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MCP6D11-E/MG

差分 放大器 1 电路 满摆幅 16-QFN(3x3)

产品类别:半导体    放大器 IC   

制造商:Microchip(微芯科技)

官网地址:https://www.microchip.com

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MCP6D11-E/MG概述
MCP6D11 是一款低噪声、低失真差分放大器、经优化可用于驱动高性能、高速的像 MCP331x1D 系列这样的模数转换器。除了低噪声和低失真之外、 MCP6D11 在 2.5v 电源上仅消耗 3.5 mw 静态功率。μW 功率敏感型应用、断电引脚可将功耗降低至 13 μ a 以下

低功率
iq 典型值仅为 1.4 毫安
• 工作电压范围:2.5V 至 5.5V
高速
增益带宽产品:90 MHz
转换速率:25 V/μs
快速稳定: 200 ns 至 0.01%
易于使用
低偏置:最大 150 uv
轨对轨输出
输入共模范围包括负轨
断电功能
小型封装: 8 引脚 msop 、 16 引脚 3x3 封装
扩展温度: -40 至 125C
MCP6D11-E/MG规格参数
参数名称
属性值
类别
半导体;放大器 IC
厂商名称
Microchip(微芯科技)
包装
管件
放大器类型
差分
电路数
1
输出类型
满摆幅
压摆率
25V/µs
增益带宽积
90 MHz
电流 - 供电
1.4mA
电压 - 供电,单/双 (±)
2.5V ~ 5.5V
工作温度
-40°C ~ 125°C
安装类型
表面贴装型
封装/外壳
16-VFQFN 裸露焊盘
供应商器件封装
16-QFN(3x3)
基本产品编号
MCP6D11
MCP6D11-E/MG文档预览
MCP6D11
Low-Noise, Precision, 90 MHz Differential I/O Amplifier
Features
• Low Power
- I
Q
: 1.4 mA
- Supply Voltage Range: 2.5V to 5.5V
• Gain-Bandwidth Product: 90 MHz
• Slew Rate: 25V/µs
• Low Noise: 5.0 nV/√Hz, f = 10 kHz
• Low Distortion (2V
p-p
, 10 kHz):
- HD2: -138 dBc
- HD3: -137 dBc
• Fast Settling: 200 ns to 0.01%
• Low Offset: 150 µV Max.
• Power-Down Function
• Input Vcm-Range Includes Negative Rail
• Rail-to-Rail Output
• Small Packages: MSOP-8, 3 x 3 mm QFN-16
• Extended Temperature Range: -40°C to +125°C
General Description
The MCP6D11 from Microchip Technology is a low-
noise, low-distortion Differential I/O Amplifier optimized
for driving high-performance 14-, and 16-Bit SAR
ADCs, such as the MCP331x1D ADC family. Featuring
a low 5.0 nV/√Hz input-referred voltage noise and dis-
tortion of less than -116 dBc with an input signal of up
to 100 kHz (2Vpp), the MCP6D11 consumes only
3.5 mW of quiescent power on a 2.5V supply. For
power sensitive applications, a Power-Down function
reduces the power consumption to less than 13 µW.
Through its V
OCM
pin, the MCP6D11 allows easy
control of its output common-mode voltage, which can
be set independently of the input common-mode
voltage. This, coupled with an input common-mode
range that extends below the negative supply rail, and
a near rail-to-rail output swing capability, results in a
simple driver amplifier solution for a variety of ADCs.
The MCP6D11 is the ideal interface solution for
converting single-ended, ground-referenced signal
sources into a fully differential output signal required to
preserve the high performance of today’s ultra-low
distortion, single-supply ADCs.
The MCP6D11 is specified for the -40°C to +125°C
temperature range and is available in QFN-16
(3 x 3 mm) and MSOP-8 package options.
Typical Applications
• Precision ADC Driver:
- 14/16/18-bit SAR ADCs
- Delta-Sigma ADCs
• Single-Ended to Differential Conversion
• Differential Active Filter
• Line Drivers
MCP6D11 Harmonic Distortion with a
10 kHz, 2Vpp Signal
Design Aids
• Microchip Advanced Part Selector (MAPS)
• Application Notes
Related Parts
• MCP331x1D SAR ADCs
2019 Microchip Technology Inc.
DS20006162A-page 1
MCP6D11
NOTES:
DS20006162A-page 2
2019 Microchip Technology Inc.
MCP6D11
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
.................................................................................................................................................................6.0V
Supply Voltage Turn-on/off max. dV/dt at +25°C .............................................................................................. ±0.35V/µs
Supply Voltage Turn-on/off max. dV/dt at +125°C .............................................................................................. ±0.2V/µs
Current at all Inputs (continuous) ........................................................................................................................ ±10 mA
Voltage at all Inputs and Outputs ...............................................................................................V
SS
– 0.3V to V
DD
+0.3V
Differential Input Voltage ......................................................................................................................................... ±1.0V
Current at Output and Supply Pins (continuous)...................................................................................................±20 mA
Storage Temperature .............................................................................................................................-65°C to +150°C
Maximum Junction Temperature .......................................................................................................................... +155°C
ESD protection on all pins (HBM, CDM)

