BTA316-800CT
3Q Triac
Rev.01 - 26 September 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac
will commutate the full RMS current at the maximum rated junction temperature (T
j(max)
= 150 °C)
without the aid of a snubber. It is used in applications where "high junction operating temperature
capability" is required.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High junction operating temperature capability (T
j(max)
= 150 °C)
High immunity to false turn-on by dV/dt
High voltage capability
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
•
•
•
•
Applications subject to high temperature (T
j(max)
= 150 °C)
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
junction temperature
full sine wave; T
mb
≤ 131 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C
T
j
Conditions
Values
800
16
140
150
150
Unit
V
A
A
A
°C
Absolute maximum rating
WeEn Semiconductors
BTA316-800CT
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-
T
j
= 25 °C;
Fig. 7
Min
2
2
2
-
-
500
Typ
-
-
-
-
1.3
-
Max
35
35
35
35
1.5
-
Unit
mA
mA
mA
mA
V
V/μs
3Q Triac
Symbol
I
GT
Parameter
gate trigger current
Static characteristics
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 18 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
Dynamic characteristics
200
-
-
V/μs
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/μs; gate open circuit;
snubberless condition
8
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BTA316-800CT
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
BTA316-800CT
BTA316-800CT
Marking codes
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
26 September 2017
2 / 12
WeEn Semiconductors
BTA316-800CT
3Q Triac
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I
2
t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤ 131°C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10ms; sine wave
I
G
= 70mA
Conditions
Values
800
16
140
150
98
100
2
5
0.5
-40 to 150
150
Unit
V
A
A
A
A
2
s
A/μs
A
W
W
°C
°C
I
T(RMS)
(A)
20
bidc2-001
16
131 °C
I
T(RMS)
(A)
19
18
20
bidc2-002
12
17
8
16
15
14
10
-2
4
0
-50
-10
30
70
110
150
T
mb
(°C)
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50Hz; T
mb
= 131 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA316-800CT
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©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
26 September 2017
3 / 12
WeEn Semiconductors
BTA316-800CT
bidc2-003
3Q Triac
P
tot
(W)
24
20
16
12
8
4
0
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.110
α
α = 180°
120 °
90°
60°
30°
128.4
T
mb(max)
(°C)
132
135.6
139.2
142.8
146.4
150
20
0
4
8
12
16
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
160
I
T(RMS)
(A)
bidc2-004
I
T
I
TSM
t
120
T
T
j(init)
= 25 °C max
80
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
I
TSM
(A)
10
4
I
T
bidc2-005
I
TSM
t
10
3
T
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms ;
(1) dI
T
/dt limit
Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
26 September 2017
4 / 12
WeEn Semiconductors
BTA316-800CT
3Q Triac
9. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
full cycle;
Fig. 6
half cycle;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
55
Max
0.9
1.3
-
Unit
K/W
K/W
K/W
R
th(j-a)
Z
th(j-mb)
(K/W)
10
bidc2-006
1
Unidirectiona (half cycle)
Bidirectional (full cycle)
t
p
T
10
-1
P
10
-2
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
δ=
t
T
t
p
(s)
10
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
26 September 2017
5 / 12