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MCP6C02T-020E/CHY

电流感应放大器, SOT-23封装, 表面安装器件, 单电源

产品类别:半导体    放大器 IC   

制造商:Microchip(微芯科技)

官网地址:https://www.microchip.com

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MCP6C02T-020E/CHY概述
MCP6C02 高侧电流感应放大器为超低偏置和偏置漂移提供输入偏置电压校正。此设备提供 20 、 50 和 100 v 的预设增益输入共模范围从 3V 扩展至 65V 、电源工作电压为 2V 至 5.5 伏。

零偏移体系结构
双向或单向操作
μV 偏移小于 16 μ m
最大偏置漂移小于 85 nv/°c
指定输入共模范围: 3V 至 65V
带宽为 500 khz (典型)
增强 EMI 抑制
指定温度范围为 -40 至 +125°c ( st-23 封装)
指定温度范围 -40 至 +150°c ( vmm 直径封装)
小尺寸 6 引脚型、采用了 9 引脚、 3x3 vmm 和 8 引脚型封装
1 级: 6 引脚数型高级型
0 级: 8 引脚 vmm 封装
MCP6C02T-020E/CHY规格参数
参数名称
属性值
类别
半导体;放大器 IC
厂商名称
Microchip(微芯科技)
系列
Zero-Drift
包装
卷带(TR)剪切带(CT)
放大器类型
电流检测
电路数
1
增益带宽积
500 kHz
电流 - 输入偏置
170 µA
电压 - 输入补偿
1.9 µV
电流 - 供电
490µA
电压 - 跨度(最小值)
2 V
电压 - 跨度(最大值)
5.5 V
工作温度
-40°C ~ 125°C
安装类型
表面贴装型
封装/外壳
SOT-23-6
供应商器件封装
SOT-23-6
基本产品编号
MCP6C02
MCP6C02T-020E/CHY文档预览
MCP6C02
Zero-Drift, 65V High-Side Current Sense Amplifier
Features
• Single Amplifier: MCP6C02
• Bidirectional or Unidirectional
• Input (Common-mode) Voltages:
- +3.0V to +65V, specified
- +2.8V to +68V, operating
- -0.3V to +70V, survival
• Power Supply:
- 2.0V to 5.5V
- Single or Dual (Split) Supplies
• High DC Precision:
- V
OS
: ±1.65
μV
(typical)
- CMRR: 154 dB (typical)
- PSRR: 138 dB (typical)
- Gain Error: ±0.1% (typical)
• Preset Gains: 20, 50 and 100 V/V
• POR Protection:
- HV POR for V
IP
– V
SS
- LV POR for V
DD
– V
SS
• Bandwidth: 500 kHz (typical)
• Supply Currents:
- I
DD
: 490
μA
(typical)
- I
BP
: 170
μA
(typical)
• Enhanced EMI Protection:
- EMIRR: 118 dB at 2.4 GHz (typical)
• Specified Temperature Ranges:
- -40°C to +125°C (E-Temp part)
- -40°C to +150°C (H-Temp part)
General Description
The Microchip Technology Inc. MCP6C02 high-side
current sense amplifier is offered with preset gains of
20, 50 and 100 V/V. The Common-mode input range
(V
IP
) is +3V to +65V. The Differential-mode input range
(V
DM
= V
IP
– V
IM
)
supports
unidirectional
and
bidirectional applications.
The power supply can be set between 2.0V and 5.5V.
Parts in the SOT-23 package are specified over -40°C
to +125°C (E-Temp), while parts in the 3×3 VDFN
package are specified over -40°C to +150°C (H-Temp).
The Zero-Drift architecture supports very low input
errors, which allow a design to use shunt resistors of
lower value (and lower power dissipation).
Package Types (Top View)
MCP6C02
SOT-23
V
OUT
1
V
SS
2
V
IP
3
6 V
DD
5 V
REF
4 V
IM
MCP6C02
3×3 VDFN *
V
IP
1
V
SS
2
NC 3
NC 4
EP
9
8 V
IM
7 V
REF
6 V
DD
5 V
OUT
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
Typical Application Circuit
+5V
2.2 µF
10 nF
100 nF
V
BAT
+36V
R
SH
2.2 mΩ
I
L
< 20A
V
L
U
1
MCP6C02-100
V
OUT
20 kΩ
Typical Applications
• Automotive (see
Product Identification System)
- AEC-Q100 Qualified, Grade 0
(VDFN package)
- AEC-Q100 Qualified, Grade 1
(SOT-23 package)
• Motor Control
• Analog Level Shifter
• Industrial Computing
• Battery Monitor/Tester
Related Products
• MCP6C04-020
• MCP6C04-050
• MCP6C04-100
2018-2021 Microchip Technology Inc.
DS20006129C-page 1
MCP6C02
Functional Diagram
V
DD
V
IP
V
IM
G
M1
I
1
I
2
G
M2
V
SS
R
M3
V
FG
V
OUT
R
F
R
G
V
REF
Gain Options
Table 1
shows key specifications that differentiate
between the three different differential gain (G
DM
)
options. See
Section 1.0 “Electrical Characteris-
tics”, Section 6.0 “Packaging Information”
and the
Product Identification System
for further information
on the GDM options available.
TABLE 1:
Part No.
KEY DIFFERENTIATING SPECIFICATIONS
G
DM
(V/V)
Nom.
20
50
100
V
OS
μV)
Max.
16
14
12
TC
1
(± nV/°C)
Max.
90
70
65
CMRR
(dB)
Min.
132
138
PSRR
(dB)
Min.
109
115
116
V
DMH
(V)
Min.
0.265
0.106
0.053
390
BW
(kHz)
Typ.
500
E
ni
(μV
p-p
)
Typ.
1.54
0.95
0.92
e
ni
(nV/
√Hz)
Typ.
74
46
44
MCP6C02-020
MCP6C02-050
MCP6C02-100
Note 1:
2:
3:
4:
V
OS
and TC
1
limits are by design and characterization only.
TC
1
covers the Extended Temperature Range (-40°C to +125°C) and the High Temperature Range (-40°C
to +150°C).
CMRR is at V
DD
= 5.5V.
E
ni
is at f = 0.1 Hz to 10 Hz. e
ni
is at f < 500 Hz.
DS20006129C-page 2
2018-2021 Microchip Technology Inc.
MCP6C02
Figure 1, Figure 2
and
Figure 3
show input offset
voltage versus temperature for the three gain options
(G
DM
= 20, 50 and 100 V/V).
8
