V
DS
1200 V
115 A
16 mΩ
C3M0016120K
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features
Package
TAB
Drain
I
D
@
25˚C
R
DS(on)
•
•
•
•
•
•
•
3rd generation SiC MOSFET technology
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q
rr
)
Halogen free, RoHS compliant
Benefits
•
•
•
•
•
Drain
(Pin 1, TAB)
1
D
2 3 4
S S G
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Gate
(Pin 4)
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Applications
•
•
•
•
•
Solar inverters
EV motor drive
High voltage DC/DC converters
Switched mode power supplies
Load switch
Part Number
C3M0016120K
Package
TO 247-4
Marking
C3M0016120K
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain - Source Voltage
Gate - Source Voltage (dynamic)
Gate - Source Voltage (static)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Value
1200
-8/+19
-4/+15
115
85
250
556
-40 to
+175
260
Unit
V
V
V
A
A
W
˚C
˚C
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
AC (f >1 Hz)
Static
V
GS
= 15 V, T
C
= 25˚C
V
GS
= 15 V, T
C
= 100˚C
Pulse width t
P
limited by T
jmax
T
C
=25˚C, T
J
= 175 ˚C
Note
V
DSmax
V
GSmax
V
GSop
I
D
I
D(pulse)
P
D
T
J
, T
stg
T
L
Note 1
Note 2
Fig. 19
Fig. 20
1.6mm (0.063”) from case for 10s
Note (1): When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2): MOSFET can also safely operate at 0/+15 V
1
C3M0016120K Rev. -, 04-2019
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
E
oss
E
ON
E
OFF
E
ON
E
OFF
t
d(on)
t
r
t
d(off)
t
f
R
G(int)
Q
gs
Q
gd
Q
g
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
Turn-On Switching Energy (SiC Diode FWD)
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Min.
1200
1.8
Typ.
2.5
2.0
1
10
Max.
3.6
50
250
22.3
Unit
V
Test Conditions
V
GS
= 0 V, I
D
= 100 μA
V
DS
= V
GS
, I
D
= 23 mA
V
DS
= V
GS
, I
D
= 23 mA, T
J
= 175ºC
V
DS
= 1200 V, V
GS
= 0 V
V
GS
= 15 V, V
DS
= 0 V
V
GS
= 15 V, I
D
= 75 A
V
GS
= 15 V, I
D
= 75 A, T
J
= 175ºC
V
DS
= 20 V, I
DS
= 75 A
V
DS
= 20 V, I
DS
= 75 A, T
J
= 175ºC
V
GS
= 0 V, V
DS
= 1000 V
f = 1 MHz
V
AC
= 25 mV
Note
V
V
μA
nA
mΩ
S
Fig. 11
11.2
16
28.8
53
47
6085
230
13
130
1.1
0.8
2.3
0.6
34
33
65
13
2.6
67
61
211
Fig. 4,
5, 6
Fig. 7
pF
Fig. 17,
18
Fig. 16
μJ
mJ
V
DS
= 800 V, V
GS
= -4 V/+15 V, I
D
= 75 A,
Fig. 26
R
G(ext)
= 2.5Ω, L= 65.7 μH, Tj = 175ºC
V
DS
= 800 V, V
GS
= -4 V/+15 V, I
D
= 75 A,
Fig. 26
R
G(ext)
= 2.5Ω, L= 65.7 μH, Tj = 175ºC
V
DD
= 800 V, V
GS
= -4 V/15 V
R
G(ext)
= 2.5 Ω,
I
D
= 75 A, L= 65.7
Timing relative to V
DS
, Inductive load
f = 1 MHz, V
AC
= 25 mV
V
DS
= 800 V, V
GS
= -4 V/15 V
I
D
= 75 A
Per IEC60747-8-4 pg 21
Fig. 12
mJ
ns
Fig. 27
Ω
nC
2
C3M0016120K Rev. -, 04-2019
Reverse Diode Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
V
SD
I
S
I
S, pulse
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Parameter
Diode Forward Voltage
Continuous Diode Forward Current
Diode pulse Current
Reverse Recover time
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recover time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
4.6
4.2
Max.
Unit
V
V
Test Conditions
V
GS
= -4 V, I
SD
= 37.5 A, T
J
= 25 °C
V
GS
= -4 V, I
SD
= 37.5 A, T
J
= 175 °C
V
GS
= -4 V, T
C
= 25˚C
V
GS
= -4 V, pulse width t
P
limited by T
jmax
V
GS
= -4 V, I
SD
= 75 A, V
R
= 800 V
dif/dt = 4000 A/µs, T
J
= 175 °C
Note
Fig. 8,
9, 10
Note 1
Note 1
112
250
30
1238
64
27
1261
77
A
A
ns
nC
A
ns
nC
A
Note 1
V
GS
= -4 V, I
SD
= 75 A, V
R
= 800 V
dif/dt = 5500 A/µs, T
J
= 175 °C
Note 1
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
Typ.
0.27
40
Unit
°C/W
Test Conditions
Note
Fig. 21
3
C3M0016120K Rev. -, 04-2019
Typical Performance
250
Conditions:
T
J
= -40 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
250
200
Conditions:
T
J
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
Drain-Source Current, I
DS
(A)
200
Drain-Source Current, I
DS
(A)
150
150
V
GS
= 9V
100
V
GS
= 9V
100
50
V
GS
= 7V
50
V
GS
= 7V
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -40 ºC
250
Conditions:
T
J
= 175 °C
tp = < 200 µs
V
GS
= 11V
Figure 2. Output Characteristics T
J
= 25 ºC
2.0
Conditions:
I
DS
= 75 A
V
GS
= 15 V
t
p
< 200 µs
V
GS
= 15V
V
GS
= 13V
1.8
1.6
200
Drain-Source Current, I
DS
(A)
On Resistance, R
DS On
(P.U.)
V
GS
= 9V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
150
100
V
GS
= 7V
50
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
-40
-20
0
20
Drain-Source Voltage, V
DS
(V)
Junction Temperature, T
J
(°C)
40
60
80
100
120
140
160
180
Figure 3. Output Characteristics T
J
= 175 ºC
50
45
40
Conditions:
V
GS
= 15 V
t
p
< 200 µs
T
J
= 175 °C
Figure 4. Normalized On-Resistance vs. Temperature
40
35
Conditions:
I
DS
= 75 A
t
p
< 200 µs
On Resistance, R
DS On
(mOhms)
35
30
25
20
15
10
5
0
0
50
100
On Resistance, R
DS On
(mOhms)
30
25
20
15
10
5
0
V
GS
= 11 V
V
GS
= 13 V
V
GS
= 15 V
T
J
= 25 °C
T
J
= -40 °C
Drain-Source Current, I
DS
(A)
150
200
250
300
-40
-20
0
20
Junction Temperature, T
J
(°C)
40
60
80
100
120
140
160
180
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
4
C3M0016120K Rev. -, 04-2019
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
Typical Performance
250
Conditions:
V
DS
= 20 V
tp < 200 µs
-10
-8
-6
-4
-2
0
0
Drain-Source Current, I
DS
(A)
Drain-Source Current, I
DS
(A)
200
V
GS
= -4 V
V
GS
= 0 V
-50
150
T
J
= 175 °C
T
J
= -40 °C
-100
V
GS
= -2 V
100
T
J
= 25 °C
-150
50
0
0
2
4
6
8
10
12
Conditions:
T
J
= -40°C
t
p
< 200 µs
-200
Gate-Source Voltage, V
GS
(V)
Drain-Source Voltage V
DS
(V)
-250
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-10
-8
-6
-4
-2
0
0
-10
Figure 8. Body Diode Characteristic at -40 ºC
-8
-6
-4
-2
0
0
Drain-Source Current, I
DS
(A)
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
-50
Drain-Source Current, I
DS
(A)
-50
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
-100
-100
-150
-150
Conditions:
T
J
= 25°C
t
p
< 200 µs
-200
Drain-Source Voltage V
DS
(V)
-250
Conditions:
T
J
= 175°C
t
p
< 200 µs
-200
Drain-Source Voltage V
DS
(V)
-250
Figure 9. Body Diode Characteristic at 25 ºC
4.0
3.5
3.0
Conditons
V
GS
= V
DS
I
DS
= 23 mA
Figure 10. Body Diode Characteristic at 175 ºC
16
Conditions:
I
DS
= 20 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
12
2.5
2.0
1.5
1.0
0.5
0.0
Gate-Source Voltage, V
GS
(V)
-40
-20
0
20
40
60
80
100
120
140
160
180
Threshold Voltage, V
th
(V)
8
4
0
-4
Junction Temperature T
J
(°C)
0
50
100
150
200
250
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
5
C3M0016120K Rev. -, 04-2019