e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 1.05pF C(T), 60V, Gallium Arsenide, Abrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 1.05pF C(T), 60V, Gallium Arsenide, Abrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 1.32pF C(T), 60V, Gallium Arsenide, Abrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 1.32pF C(T), 60V, Gallium Arsenide, Abrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 0.5pF C(T), 15V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 0.5pF C(T), 15V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 3.05pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 3.05pF C(T), 15V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 4.12pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 4.12pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 2.8pF C(T), 22V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 2.8pF C(T), 22V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 9.42pF C(T), 22V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 9.42pF C(T), 22V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 0.8pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 0.8pF C(T), 15V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 5.8pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 5.8pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 6.7pF C(T), 15V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 6.7pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 6.9pF C(T), 15V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 6.9pF C(T), 15V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 0.62pF C(T), 22V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 0.62pF C(T), 22V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 2.12pF C(T), 22V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 2.12pF C(T), 22V, Gallium Arsenide, Hyperabrupt

Thales Group

Variable Capacitance Diode, Very High Frequency to KA Band, 2pF C(T), 22V, Gallium Arsenide, Hyperabrupt

e2v technologies

Variable Capacitance Diode, Very High Frequency to KA Band, 2pF C(T), 22V, Gallium Arsenide, Hyperabrupt

Advanced Semiconductor, Inc.

Variable Capacitance Diode, L Band, 4.8pF C(T), Silicon, Hyperabrupt, SOT-23, 3 PIN

Advanced Semiconductor, Inc.

Variable Capacitance Diode, 22pF C(T), Silicon, Hyperabrupt, SOT-23, 3 PIN