
l
= 2.9 W/mK
T
J
= 125°C
V
CE
= 350 V, I
C
= 60 A
V
GE
=
±15
V, R
G
= 4.7
W
T
J
= 25°C
V
CE
= 350 V, I
C
= 60 A
V
GE
=
±15
V, R
G
= 4.7
W
t
rr
Q
rr
I
RRM
di/dt
E
rr
t
rr
Q
rr
I
RRM
di/dt
E
rr
R
thJH
V
CE
= 20 V, V
GE
= 0 V, f = 10 kHz
T
J
= 125°C
V
CE
= 350 V, I
C
= 60 A
V
GE
=
±15
V, R
G
= 4.7
W
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 15 V, I
C
= 80 A, T
J
= 25°C
V
GE
= 15 V, I
C
= 80 A, T
J
= 150°C
V
GE
= V
CE
, I
C
= 1.5 mA
V
GE
= 20 V, V
CE
= 0 V
T
J
= 25°C
V
CE
= 350 V, I
C
= 60 A
V
GE
=
±15V,
R
G
= 4.7
W
V
GE(TH)
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
g
R
thJH
I
CES
V
CE(sat)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2.05
2.10
5.45
–
61
28
205
41
550
1100
58
30
230
63
720
1700
19400
400
340
800
0.60
300
2.85
–
6.4
300
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
nC
°C/W
pF
mJ
ns
mJ
V
nA
ns
mA
V
Test Conditions
Symbol
Min
Typ
Max
Unit
NEUTRAL POINT DIODE CHARACTERISTICS
Diode Forward Voltage
V
F
–
–
–
–
–
–
–
–
–
–
–
–
–
1.7
1.6
39
1.1
48
3400
400
78
2.0
59
1600
550
1.50
2.2
–
–
–
–
–
–
–
–
–
–
–
–
ns
mC
A
A/ms
mJ
ns
mC
A
A/ms
mJ
°C/W
V
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3
NXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G
Table 3. ELECTRICAL CHARACTERISTICS
T
J
= 25°C unless otherwise noted
Parameter
NEUTRAL POINT IGBT CHARACTERISTICS
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
Turn−off Delay Time
Fall Time
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Thermal Resistance
−
chip−to−heatsink
HALF BRIDGE DIODE CHARACTERISTICS
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of recovery current
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of recovery current
Reverse recovery energy
Thermal Resistance
−
chip−to−heatsink
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
Power dissipation
Power dissipation constant
B−value
B−value
B(25/50), tolerance
±3%
B(25/100), tolerance
±3%
T = 25°C
T = 100°C
R
25
R
100
DR/R
P
D
–
–
−5
–
–
–
–
22
1486
–
200
2
3950
3998
–
–
5
–
–
–
–
kW
W
%
mW
mW/K
K
K
Thermal grease,
Thickness = 76
mm
±2%,
l
= 2.9 W/mK
T
J
= 125°C
V
CE
= 350 V, I
C
= 60 A
V
GE
=
±15
V, R
G
= 4.7
W
I
F
= 40 A, T
J
= 25°C
I
F
= 40 A, T
J
= 150°C
T
J
= 25°C
V
CE
= 350 V, I
C
= 60 A
V
GE
=
±15
V, R
G
= 4.7
W
t
rr
Q
rr
I
RRM
di/dt
E
rr
t
rr
Q
rr
I
RRM
di/dt
E
rr
R
thJH
V
F
–
–
–
–
–
–
–
–
–
–
–
–
–
2.11
1.50
45
2.7
110
7100
1000
185
6
150
5900
1900
1.30
3.10
–
–
–
–
–
–
–
–
–
–
–
–
ns
mC
A
A/ms
mJ
ns
mC
A
A/ms
mJ
°C/W
V
V
CE
= 480 V, I
C
= 50 A, V
GE
= +15 V
Thermal grease,
Thickness = 76
mm
±2%,
l
= 2.9 W/mK
V
CE
= 20 V, V
GE
= 0 V, f = 10 kHz
T
J
= 125°C
V
CE
= 350 V, I
C
= 60 A
V
GE
=
±15
V, R
G
= 4.7
W
T
J
= 25°C
V
CE
= 350 V, I
C
= 60 A
V
GE
=
±15
V, R
G
= 4.7
W
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
g
R
thJH
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
30
19
110
23
800
480
32
18
120
35
1100
880
9400
280
250
395
1.10
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
nC
°C/W
pF
mJ
ns
mJ
ns
Test Conditions
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
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