型号
- 型号
- 关键词
Power Field-Effect Transistor, 6A I(D), 40V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN PACKAGE-3
厂商名称：American Power Devices Inc
器件标准：
| 型号 | APM4030NUC-TRG | APM4030NUC-TRL |
|---|---|---|
| 描述 | Power Field-Effect Transistor, 6A I(D), 40V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN PACKAGE-3 | Power Field-Effect Transistor, 6A I(D), 40V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 |
| 是否无铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 |
| 零件包装代码 | TO-252 | TO-252 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 4 |
| Reach Compliance Code | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 40 V | 40 V |
| 最大漏极电流 (ID) | 6 A | 6 A |
| 最大漏源导通电阻 | 0.025 Ω | 0.025 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252 | TO-252 |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e3 | e3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 24 A | 24 A |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子面层 | Matte Tin (Sn) | Matte Tin (Sn) |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 40 | 40 |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |