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RGCL60TS60DGC11

IGBT 沟槽型场截止 600 V 48 A 111 W 通孔 TO-247N

产品类别:分立半导体    晶体管   

制造商:ROHM(罗姆半导体)

官网地址:https://www.rohm.com/

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RGCL60TS60DGC11概述
场截止沟道 IGBT,具有低 VCEsat。它有助于节能高效,并可用于各种高电压和高电流应用。

低集电极发射极饱和电压
软切换
内置超快速和软恢复 FRD
无铅引线电镀,符合 RoHS 标准
RGCL60TS60DGC11规格参数
参数名称
属性值
类别
分立半导体;晶体管
厂商名称
ROHM(罗姆半导体)
包装
散装
IGBT 类型
沟槽型场截止
电压 - 集射极击穿(最大值)
600 V
电流 - 集电极 (Ic)(最大值)
48 A
电流 - 集电极脉冲 (Icm)
120 A
不同 Vge、Ic 时 Vce(on)(最大值)
1.8V @ 15V,30A
功率 - 最大值
111 W
开关能量
770µJ(开),1.11mJ(关)
输入类型
标准
栅极电荷
68 nC
25°C 时 Td(开/关)值
44ns/186ns
测试条件
400V,30A,10 欧姆,15V
反向恢复时间 (trr)
58 ns
工作温度
-40°C ~ 175°C(TJ)
安装类型
通孔
封装/外壳
TO-247-3
供应商器件封装
TO-247N
基本产品编号
RGCL60
RGCL60TS60DGC11文档预览
RGCL60TS60D
650V 30A Field Stop Trench IGBT
600V
lOutline
Data
Sheet
V
CES
I
C(100°C)
V
CE(sat) (Typ.)
P
D
lFeatures
600V
30A
1.4V
111W
TO-247N
(1)(2)(3)
lInner
Circuit
(2)
*1
(1)
(3)
1) Low Collector - Emitter Saturation Voltage
2) Soft Switching
3) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
4) Pb - free Lead Plating ; RoHS Compliant
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
lPackaging
Specifications
lApplications
Partial Switching PFC
Discharge Circuit
Type
Brake for Inverter
Basic Ordering Unit (pcs)
Taping Code
Marking
lAbsolute
Maximum Ratings
(at T
C
= 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by T
jmax.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
Packaging
Reel Size (mm)
Tape Width (mm)
Tube
-
-
450
C11
RGCL60TS60D
Symbol
V
CES
V
GES
T
C
= 25°C
T
C
= 100°C
I
C
I
C
I
CP
T
C
= 25°C
T
C
= 100°C
*1
Value
600
30
48
30
120
35
20
100
111
55
-40
to +175
-55
to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
I
F
I
F
I
FP
*1
T
C
= 25°C
T
C
= 100°C
P
D
P
D
T
j
T
stg
1/11
2015.09 - Rev.A
RGCL60TS60D
lThermal
Resistance
Values
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Symbol
Min.
R
θ(j-c)
R
θ(j-c)
-
-
Typ.
-
-
Data Sheet
Unit
Max.
1.34
2.28
°C/W
°C/W
lIGBT
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Min.
Collector - Emitter Breakdown
Voltage
BV
CES
I
C
= 10μA, V
GE
= 0V
600
Typ.
-
Max.
-
V
Unit
Collector Cut - off Current
I
CES
V
CE
= 600V, V
GE
= 0V
-
-
10
μA
Gate - Emitter Leakage Current
I
GES
V
GE
=
30V,
V
CE
= 0V
-
-
200
nA
Gate - Emitter Threshold
Voltage
V
GE(th)
V
CE
= 5V, I
C
= 18.9mA
I
C
= 30A, V
GE
= 15V
4.5
5.5
6.5
V
Collector - Emitter Saturation
Voltage
V
CE(sat)
T
j
= 25°C
T
j
= 175°C
-
-
1.4
1.6
1.8
-
V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
2015.09 - Rev.A
RGCL60TS60D
lIGBT
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Values
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Switching Loss
Turn - off Switching Loss
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Conditions
Min.
V
CE
= 30V
V
GE
= 0V
f = 1MHz
V
CE
= 300V
I
C
= 30A
V
GE
= 15V
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω
T
j
= 25°C
Inductive Load
*Eon includes diode
reverse recovery
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω
T
j
= 175°C
Inductive Load
*Eon includes diode
reverse recovery
I
C
= 120A, V
CC
= 480V
Reverse Bias Safe Operating Area
Data Sheet
Unit
Typ.
1600
38
29
68
13
27
44
27
186
178
0.77
1.11
40
45
207
272
0.97
1.54
Max.
-
-
-
-
-
-
-
-
ns
-
-
-
-
-
-
-
-
-
-
-
-
-
mJ
-
-
-
ns
-
-
-
mJ
-
nC
pF
-
-
-
-
-
-
-
-
RBSOA V
P
= 600V, V
GE
= 15V
R
G
= 60Ω, T
j
= 175°C
FULL SQUARE
-
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/11
2015.09 - Rev.A
RGCL60TS60D
lFRD
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Min.
I
F
= 20A
Diode Forward Voltage
V
F
T
j
= 25°C
T
j
= 175°C
Diode Reverse Recovery Time
t
rr
I
F
= 20A
-
V
CC
= 400V
di
F
/dt = 200A/μs
-
T
j
= 25°C
-
7.4
-
0.20
-
6.3
-
-
-
-
1.45
1.25
58
Typ.
Data Sheet
Unit
Max.
1.9
-
-
V
ns
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
I
rr
A
Q
rr
μC
Diode Reverse Recovery Energy
E
rr
μJ
Diode Reverse Recovery Time
t
rr
I
F
= 20A
-
256
-
ns
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
I
rr
-
V
CC
= 400V
di
F
/dt = 200A/μs
-
T
j
= 175°C
-
10.4
-
A
Q
rr
1.35
-
μC
Diode Reverse Recovery Energy
E
rr
146.5
-
μJ
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/11
2015.09 - Rev.A
RGCL60TS60D
lElectrical
Characteristic Curves
Data Sheet
Fig.1 Power Dissipation vs. Case Temperature
140
120
Fig.2 Collector Current vs. Case Temperature
60
50
Power Dissipation : P
D
[W]
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Collector Current : I
C
[A]
40
30
20
 
10
0
0
T
j
≦175ºC
V
GE
≧15V
25
50
75
100
125
150
175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
1000
Fig.4 Reverse Bias Safe Operating Area
160
140
Collector Current : I
C
[A]
Collector Current : I
C
[A]
100
10
µs
120
100
80
60
40
20
0
T
j
≦175ºC
V
GE
=15V
0
200
400
600
800
10
100
µs
1
0.1
T
C
= 25ºC
Single Pulse
0.01
1
10
100
1000
Collector To Emitter Voltage : V
CE
[V]
Collector To Emitter Voltage : V
CE
[V]
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© 2015 ROHM Co., Ltd. All rights reserved.
5/11
2015.09 - Rev.A
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