4 kV, 2 kV
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, T
A
= 25°C,
V
DD
= +2.5V to 5.5V, V
SS
= 0V,
PD\ = V
DD
, V
OCM
= open,
V
ICM
= V
DD
/2, Single-ended input, G = 1V/V, R
F
= R
G
= 1 k, R
L
= 1 k between differential outputs.
Parameters
AC Response
Gain-Bandwidth Product
Bandwidth
(Small-signal, -3 dB)
GBWP
BW
Bandwidth
(Large-signal, -3 dB)
Bandwidth for 0.1 dB
Gain Flatness
Slew Rate (differential)
SR
BW
Settling Time to 0.1%
Settling Time to 0.01%
Rise and Fall Times
Overdrive Recovery Time
Closed-Loop Output Impedance
Output Balance Error
Note 1:
t
R
, t
F
t
rec
R
out
BAL
t
S
90
82
80
48
10
6.4
4
27
26
24
23
160
170
200
215
34
150
200
0.1
85
dB
C
C
ns
ns
C
C
ns
C
MHz
MHz
V/µs
C
C
C
MHz
MHz
C
C
G = 10V/V
G = 1V/V, V
OUT_DM
= 20mVpp, V
DD
= 5V
G = 1V/V, V
OUT_DM
= 20mVpp, V
DD
= 3V
G = 2V/V, V
OUT_DM
= 20mVpp, V
DD
= 5V
G = 10V/V, V
OUT_DM
= 20mVpp, V
DD
= 5V
G = 1V/V, V
OUT_DM
= 2Vpp, V
DD
= 5V
G = 1V/V, V
OUT_DM
= 2Vpp, V
DD
= 5V
G = 1V/V, V
OUT_DM
= 2V step, V
DD
= 5V
G = 2V/V, V
OUT_DM
= 2V step, V
DD
= 5V
G = 1V/V, V
OUT_DM
= 2V step, V
DD
= 3V
G = 2V/V, V
OUT_DM
= 2V step, V
DD
= 3V
G = 1V/V, V
OUT_DM
= 2V step, V
DD
= 5V
G = 1V/V, V
OUT_DM
= 2V step, V
DD
= 3V
G = 1V/V, V
OUT_DM
= 2V step, V
DD
= 5V
G = 1V/V, V
OUT_DM
= 2V step, V
DD
= 3V
V
OUT_DM
= 1Vpp step
V
DD
= 5V, 0.5V overdrive
V
DD
= 3V, 0.5V overdrive
f = 1 MHz, differential
At DC
Sym.
Min.
Typ. Max.
Units
Test
Level
(Note
1)
Conditions
“Test Level” designation: A = 100% production tested at 25°C; B = not production tested, limits set by characterization
and/or simulation, C = values for information only (based on characterization or design).
2019 Microchip Technology Inc.
DS20006162A-page 3
MCP6D11
AC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= 25°C,
V
DD
= +2.5V to 5.5V, V
SS
= 0V,
PD\ = V
DD
, V
OCM
= open,
V
ICM
= V
DD
/2, Single-ended input, G = 1V/V, R
F
= R
G
= 1 k, R
L
= 1 k between differential outputs.
Parameters
Noise and Distortion
Input Noise Voltage Density
Input Noise Current Density
2nd Order Harmonic Distortion
e
ni
i
ni
HD2
3rd Order Harmonic Distortion
HD3
Note 1:
5.0
0.6
-137
-138
-118
-120
-137
-137
-116
-116
dBc
C
nV/√Hz
pA/√Hz
dBc
C
C
C
at f > 10 kHz
at f
100 kHz
f = 10 kHz, 2Vpp, V
DD
= 3V
f = 10 kHz, 2Vpp, V
DD
= 5V
f = 100 kHz, 2Vpp, V
DD
= 3V
f = 100 kHz, 2Vpp, V
DD
= 5V
f = 10 kHz, 2Vpp, V
DD
= 3V
f = 10 kHz, 2Vpp, V
DD
= 5V
f = 100 kHz, 2Vpp, V
DD
= 3V
f = 100 kHz, 2Vpp, V
DD
= 5V
Sym.
Min.
Typ. Max.
Units
Test
Level
(Note
1)
Conditions
“Test Level” designation: A = 100% production tested at 25°C; B = not production tested, limits set by characterization
and/or simulation, C = values for information only (based on characterization or design).
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= 25°C,
V
DD
= +2.5V to 5.5V, V
SS
= 0V,
PD\ = V
DD
, V
OCM
= open,
V
ICM
= V
DD
/2, Single-ended input, G = 1V/V, R
F
= R
G
= 1 kR
L
= 1 kbetween differential outputs.
Test
Level
(Note
1)
A
B
A
A
B
B
B
A
B
C
T
A
= -40°C to +125°C
(QFN) (Note
4)
(Note
3)
T
A
= +85°C
T
A
= +125°C
T
A
= -40°C to +125°C
(QFN) (Note
4)
T
A
= -40°C to +125°C
(Note
4)
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Drift
