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CAS300M12BM2

MOSFET - 阵列 2 个 N 通道(半桥) 1200V(1.2kV) 423A(Tc) 1660W 底座安装 模块

产品类别:分立半导体    晶体管   

制造商:Wolfspeed (Cree)

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CAS300M12BM2概述
Wolfspeed(Cree Inc. 能源动力公司)碳化硅功率 MOSFET 模块。这些 SiC MOSFET 模块采用工业标准封装且提供半桥 (2 MOSFET) 和 3 相 (6 MOSFET) 格式;它们还包括 SiC 反向恢复二极管。 典型应用包括:感应加热、太阳能和风力反相器、直流 - 直流转换器、3 相 PFC、线路再生驱动器、UPS 和 SMPS、电动机驱动器和电池充电器。

MOSFET 断开尾线电流和二极管反向恢复电流为有效零。
超低损耗高频操作
因 SiC 特性而易于并联
常闭,故障安全操作
铜基板和氮化铝绝缘体,可降低热要求
CAS300M12BM2规格参数
参数名称
属性值
类别
分立半导体;晶体管
厂商名称
Wolfspeed (Cree)
系列
Z-FET™
包装
散装
技术
碳化硅(SiC)
配置
2 个 N 通道(半桥)
漏源电压(Vdss)
1200V(1.2kV)
25°C 时电流 - 连续漏极 (Id)
423A(Tc)
不同 Id、Vgs 时导通电阻(最大值)
5.7 毫欧 @ 300A,20V
不同 Id 时 Vgs(th)(最大值)
2.3V @ 15mA(标准)
不同 Vgs 时栅极电荷 (Qg)(最大值)
1025nC @ 20V
不同 Vds 时输入电容 (Ciss)(最大值)
19500pF @ 800V
功率 - 最大值
1660W
工作温度
150°C(TJ)
安装类型
底座安装
封装/外壳
模块,螺丝端子
供应商器件封装
模块
基本产品编号
CAS300
CAS300M12BM2文档预览
CAS300M12BM2
Technical Features
V
DS
I
DS
1200 V
300 A
1200 V, 300 A All-Silicon Carbide
High Performance, Switching Optimized, Half-Bridge Module
Package 61.4 mm X 106.4 mm X 30 mm
Industry Standard 62mm Footprint
Ultra Low Loss , High-Frequency Operation
Zero Reverse Recovery from Diodes
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Copper Baseplate and Aluminum Nitride Insulator
Applications
Induction Heating
Motor Drives
Solar and Wind Inverters
UPS and SMPS
Traction
System Benefits
• 62mm Form Factor Enables System Retrofit
• Increased System Efficiency, due to Low Switching & Conduction Losses of SiC
Maximum Parameters
(Verified By Design)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
Note
V
DS max
V
GS max
V
GS op
I
DS
I
SD
I
F
Drain-Source Voltage
Gate-Source Voltage, Maximum Value
Gate-Source Voltage, Recommended
Op. Value
DC Continuous Drain Current
DC Source-Drain Current
Schottky Diode DC Forward Current
-10
-5
498
345
876
547
1200
+25
+20
V
Transient, <100 ns
Static
Fig. 32
V
GS
= 20 V, T
C
= 25 ˚C, T
VJ
≤ 150 ˚C Fig. 20
V
GS
= 20 V, T
C
= 90 ˚C, T
VJ
≤ 150 ˚C
A
1500
1500
V
GS
= 20 V, T
C
= 25 ˚C, T
VJ
≤ 150 ˚C
V
GS
= - 5 V, T
C
= 25 ˚C, T
VJ
≤ 150 ˚C
V
GS
= 20 V
V
GS
= -5 V
°C
T
C
= 25 ˚C;
t
Pmax
limited by
T
VJmax
I
DS (pulsed)
Maximum Pulsed Drain-Source Current
I
F (pulsed)
Maximum Pulsed Diode Current
T
VJ op
Maximum Virtual Junction
Temperature under Switching
Conditions
-40
150
Rev. 2, 2021-02-08
1
CAS300M12BM2
4600 Silicon Dr., Durham, NC 27703
Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
MOSFET Characteristics (Per Position)
(T
VJ
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Conditions
Note
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance (Devices
Only)
Transconductance
Turn-On Switching Energy, T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 175 °C
Turn-Off Switching Energy, T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 175 °C
Internal Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
