在zone6区域外扩一个521kx16RAM,改写程序如下,请教有无问题,flash与ram编写有什么不同?外扩ram有一部分用于程序,一部分用于存储数据该如何编写
MEMORY
{
PAGE 0 :
BEGIN : origin = 0x100000, length = 0x000002
PRAMH0 : origin = 0x3F8000, length = 0x001000
PAGE 1 :
/* SARAM */
RAMM0 : origin = 0x000000, length = 0x000400
RAMM1 : origin = 0x000400, length = 0x000400
/* SARAM */
ZONE6 : origin = 0x10002, length = 0x07FFFFE
.......
}
SECTIONS
{
/* Allocate program areas: */
codestart : > BEGIN, PAGE = 0
.reset : > PRAMH0, PAGE = 0 ,TYPE=DSECT
.text : > PRAMH0, PAGE = 0
.cinit : > PRAMH0, PAGE = 0
.pinit : > PRAMH0, PAGE = 0
.switch : > PRAMH0, PAGE = 0
/* Allocate data areas: */
.stack : > RAMM1, PAGE = 1
.bss : > ZONE6, PAGE = 1
.ebss : > ZONE6, PAGE = 1
.const : > ZONE6, PAGE = 1
.econst : > ZONE6, PAGE = 1
.sysmem : > ZONE6, PAGE = 1
.esysmem : > ZONE6, PAGE = 1
......
}
[ 本帖最后由 wj1478 于 2010-4-1 15:31 编辑 ]