Input Offset Voltage; V
OS
(μV)
6
The MCP6C02's CMRR supports applications in noisy
environments.
Figure 4
shows how CMRR is high,
even for frequencies near 100 kHz.
100
90
CMRR (dB)
80
70
4
2
0
-2
-4
-6
-8
-50
-25
0
25
50
75
100
Ambient Temperature; T
A
(°C)
125
150
G
DM
= 20
V
DD
= 5.5V
28 Samples
60
50
40
10k
1.E+04
G
DM
= 100
G
DM
= 50
G
DM
= 20
100k
1.E+05
Frequency; f (Hz)
1M
1.E+06
FIGURE 1:
Input Offset Voltage vs.
Temperature, G
DM
= 20 V/V.
8
FIGURE 4:
CMRR vs. Frequency.
Input Offset Voltage; V
OS
(μV)
6
4
2
0
-2
-4
-6
-8
G
DM
= 50
V
DD
= 5.5V
28 Samples
-50
-25
0
25
50
75
100
Ambient Temperature; T
A
(°C)
125
150
FIGURE 2:
Input Offset Voltage vs.
Temperature, G
DM
= 50 V/V.
8
Input Offset Voltage; V
OS
(μV)
6
4
2
0
-2
-4
G
DM
= 100
V
DD
= 5.5V
27 Samples
-6
-8
-50
-25
0
25
50
75
100
Ambient Temperature; T
A
(°C)
125
150
FIGURE 3:
Input Offset Voltage vs.
Temperature, G
DM
= 100 V/V.
2018-2021 Microchip Technology Inc.
DS20006129C-page 3
MCP6C02
NOTES:
DS20006129C-page 4
2018-2021 Microchip Technology Inc.
MCP6C02
1.0
1.1
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
V
DD
– V
SS
.................................................................................................................................................. -0.3V to +5.5V
Current at Input Pins (Note
1)
.................................................................................................................................±2 mA
Analog Inputs (V
IP
and V
IM
) (Note
1)
.......................................................................................................... -0.3V to +70V
All Other Inputs and Outputs.....................................................................................................V
SS
– 0.3V to V
DD
+ 0.3V
Input Difference Voltage (V
DM
) (Note
1)
.................................................................................................................. ±1.2V
Output Short-Circuit Current ........................................................................................................................... Continuous
Current at Output and Supply Pins ....................................................................................................................... ±30 mA
Storage Temperature .............................................................................................................................. -65°C to +150°C
Maximum Junction Temperature (Note
2)
............................................................................................................. +155°C
ESD protection (HBM, CDM, MM) .......................................................................................................
2 kV, 2 kV, 300V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1:
These voltage and current ratings are physically independent; each required condition must be enforced by
the user (see
Section 5.1.2 “Input Voltage Limits”
and
Section 5.1.3 “Input Current Limits”).
2:
The Absolute Maximum Junction Temperature is not intended for continuous use.
1.2
Voltage and Temperature Ranges
VOLTAGE AND TEMPERATURE RANGES
Units
V
G
DM
(V/V)
All
Comment
V
DD
(LV POR on)
LV POR
Hysteresis
Typ.
Max.
Min.
Range
Type
Min.
Sym.
V
DDL
V
PLH
V
PLH
V
DDH
V
IPL
V
IPLD
V
IPLH
Typ.
Max.
V
IPH
Spec.
2.0
0.1 Typ.
2.0 to 5.5
5.5
3.0
2.8
0.2 Typ.
34
65
Oper.
1.7
5.5
2.8
2.6
0.2 Typ.
68
70
Abs. Min./Max.
-0.3
5.5
-0.3
The various voltage and temperature ranges are listed in
Table 1-1.
TABLE 1-1:
Parameter
V
DD
(Note
2)
V
IP
(Note
2)
V
All
V
IP
(HV POR on)
V
IP
(HV POR on)
HV POR
Hysteresis
Note 1:
2:
3:
4:
5:
All of this table’s limits are set by design and characterization.
The HV POR is triggered by V
IP
, with hysteresis. The LV POR is triggered by V
DD
, with hysteresis.
V
DM
= V
IP
– V
IM
. V
IM
is in its range when both V
IP
and V
DM
are in their ranges.
Allowing the ambient temperature (T
A
) to exceed the Maximum Ambient Temperature limit (T
AH
) may
cause parameters to exceed their specified limits. See
Section 1.1 “Absolute Maximum Ratings †”
for
the Absolute Maximum Junction Temperature and Storage Temperature limits.
V
OL
and V
OH
are at R
L
= 1 k
2018-2021 Microchip Technology Inc.
DS20006129C-page 5
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