FET Thermal Resistance, Junction to Case
1200
2.0
2.9
2.4
600
0.06
4.17
7.20
160
160
3.4
3.0
2.9
3.4
3.4
3.5
3.0
19.5
2.54
113
166
475
1025
0.070
0.075
°C/W
nC
2000
3.6
5.67
4.0
V
μ
A
V
GS
= 0 V, T
VJ
= -40 °C
V
DS
= V
GS
, I
D
= 90 mA
V
DS
= V
GS
, I
D
= 90 mA, T
VJ
= 150 °C
V
GS
= 0 V, V
DS
= 1200 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= 20 V, I
D
= 300 A
V
GS
= 20 V, I
D
= 300 A, T
VJ
= 150 °C
V
DS
= 20 V, I
DS
= 300 A
V
DS
= 20 V, I
DS
= 300 A, T
VJ
= 150 °C
V
DS
= 600 V,
I
D
= 300 A,
V
GS
= -5 V/+20 V,
R
G(ext)
= 0.0 Ω,
L= 22.2
μ
H
Fig. 2
Fig. 3
Fig. 4
mΩ
g
fs
S
E
On
mJ
Fig. 11
Fig. 13
E
Off
R
G(int)
C
iss
C
oss
C
rss
Q
GS
Q
GD
Q
G
R
th JC
nF
pF
V
AC
= 25 mV, f = 100 kHz
V
GS
= 0 V, V
DS
= 800 V,
V
AC
= 25 mV, f = 100 kHz
V
DS
= 800 V, V
GS
= -5 V/+20 V
I
D
= 300 A
Per IEC60747-8-4 pg 21
Fig. 17
Fig. 9
Rev. 2, 2021-02-08
2
CAS300M12BM2
4600 Silicon Dr., Durham, NC 27703
Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
Diode Characteristics (Per Position)
(T
VJ
= 25˚C unless otherwise specified)
Symbol Parameter
Min.
Typ.
Max.
Unit
Test Conditions
Note
V
F
t
rr
Q
RR
I
RRM
E
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Diode Energy T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 150 °C
Diode Thermal Resistance, Junction to
Case
1.6
2.1
27
4.9
-310
2.04
2.17
2.18
0.073
0.076
V
μ
C
V
GS
= -5 V, I
F
= 300 A
V
GS
= -5 V, I
F
= 300 A, T
VJ
= 150 °C
V
GS
= -5 V, I
SD
= 300 A, V
R
= 600 V
di
F
/dt = 22 A/ns, T
VJ
= 150 °C
V
DS
= 600 V, I
D
= 300A,
V
GS
= -5 V/20 V, R
G(ext)
= 0.0 Ω,
L= 22.2
μ
H
Fig. 7
ns
A
Fig. 31
mJ
Fig. 14
Note 1
R
th JC
°C/W
Fig. 18
Note 1 SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energy.
Module Physical Characteristics
Symbol Parameter
Min.
Typ.
Max.
Unit
Test Conditions
R
1-3
R
1-2
L
Stray
T
C
W
M
S
V
isol
Package Resistance, M1
Package Resistance, M2
Stray Inductance
Case Temperature
Weight
Mounting Torque
Case Isolation Voltage
Clearance Distance
Creepage Distance
4
4
5
9
30
30
40
-40
0.60
0.51
11.1
125
300
5
5
5.5
5.5
mΩ
nH
°C
g
N-m
kV
T
C
= 125 °C, Note 2
T
C
= 125 °C, Note 2
Between Terminals 3 and 2
Baseplate, M6-1.0 bolts
Power Terminals, M6-1.0 bolts
AC, 50 Hz, 1 min
Terminal to Terminal
Terminal to Baseplate
Terminal to Terminal
Terminal to Baseplate
mm
Note 2 Total Effective Resistance (Per Switch Position) = MOSFET R
DS(on)
+ Switch Position Package Resistance.
Rev. 2, 2021-02-08
3
CAS300M12BM2
4600 Silicon Dr., Durham, NC 27703
Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
Typical Performance
600
Drain-Source Current, I
DS
(A)
500
400
300
200
100
0
0
Normalized On-resistance (p.u.)
tp < 300
μs
V
GS
= 20 V
2.0
1.8
1.6
tp < 300
μs
V
GS
= 20 V
150 °C
125 °C
-40°C
25 °C
1.4
1.2
1.0
0.8
100 °C
100 °C
125 °C
150 °C
25 °C
0 °C
-40 °C
0
100
200
300
400
500
600
1
2
3
4
5
6
7
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics for Various Junction
Temperatures
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100
