型号
- 型号
- 关键词
Small Signal Field-Effect Transistor, 3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-2, 3 PIN
厂商名称：NEC(日电)
下载文档| 型号 | 2SJ357-T1-AZ | 2SJ357-T2-AZ |
|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-2, 3 PIN | Small Signal Field-Effect Transistor, 3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-2, 3 PIN |
| 厂商名称 | NEC(日电) | NEC(日电) |
| 包装说明 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| 针数 | 3 | 3 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 外壳连接 | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 30 V | 30 V |
| 最大漏极电流 (ID) | 3 A | 3 A |
| 最大漏源导通电阻 | 0.35 Ω | 0.35 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-F3 | R-PSSO-F3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子形式 | FLAT | FLAT |
| 端子位置 | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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