Power Supply Rejection
Input Bias Current and Impedance
Input Bias Current
Input Bias Current,
across Temperature
Input Bias Current Drift
Input Offset Current
Input Offset Current Drift
Differential Input Impedance
Note 1:
2:
3:
4:
Sym.
Min.
Typ.
Max.
Units
Conditions
V
OS
V
OS
/T
A
PSRR
I
B+
, I
B-
-150
-2.0
100
-1.7
-1.9
-2.1
±25
±0.5
117
-0.7
-0.8
-1.1
±2.75
±10
±40
88||1.0
+150
+2.0
-0.4
-0.5
+3.6
+60
+130
µV
µV/°C
dB
µA
µA
µA
nA/°C
nA
pA/°C
k||pF
I
B
/T
A
I
OS
I
OS
/T
A
Z
DIFF
-3.6
-60
-130
“Test Level” designation: A = 100% production tested at 25°C; B = not production tested, limits set by characterization
and/or simulation, C = values for information only (based on characterization or design).
The V
ICM
spec is supported by the CMRR tests.
Negative polarity sign indicates current flowing out of node.
Based on data taken at the temperature range end-points (-40°C, +125°C) and calculated deltas are divided by the tem-
perature range. The Max./Min. specifications are set using +/-4 standard deviations on the device distribution.
DS20006162A-page 4
2019 Microchip Technology Inc.
MCP6D11
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, T
A
= 25°C,
V
DD
= +2.5V to 5.5V, V
SS
= 0V,
PD\ = V
DD
, V
OCM
= open,
V
ICM
= V
DD
/2, Single-ended input, G = 1V/V, R
F
= R
G
= 1 kR
L
= 1 kbetween differential outputs.
Test
Level
(Note
1)
A
B
V
dB
A
B
A
B
A
B
Parameters
Common-Mode
Common-Mode Input Range, high
Common-Mode Input Range, low
Common-Mode Rejection Ratio
Sym.
Min.
Typ.
Max.
Units
Conditions
V
ICM_H
V
ICM_L
CMRR
V
DD
- 1.0
V
DD
- 1.2
95
95
90
90
V
DD
- 0.9
V
DD
- 1.0
V
SS
- 0.1
112
110
107
105
V
SS
V
(Note
2)
T
A
= -40°C to + 125°C
(Note
2)
T
A
= -40°C to + 125°C
V
DD
= 5.5V
V
DD
= 5.5V
T
A
= -40°C to + 125°C
V
DD
= 2.5V
V
DD
= 2.5V
T
A
= -40°C to + 125°C
V
DD
= 5.5V
V
OUT
= 0.4V to
V
DD
– 0.4V
V
DD
= 5.5V,
T
A
= -40°C to +125°C
V
DD
= 2.5V,
V
OUT
= 0.25V to
V
DD
– 0.25V
V
DD
= 2.5V,
T
A
= -40°C to +125°C
QFN package only;
pins 10-4, 11-1
QFN package only;
pins 10-4, 11-1
V
DD
= 5.5V,
0.5V overdrive
V
DD
= 2.5V,
0.5V overdrive
V
DD
= 5.5V,
0.5V overdrive
V
DD
= 2.5V,
0.5V overdrive
V
SS
- 0.25 V
SS
- 0.15
Open Loop Gain
DC Open Loop Gain
A
OL
106
124
dB
A
102
106
118
121
B
A
102
Internal Feedback Trace Resistance
Internal Feedback Trace Resistance
Mismatch
Output
Maximum Output Voltage Swing
V
OL
V
OH
V
DD
- 150
V
DD
- 75
Output Short Circuit Current
Note 1:
2:
3:
4:
I
SC
114
3
0.05
B
C
C
V
SS
+ 75
V
SS
+ 33
V
DD
- 100
V
DD
- 50
±66
±75
V
SS
+ 100
V
SS
+ 50
mV
A
mA
C
V
DD
= 2.5V
V
DD
= 5.5V
“Test Level” designation: A = 100% production tested at 25°C; B = not production tested, limits set by characterization
and/or simulation, C = values for information only (based on characterization or design).
The V
ICM
spec is supported by the CMRR tests.
Negative polarity sign indicates current flowing out of node.
Based on data taken at the temperature range end-points (-40°C, +125°C) and calculated deltas are divided by the tem-
perature range. The Max./Min. specifications are set using +/-4 standard deviations on the device distribution.
2019 Microchip Technology Inc.
DS20006162A-page 5
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