2ED2182 (4) S06F (J)
2ED2182 (4) S06F (J)
650 V half-bridge gate driver with integrated bootstrap diode
Features
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Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology
Negative VS transient immunity of 100 V
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
Logic Operational up to
–11
V on VS Pin
Negative Voltage Tolerance on Inputs of
–5
V
Independent under voltage lockout for both channels
Schmitt trigger inputs with hysteresis
3.3 V, 5 V and 15 V input logic compatible
Maximum supply voltage of 25 V
Dual package options of DSO-8 and DSO-14
High and Low Voltage Pins Separated for Maximum Creepage and
Clearance (2ED21824S06J version)
Separate logic and power ground with the 2ED21824S06J version
Interlocking function with internal 400 ns dead time and
programmable up to 5 us with external resistor (2ED21824S06J only)
RoHS compliant
Product summary
V
S_OFFSET
= 650 V max
I
o+pk
/ I
o- pk
(typ.) =+ 2.5 A/ - 2.5 A
V
CC
= 10 V to 20 V
Delay matching = 35 ns max.
Deadtime (typ.) = 400 ns
t
ON
/ t
OFF
(typ.) = 200 ns/ 200 ns
Packages
DSO-8
DSO-14
Potential
applications
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications.
Typical Infineon recommendations are as below:
•
Motor drives, general purpose inverters having TRENCHSTOP™
IGBT6 or 600 V
EasyPACK™ modules
•
Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or
TRENCHSTOP™
family
IGBTs or their equivalent power stages
•
Battery operated small home appliances such as power tools, vaccum cleaners using
low voltage OptiMOS™
MOSFETs or their equivalent power stages
•
Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having
high voltage CoolMOS™ super junction MOSFETs or
TRENCHSTOP™
H3 and WR5 IGBT series or their equivalent
•
High power LED and HID lighting having
CoolMOS™ super junction
MOSFETs
•
Electric vehicle (EV) charging stations and battery management systems
•
Driving 650 V SiC MOSFETs in above applications
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Ordering information
Base part number
2ED2182S06F
2ED21824S06J
Datasheet
www.infineon.com/soi
Package type
DSO-8
DSO -14
Standard pack
Form
Tape and Reel
Tape and Reel
Quantity
2500
2500
Orderable part number
2ED2182S06FXUMA1
2ED21824S06JXUMA1
V 2.31
2021-10-11
Please read the Important Notice and Warnings at the end of this document
Page 1 of 26
2ED2182 (4) S06F (J)
650 V half-bridge gate driver with integrated bootstrap diode
Description
The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with
independent high and low side referenced output channels. Based on
Infineon’s
SOI-technology there is an
excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of
up to - 11 V
DC
on VS pin (
V
CC
= 15 V) on transient voltages. There are not any parasitic thyristor structures present
in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive
an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.
Up to 650V
Up to 650V
2ED21824S06J
2ED2182S06F
HIN
LIN
1
HIN
8
1
2
3
R
DT
HIN
14
HIN
LIN
V
B
HO
V
S
VCC
LIN
VSS
LIN
VSS
V
B
HO
V
S
13
12
11
10
2
3
4
7
6
VCC
5
COM
LO
4
DT
COM
LO
VCC
TO LOAD
TO LOAD
5
6
9
8
VCC
7
*Bootstrap diode is monolithically integrated
This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout.
Figure 1
Typical application block diagram
Summary of feature comparison of the 2ED218x family
Table 1
Part No.