125
150
0
0
2
Drain-Source Current, I
DS
(A)
Figure 2. Normalized On-State Resistance vs. Drain Current for Various
Junction Temperatures
600
tp < 300
μs
V
DS
= 20 V
Normalized On-resistance (p.u.)
Drain-Source Current, I
DS
(A)
tp < 300
μs
V
GS
= 20 V
I
D
= 300 A
500
400
300
200
100
150 °C
125 °C
100 °C
25 °C
0 °C
-25 °C
-40 °C
4
6
8
10
12
14
Virtual Junction Temperature, T
VJ
(°C)
Figure 3. Normalized On-State Resistance vs.
Junction Temperature
600
tp < 300
μs
V
GS
= 20 V
600
Gate-Source Voltage, V
GS
(V)
Figure 4. Transfer Characteristic for Various Junction
Temperatures
tp < 300
μs
V
GS
= 0 V
Source-Drain Current, I
SD
(A)
400
300
200
100
0
0
0.5
-40 °C
25 °C
Source-Drain Current, I
SD
(A)
500
500
400
300
200
100
0
-40 °C
0 °C
25 °C
100 °C
125 °C
150 °C
100 °C
125 °C
150 °C
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
Source-Drain Voltage, V
SD
(V)
Figure 5. 3
rd
Quadrant Characteristic vs. Junction Temperatures at
V
GS
= 20 V
Rev. 2, 2021-02-08
4
CAS300M12BM2
4600 Silicon Dr., Durham, NC 27703
Source-Drain Voltage, V
SD
(V)
Figure 6. 3
rd
Quadrant Characteristic vs. Junction Temperatures at
V
GS
= 0V (Diode)
Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
Typical Performance
600
tp < 300
μs
V
GS
= -5 V
-40 °C
0 °C
25 °C
1,000.00
Source-Drain Current, I
SD
(A)
500
400
300
200
100
0
0
100.00
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
iss
Capacitance (nF)
10.00
C
oss
1.00
C
rss
100 °C
125 °C
150 °C
0.10
0.5
1
1.5
2
2.5
3
3.5
4
0.01
0
50
100
150
200
Source-Drain Voltage, V
SD
(V)
Figure 7. 3
rd
Quadrant Characteristic vs. Junction Temperatures at
V
GS
= - 5 V (Diode)
1,000.00
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
iss
10.00
C
oss
1.00
C
rss
3.5
3.0
Drain-Source Voltage, V
DS
(V)
Figure 8. Typical Capacitances vs. Drain to Source Voltage
(0 - 200V)
Conditions:
V
DS
= V
GS
I
DS
= 90 mA
0.10
0.01
0
200
400
600
800
1,000
1,200
Threshold Voltage, V
th
(V)
100.00
Capacitance (nF)
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
Drain-Source Voltage, V
DS
(V)
Figure 9. Typical Capacitances vs. Drain to Source Voltage
(0 - 1200V)
18
16
Conditions:
T
VJ
= 25°C
V
DD
= 600 V
R
G(ext)
= 0.0 Ω
V
GS
= -5/+20 V
L = 22.2 µH
Virtual Junction Temperature, T
VJ
(°C)
Figure 10. Threshold Voltage vs. Junction Temperature
25
E
Off
+ E
On
12
10
8
6
4
2
0
0
Switching Energy (mJ)
Switching Energy (mJ)
14
20
E
Off
15
Conditions:
T
VJ
= 25°C
V
DD
= 800 V
R
G(ext)
= 0.0 Ω
V
GS
= -5/+20 V
L = 22.2 µH
E
Off
+ E
On
E
Off
E
On
10
E
On
E
RR
5
E
RR
100
200
300
400
500
600
700
0
0
100
200
300
400
500
600
700
Source Current, I
S
(A)
Figure 11. Switching Energy vs. Drain Current
(V
DS
= 600 V)
Rev. 2, 2021-02-08
5
CAS300M12BM2
4600 Silicon Dr., Durham, NC 27703
Source Current, I
S
(A)
Figure 12. Switching Energy vs. Drain Current
(V
DS
= 800 V)
Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
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