T2035H-8G
Datasheet
20 A - 800 V - 150 °C 8H Triac in D²PAK
A2
Features
•
•
•
20 A high current Triac
800 V symmetrical blocking voltage
150 °C maximum junction temperature T
j
Three triggering quadrants
High noise immunity - static dV / dt
Robust dynamic turn-off commutation - (dl/dt)c
ECOPACK2
compliant component
G
A1
A2
•
•
•
•
Applications
A1
A2
G
D²PAK
•
•
•
•
•
•
Home automation Smart AC plug
Water heater, room heater and coffee machine
AC Induction and Universal Motor control
Inrush current limiter in AC DC rectifiers
Lighting and automation I/O control
General purpose AC line load control
Description
Product status link
T2035H-8G
Product summary
I
T(RMS)
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
T
j
max.
20 A
800 V
900 V
35 mA
150 °C
Specifically designed to operate at 800 V and 150 °C, the
T2035H-8G
Triac housed
in D²PAK provides an enhanced thermal management: this 20 A Triac is the right
choice for a compact drive of heavy AC loads and enables the heatsink size
reduction.
Based on the ST Snubberless high temperature technology, it offers higher specified
turn off commutation and noise immunity levels up to the T
j
max.
The
T2035H-8G
safely optimizes the control of the hardest universal motors, heaters
and inductive loads for industrial control and home appliances.
DS13157
-
Rev 3
-
December 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
T2035H-8G
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Symbol
I
T(RMS)
I
TSM
I
2
t
dl/dt
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GM
P
GM
P
G(AV)
T
stg
T
j
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current (full cycle,
T
j
initial = 25 °C)
I
2
t value for fusing
Critical rate of rise of on-state current, I
G
= 2 x I
GT
, tr
≤ 100 ns, f = 100 Hz
Repetitive peak off-state voltage
Non Repetitive peak off-state voltage
Peak gate current
Maximum gate power dissipation
Average gate power dissipation
Storage temperature range
Operating junction temperature range
t
p
= 10 ms, T
j
= 25 °C
t
p
= 20 µs, T
j
= 150 °C
T
j
= 150 °C
T
c
= 128 °C
t = 16.7 ms
t = 20 ms
t
p
= 10 ms
T
j
= 25 °C
Value
20
210
200
264
100
800
900
4
5
1
-40 to +150
-40 to +150
Unit
A
A
A
2
s
A/µs
V
V
A
W
W
°C
°C
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GD
I
L
I
H
(1)
dV/dt
(1)
(dl/dt)c
(1)
Test conditions
V
D
= 12 V, R
L
= 30 Ω
V
D
= 12 V, R
L
= 30 Ω
V
D
= 12 V, R
L
= 30 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
G
= 1.2 x I
GT
I
T
= 500 mA, gate open
V
D
= 536 V, gate open
Without snubber network
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
Quadrants
I - II - III
I - II - III
I - II - III
I - II - III
I - III
II
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Min.
Min.
Value
5
35
1.3
0.15
50
80
35
2000
20
Unit
mA
mA
V
V
mA
mA
mA
V/µs
A/ms
1. For both polarities of A2 referenced to A1.
DS13157
-
Rev 3
page 2/12
T2035H-8G
Characteristics
Table 3.
Static characteristics
Symbol
V
TM
(1)
V
TO
(1)
R
D
(1)
Test conditions
I
TM
= 28 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
R
= V
DRM
= V
RRM
V
D
= V
R
= 400 V, peak voltage
1. For both polarities of A2 referenced to A1.
T
j
25 °C
150 °C
150 °C
25 °C
150 °C
150 °C
Max.
Max.
Max.
Max.
Max.
Value
1.55
0.8
19
2
6.5
2.8
Unit
V
V
mΩ
µA
mA
mA
I
DRM
/I
RRM
Table 4.
Thermal resistance
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to ambient (S
CU
(1)
= 2 cm
2
)
Parameter
Max.