2ED2181S06F
2ED21814S06J
2ED2182S06F
2ED21824S06J
2ED2183S06F
2ED21834S06J
2ED2184S06F
2ED21844S06J
Package
DSO
–
8
DSO
–
14
DSO
–
8
DSO
–
14
DSO
–
8
DSO
–
14
DSO
–
8
DSO
–
14
Drive current
source / sink
+ 2.5 A / - 2.5 A
Input
logic
Cross
conduction
Deadtime
prevention
logic
No
None
Internal 400 ns
Yes
Programmable
400 ns - 5000 ns
Internal 400 ns
Yes
Programmable
400 ns - 5000 ns
Internal 400 ns
Yes
Programmable
400 ns - 5000 ns
Ground
t
ON
/ t
OFF
pins
COM
VSS /
COM
COM
VSS /
COM
COM
VSS /
COM
COM
VSS /
COM
600 ns /
200 ns
200 ns /
200 ns
HIN,
+ 2.5 A / - 2.5 A
LIN
+ 2.5 A / - 2.5 A
HIN,
+ 2.5 A / - 2.5 A
LIN
+ 2.5 A / - 2.5 A
HIN,
+ 2.5 A / - 2.5 A
LIN
+ 2.5 A / - 2.5 A
+ 2.5 A / - 2.5 A IN,
SD
Datasheet
www.infineon.com/soi
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2ED2182 (4) S06F (J)
650 V Half-Bridge gate driver with integrated bootstrap diode
1
Table of contents
Product summary ........................................................................................................................................................ 1
Product validation ....................................................................................................................................................... 1
Description………………………………………………………………………………………………………………….2
Summary of feature comparison of the 2ED218x family ............................................................................................ 2
1
2
3
3.1
3.2
4
4.1
4.2
4.3
4.4
Table of contents ................................................................................................................... 3
Block diagram........................................................................................................................ 4
Pin configuration and functionality .......................................................................................... 5
Pin configuration ..................................................................................................................................... 5
Pin functionality ...................................................................................................................................... 5
Electrical parameters ............................................................................................................. 6
Absolute maximum ratings ..................................................................................................................... 6
Recommended operating conditions..................................................................................................... 6
Static electrical characteristics ............................................................................................................... 7
Dynamic electrical characteristics .......................................................................................................... 8
5
Application information and additional details .......................................................................... 9
5.1
IGBT / MOSFET gate drive ....................................................................................................................... 9
5.2
Switching and timing relationships ........................................................................................................ 9
5.3
Deadtime and matched propagation delays ....................................................................................... 10
5.4
Input logic compatibility ....................................................................................................................... 12
5.5
Undervoltage lockout ........................................................................................................................... 12
5.6
Bootstrap diode..................................................................................................................................... 13
5.7
Calculating the bootstrap capacitance C
BS
.......................................................................................... 13
5.8
Tolerant to negative tranisents on input pins ...................................................................................... 15
5.9
Negative voltage transient tolerance of VS pin .................................................................................... 15
5.10
NTSOA
–
Negative Transient Safe Operating Area ............................................................................... 17
5.11
Higher headroom for input to output signal transmission with logic operation upto -11 V .............. 18
5.12
Maximum switching frequency ............................................................................................................. 18
5.13
PCB layout tips ...................................................................................................................................... 19
6
7
8
9
Qualification information....................................................................................................... 21
Related products................................................................................................................... 21
Package details ..................................................................................................................... 22
Part marking information ...................................................................................................... 23
10
Additional documentation and resources................................................................................. 24
10.1
Infineon online forum resources .......................................................................................................... 24
11
Revision history .................................................................................................................... 25
Datasheet
www.infineon.com/soi
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2ED2182 (4) S06F (J)
650 V half-bridge gate driver with integrated bootstrap diode
2
Block diagram
8
UV
DETECT
R
Pulse
Filter
VB
2ED2182S06F
R
S
Q
7
HO
6
VS
HIN
1
Pulse
Generator
BS diode
DT
Deadtime
VCC UV
DETECT
VCC
5
VCC
LIN
2
Delay
Match
VSS/COM
LEVEL
SHIFT
4
LO
3
COM
13
VB
2ED21824S06J
Pulse
Filter
UV
DETECT
R
R
Q
12
HO
S
11
VS
HIN
1
Pulse
Generator
BS diode
DT
4
DT
Deadtime
VCC UV
DETECT
VCC
7
VCC
LIN
2
Delay
Match
VSS/COM
LEVEL
SHIFT
6
LO
5
COM
VSS
3
Figure 2
Block diagrams
Datasheet
www.infineon.com/soi
4 of 26
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2ED2182 (4) S06F (J)
650 V half-bridge gate driver with integrated bootstrap diode
3
3.1
Pin configuration and functionality
Pin configuration
1
HIN
LIN
VSS
DT
COM
LO
VCC
14-Lead DSO-14 (150 mil)
2ED21824S06J
14
1
2
3
4
HIN
LIN
COM
LO
V
B
HO
V
S
VCC
8
7
6
5
2
3
4
5
6
7
V
B
HO
13
12
11
10
9
8
V
S
8-Lead DSO-8 (150 mil)
2ED2182S06F
Figure 3
2ED2182(4)S06F(J) pin assignments (top view)
3.2
Table 2
Pin functionality
Symbol
Description
HIN
LIN
VSS
DT
COM
LO
VCC
VS
HO
VB
Logic input for high side gate driver output (HO), in phase with HO
Logic input for low side gate driver output (LO), in phase with LO
Logic ground ( 2ED21824S06J only)
Programmable dead-time, referenced to VSS.( 2ED21824S06J only)
Low-side gate drive return
Low-side driver output
Low-side and logic supply voltage
High voltage floating supply return
High-side driver output
High-side gate drive floating supply
Datasheet
www.infineon.com/soi
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