型号
- 型号
- 关键词
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
厂商名称：SK Hynix(海力士)
厂商官网：http://www.hynix.com/eng/
器件标准：
| 型号 | HY5S5B6ELFP-HE | HY5S5B6ELF-HE | HY5S5B6ELF-SE | HY5S5B6ELFP-SE |
|---|---|---|---|---|
| 描述 | 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O | 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O | 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O | 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O |
| 是否Rohs认证 | 符合 | 不符合 | 不符合 | 符合 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 零件包装代码 | BGA | BGA | BGA | BGA |
| 包装说明 | VFBGA, BGA54,9X9,32 | VFBGA, BGA54,9X9,32 | VFBGA, BGA54,9X9,32 | VFBGA, BGA54,9X9,32 |
| 针数 | 54 | 54 | 54 | 54 |
| Reach Compliance Code | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 6.5 ns | 6.5 ns | 7 ns | 7 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 133 MHz | 133 MHz | 105 MHz | 105 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON |
| 交错的突发长度 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 | 1,2,4,8 |
| JESD-30 代码 | R-PBGA-B54 | R-PBGA-B54 | R-PBGA-B54 | R-PBGA-B54 |
| JESD-609代码 | e1 | e0 | e0 | e1 |
| 长度 | 12 mm | 12 mm | 12 mm | 12 mm |
| 内存密度 | 268435456 bi | 268435456 bi | 268435456 bi | 268435456 bi |
| 内存集成电路类型 | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM | SYNCHRONOUS DRAM |
| 内存宽度 | 16 | 16 | 16 | 16 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 54 | 54 | 54 | 54 |
| 字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
| 字数代码 | 16000000 | 16000000 | 16000000 | 16000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -25 °C | -25 °C | -25 °C | -25 °C |
| 组织 | 16MX16 | 16MX16 | 16MX16 | 16MX16 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | VFBGA | VFBGA | VFBGA | VFBGA |
| 封装等效代码 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 | BGA54,9X9,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 | NOT SPECIFIED | NOT SPECIFIED | 260 |
| 电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | 8192 | 8192 | 8192 |
| 座面最大高度 | 1 mm | 1 mm | 1 mm | 1 mm |
| 自我刷新 | YES | YES | YES | YES |
| 连续突发长度 | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP | 1,2,4,8,FP |
| 最大待机电流 | 0.00035 A | 0.00035 A | 0.00035 A | 0.00035 A |
| 最大压摆率 | 0.1 mA | 0.1 mA | 0.075 mA | 0.075 mA |
| 最大供电电压 (Vsup) | 1.95 V | 1.95 V | 1.95 V | 1.95 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | OTHER | OTHER | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Silver/Copper (Sn/Ag/Cu) |
| 端子形式 | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 | NOT SPECIFIED | NOT SPECIFIED | 20 |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm |