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VT6T2T2R

PNP双极晶体管, VT6T2封装, 最大直流集电极电流100 A, 最大集电极-发射电压-50 V, 贴片安装, 6引脚

产品类别:分立半导体    晶体管   

制造商:ROHM(罗姆半导体)

官网地址:https://www.rohm.com/

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VT6T2T2R概述
ROHM VT6T2T2R 是具有额定电压为 50V的PNP双极晶体管,它主要用于 led 驱动器和切换操作,安装成本和面积可减半。
VT6T2T2R规格参数
参数名称
属性值
类别
分立半导体;晶体管
厂商名称
ROHM(罗姆半导体)
包装
卷带(TR)剪切带(CT)
晶体管类型
2 PNP(双)
电流 - 集电极 (Ic)(最大值)
100mA
电压 - 集射极击穿(最大值)
50V
不同 Ib、Ic 时 Vce 饱和压降(最大值)
400mV @ 5mA,50mA
电流 - 集电极截止(最大值)
100nA(ICBO)
不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值)
120 @ 1mA,6V
功率 - 最大值
150mW
频率 - 跃迁
300MHz
工作温度
150°C(TJ)
安装类型
表面贴装型
封装/外壳
6-SMD,扁平引线
供应商器件封装
VMT6
基本产品编号
VT6T2
VT6T2T2R文档预览
VT6T2 / EMT52
Power management (dual transistors)
Datasheet
l
Outline
fo
r
N eco
ew m
D me
es n
ig de
ns d
VT6T2
(VMT6)
Parameter
V
CEO
I
C
Tr1 and Tr2
-50V
-100mA
N
ot
SOT-563
EMT52
(EMT6)
l
Features
1) General Purpose.
2) Two 2SAR523 chips in one package.
3) Transister elements are independent,
eliminating interface.
4) Mounting cost and area can be cut in half.
l
Inner circuit
l
Application
SWITCH, LED DRIVER
l
Packaging specifications
Part No.
Package
Package
size
1212
1616
Taping
code
T2R
T2R
Basic
Reel size Tape width ordering
(mm)
(mm)
unit.(pcs)
180
180
8
8
8000
8000
R
Marking
VT6T2
EMT52
(VMT6)
SOT-563
(EMT6)
T2
T52
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/7
20151204 - Rev.003
VT6T2 / EMT52
l
Absolute maximum ratings
(T
a
= 25°C)
Datasheet
<It is the same ratings for the Tr1 and Tr2>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
VT6T2
EMT52
Junction temperature
Range of storage temperature
l
Electrical characteristics
(T
a
= 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP*1
P
D*2 *3
T
j
T
stg
Values
-50
-50
-5
-100
-200
150
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
Conditions
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
V
CB
= -50V
V
EB
= -5V
I
C
= -50mA, I
B
= -5mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -10V, I
E
= 10mA,
f = 100MHz
V
CB
= 10V, I
E
= 0A,
f = 1MHz
Values
Min.
-50
-50
-5
-
-
-
120
-
Typ.
-
-
-
-
-
-150
-
300
Max.
-
-
-
-100
-100
-400
560
-
Unit
V
V
V
nA
nA
mV
-
MHz
DC current gain
Transition frequency
Output capacitance
*1 Pw=10ms Single Pulse
-
1.6
-
pF
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/7
20151204 - Rev.003
VT6T2 / EMT52
l
Electrical characteristic curves
(T
a
= 25°C)
<For Tr1 and Tr2 in common>
Datasheet
Fig.1 Ground Emitter Propagation
Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current (I)
Fig.4 DC Current Gain vs. Collector
Current (II)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/7
20151204 - Rev.003
VT6T2 / EMT52
l
Electrical characteristic curves
(T
a
= 25°C)
<For Tr1 and Tr2 in common>
Datasheet
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (I)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
Fig.8 Gain Bandwidth Product vs.
Emitter Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/7
20151204 - Rev.003
VT6T2 / EMT52
l
Electrical characteristic curves
(T
a
=25°C)
<For Tr1 and Tr2 in common>
Datasheet
Fig.9 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
Fig.10 Safe Operating Area
Fig.11 Safe Operating Area
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/7
20151204 - Rev.003
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