Typ.
Value
1.0
45
Unit
°C/W
°C/W
1. Scu : copper pad surface under tab, 35 µm copper thickness on FR4 PCB.
DS13157
-
Rev 3
page 3/12
T2035H-8G
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Maximum power dissipation versus on-state
RMS current
P(W)
Figure 2.
On-state RMS current versus case temperature
25
I
T(RMS)
(A)
α = 180°
25
α = 180°
20
15
10
5
0
0
2
4
6
8
I
T
(RMS)
(A)
20
15
10
180°
5
T
c(°C)
10
12
14
16
18
20
0
0
25
50
75
100
125
150
Figure 3.
On-state RMS current versus ambient
temperature (free air convection)
I
T(RMS)
(A)
Figure 4.
On-state characteristics (maximum values)
1000
I
TM
(A)
Tj max.
Vto = 0.8 V
Rd = 19 mΩ
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
25
50
T
a(°C)
1
V
TM
(V)
Tj = 150 °C
S
CU
= 2 cm² and thickness = 35 µm
α = 180°
100
10
Tj = 25 °C
75
100
125
150
0
1
2
3
4
5
Figure 5.
Relative variation of thermal impedance versus
pulse duration
1.0E+00
K = [Z
th
/R
th
]
Figure 6.
Recommended maximum case-to-ambient
thermal resistance versus ambient temperature for
different peak off-state voltages
Rth(c-a) (°C/W) (for heat sink sizing to avoid thermal runaway)
70
V
DRM
= V
RRM
= 400 V
V
DRM
= V
RRM
= 200 V
Zth(j-c)
60
1.0E-01
Zth(j-a)
50
V
DRM
= V
RRM
= 600 V
40
1.0E-02
30
V
DRM
= V
RRM
= 800 V
20
1.0E-03
t
p(s)
10
Ta (°C)
20
40
60
80
100
120
140
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03 1E+04
0
DS13157
-
Rev 3
page 4/12
T2035H-8G
Characteristics (curves)
Figure 7.
Thermal resistance junction to ambient versus
copper surface under tab
R
th(j-a)
(°C/W)
80
Figure 8.
Relative variation of leakage current versus
junction temperature for different values of blocking
voltage
IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V]
1.0E+00
Epoxy printed circuit board FR4, e
Cu
= 35 µm
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
D²PAK
1.0E-01
V
DRM
= V
RRM
= 800 V
1.0E-02
1.0E-03
V
D
= V
R
= 600 V
S
Cu
(cm²)
1.0E-04
35
40
1.0E-05
Tj(°C)
50
75
100
125
150
25
Figure 9.
Relative variation of gate trigger voltage and
current versus junction temperature (typical values)
I
GT
,V
GT
[Tj] / I
GT
,V
GT
[Tj = 25 °C]
Figure 10.
Relative variation of holding current and
latching current versus junction temperature (typical
values)
I
H
,I
L
[Tj] / I
H
,I
L
[Tj = 25 °C]
2.5
2
1.5
I
GT
Q3
1.6
I
H
I
GT
Q1-Q2
1.2
I
L
0.8
1
0.5
T
j
(°C)
V
GT
Q1-Q2-Q3
0.4
T
j
(°C)
0
-50
-25
0
25
50
75
100
125
150
0.0
-50
-25
0
25
50
75
100
125
150
Figure 11.
Surge peak on-state current versus number of
cycles
250
200
150
100
50
0
1
10
Number of cycles
Non repetitive
Tj initial = 25 °C
Figure 12.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
I
TSM
(A)
10000
I
TSM
(A)
t=20ms
T
j
initial=25°C
One cy cle
1000
dI/dt limitation:
100A/µs
I
TSM
Repetitive
Tc = 128°C
100
t p (ms)
10
100
1000
0.01
0.10
1.00
10.00
DS13157
-
Rev 3
page 5/12
