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BTA316-800CTQ

TRIAC 标准 800 V 16 A 通孔 TO-220AB

产品类别:分立半导体    晶闸管   

制造商:WeEn Semiconductors

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BTA316-800CTQ概述
三端双向可控硅开关元件系列(三极管用于交流电,也称为双向闸流晶体管)。 它们用于交流切换和控制应用,电流额定值 1A 至 40A 有效值。 三端双向可控硅开关元件成为用于交流电路方便的开关。
BTA316-800CTQ规格参数
参数名称
属性值
类别
分立半导体;晶闸管
厂商名称
WeEn Semiconductors
包装
散装
双向可控硅类型
标准
电压 - 断态
800 V
电流 - 通态 (It (RMS))(最大值)
16 A
电压 - 栅极触发 (Vgt)(最大值)
1 V
电流 - 非重复浪涌 50、60Hz (Itsm)
140A,150A
电流 - 栅极触发 (Igt)(最大值)
35 mA
电流 - 保持 (Ih)(最大值)
35 mA
配置
单路
工作温度
150°C(TJ)
安装类型
通孔
封装/外壳
TO-220-3
供应商器件封装
TO-220AB
基本产品编号
BTA316
BTA316-800CTQ文档预览
BTA316-800CT
3Q Triac
Rev.01 - 26 September 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac
will commutate the full RMS current at the maximum rated junction temperature (T
j(max)
= 150 °C)
without the aid of a snubber. It is used in applications where "high junction operating temperature
capability" is required.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High junction operating temperature capability (T
j(max)
= 150 °C)
High immunity to false turn-on by dV/dt
High voltage capability
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Applications subject to high temperature (T
j(max)
= 150 °C)
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
junction temperature
full sine wave; T
mb
≤ 131 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C
T
j
Conditions
Values
800
16
140
150
150
Unit
V
A
A
A
°C
Absolute maximum rating
WeEn Semiconductors
BTA316-800CT
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-
T
j
= 25 °C;
Fig. 7
Min
2
2
2
-
-
500
Typ
-
-
-
-
1.3
-
Max
35
35
35
35
1.5
-
Unit
mA
mA
mA
mA
V
V/μs
3Q Triac
Symbol
I
GT
Parameter
gate trigger current
Static characteristics
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 18 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
Dynamic characteristics
200
-
-
V/μs
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/μs; gate open circuit;
snubberless condition
8
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BTA316-800CT
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
BTA316-800CT
BTA316-800CT
Marking codes
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
26 September 2017
2 / 12
WeEn Semiconductors
BTA316-800CT
3Q Triac
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I
2
t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤ 131°C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10ms; sine wave
I
G
= 70mA
Conditions
Values
800
16
140
150
98
100
2
5
0.5
-40 to 150
150
Unit
V
A
A
A
A
2
s
A/μs
A
W
W
°C
°C
I
T(RMS)
(A)
20
bidc2-001
16
131 °C
I
T(RMS)
(A)
19
18
20
bidc2-002
12
17
8
16
15
14
10
-2
4
0
-50
-10
30
70
110
150
T
mb
(°C)
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50Hz; T
mb
= 131 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
26 September 2017
3 / 12
WeEn Semiconductors
BTA316-800CT
bidc2-003
3Q Triac
P
tot
(W)
24
20
16
12
8
4
0
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.110
α
α = 180°
120 °
90°
60°
30°
128.4
T
mb(max)
(°C)
132
135.6
139.2
142.8
146.4
150
20
0
4
8
12
16
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
160
I
T(RMS)
(A)
bidc2-004
I
T
I
TSM
t
120
T
T
j(init)
= 25 °C max
80
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
I
TSM
(A)
10
4
I
T
bidc2-005
I
TSM
t
10
3
T
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms ;
(1) dI
T
/dt limit
Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
26 September 2017
4 / 12
WeEn Semiconductors
BTA316-800CT
3Q Triac
9. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
full cycle;
Fig. 6
half cycle;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
55
Max
0.9
1.3
-
Unit
K/W
K/W
K/W
R
th(j-a)
Z
th(j-mb)
(K/W)
10
bidc2-006
1
Unidirectiona (half cycle)
Bidirectional (full cycle)
t
p
T
10
-1
P
10
-2
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
δ=
t
T
t
p
(s)
10
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BTA316-800CT
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
26 September 2017
5 / 12
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