TEA2016AAT
Rev. 1.2 — 6 April 2020
Digital controller for high-efficiency resonant power supply
Product data sheet
1
General description
The TEA2016AAT is a digital configurable LLC and PFC combo controller for high-
efficiency resonant power supplies. It includes both the LLC controller functionality and
PFC controller operating in DCM and QR mode. The TEA2016AAT enables building a
complete resonant power supply which is easy to design and has a very low component
count. The TEA2016AAT comes in a low profile and narrow body-width SO16 package.
The TEA2016AAT digital architecture is based on a high-speed configurable hardware
state machine ensuring very reliable real-time performance. During the power supply
development, many operation and protection settings of the LLC and PFC controller
can be adjusted by loading new settings into the device to meet specific application
requirements. The configurations can be fully secured to prevent unauthorized copying of
the proprietary TEA2016AAT configuration content.
In contrast to traditional resonant topologies, the TEA2016AAT shows a very high
efficiency at low loads due to the low-power mode. This mode operates in the power
region between continuous switching (also called high-power mode) and burst mode.
Because the TEA2016AAT regulates the output voltage of the system via the primary
capacitor voltage, it has accurate information about the power delivered to the output.
This measured output power defines the mode of operation (burst mode, low-power
mode, or high-power mode). The transition levels of the operating modes can be easily
programmed into the device.
The TEA2016AAT contains all protections like overtemperature protection (OTP),
overcurrent protection (OCP), overvoltage protection (OVP), overpower protection (OPP),
open-loop protection (OLP), and capacitive mode regulation (CMR). Each of these
protections can be configured independently and accurately by programming parameters
inside the device.
The device contains both a low-voltage and high-voltage silicon technology for high-
voltage start-up, integrated drivers, level shifter, protections, and circuitry assuring zero-
voltage switching.
The TEA2016AAT/TEA1995T combination gives an easy to design, highly efficient, and
reliable power supply, providing 90 W to 500 W, with a minimum of external components.
The system provides a very low no-load input power (< 75 mW; total system including the
TEA2016AAT/TEA1995T combination) and high efficiency from minimum to maximum
load. This power supply meets the efficiency regulations of Energy Star, the Department
of Energy, the Eco-design directive of the European Union, the European Code of
Conduct, and other guidelines. So, any auxiliary low-power supply can be omitted.
NXP Semiconductors
Digital controller for high-efficiency resonant power supply
TEA2016AAT
2
Features and benefits
2.1 Distinctive features
•
•
•
•
•
•
•
•
Complete functionality of LLC and PFC controller in single small-size SO16 package
Integrated high-voltage start-up
Integrated drivers and high-voltage level shifter (LS)
High-side driver directly supplied from the low-side driver output (patent nr
82059363US01)
Accurate boost voltage regulation
Integrated X-capacitor discharge without additional external components
Power good function
Several parameters can easily be configured, like:
–
Operating frequencies to be outside the audible area at all operating modes
–
Soft start and soft stop in burst mode, reducing the audible noise
–
Accurate transition levels between operation modes (high-power mode/low-power
mode/burst mode)
2.2 Green features
•
•
•
•
Valley/zero voltage switching for minimum switching losses
Extremely high efficiency from low load to high load
Compliant with latest energy saving standards and directives (Energy Star, EuP)
Excellent no-load input power (< 75 mW for TEA2016AAT/TEA1995T combination)
2.3 Protection features
•
Independently configurable levels and timers
•
All protections can independently be set to latched, safe restart, or latched after several
attempts to restart (Patent 82096505US01)
•
Supply undervoltage protection (UVP)
•
Overpower protection (OPP)
•
Internal and external overtemperature protection (OTP)
•
Capacitive mode regulation (CMR)
•
Accurate overvoltage protection (OVP)
•
Overcurrent protection (OCP)
•
Inrush current protection (ICP)
•
Brownin/brownout protection
•
Disable input
TEA2016AAT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.2 — 6 April 2020
2 / 58
NXP Semiconductors
Digital controller for high-efficiency resonant power supply
TEA2016AAT
3
Applications
•
•
•
•
Desktop and all-in-one PCs
LCD television
Notebook adapter
Printers
4
Ordering information
Package
Name
Description
plastic small outline package; 16 leads; body width 3.9 mm
Version
SOT109-1
SO16
Table 1. Ordering information
Type number
TEA2016AAT/1
5
Marking
Table 2. Marking code
Type number
TEA2016AAT/1
Marking code
TEA2016AAT
TEA2016AAT
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© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.2 — 6 April 2020
3 / 58
NXP Semiconductors
Digital controller for high-efficiency resonant power supply
TEA2016AAT
6
Block diagram
DRAINPFC
DIGITAL CORE AND CONTROL
Valleydet
V
prot(ovp)PFC
VALLEYDET
475 V
I
2.63 V
PFCOVP
start-up
Xcap
discharge
SUPIC
SNSBOOST
2.5 V
V
error
disable
0.39 V
GATEPFC
-10 mV
GATEPFC
demag
GATEHS
GATELS
LS
LLC DRIVERS
SUPHS
GATEHS
GATELS
SNSCURPFC
OCP
-0.3 V
V
hs(SNSCAP)
caph
INTC
SWITCHING CONTROL
D/A
SNSMAINS
5V
3V
IBI/BO
12 kΩ
6 kΩ
12 kΩ
OTP
V
mains
brownin/brownout
capl
V
is(SNSCAP)
D/A
VALLEY /
PEAK
DETECT
SNSCAP
low-power mode
burston
HB peak/valley
HB
LLCOCP
CMR
LLC CURRENT SENSE
+/-
+/-
= 1.5 V
SNSCURLLC
FEEDBACK CONTROL
1
:
1
A/D
12 kΩ
OPERATION MODE
V
POWERGOOD
P
P
lowpwr
= 0.1 V
0.96 V
1.2 V
2.4 V
s
r
# BURST
CYCLES
q
SNSFB
GND
aaa-026787
Figure 1. Block diagram
TEA2016AAT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2020. All rights reserved.
Product data sheet
Rev. 1.2 — 6 April 2020
4 / 58
NXP Semiconductors
Digital controller for high-efficiency resonant power supply
TEA2016AAT
7
Pinning information
7.1 Pinning
SNSMAINS
SNSBOOST
SNSCURPFC
GND
GATEPFC
GATELS
HVS
DRAINPFC
1
2
3
4
5
6
7
8
aaa-030882
16 SNSFB
15 SNSCURLLC
14 SNSCAP
IC
13 SUPIC
12 HVS
11 HB
10 SUPHS
9 GATEHS
Figure 2. TEA2016AAT pin configuration (SOT109-1)
7.2 Pin description
Table 3. Pin description
Symbol
SNSMAINS
SNSBOOST
SNSCURPFC
GND
GATEPFC
GATELS
HVS
DRAINPFC
GATEHS
SUPHS
HB
Pin Description
1
2
3
4
5
6
7
8
9
10
11
sense input for mains voltage and external temperature
sense input for boost voltage; externally connected to resistive divided
boost voltage
PFC current sense input
ground
PFC MOSFET gate driver output
LLC low-side MOSFET gate driver output and supply for bootstrap
capacitor
high-voltage spacer. Not to be connected.
internal HV start-up source also used for X- capacitor discharge, valley
detection, and PFC OVP detection; connected to (PFC) drain voltage
LLC high-side MOSFET gate driver output
high-side driver supply input; externally connected to bootstrap capacitor
(C
SUPHS
)
low-level reference for high-side driver and input for half-bridge slope
detection; externally connected to half-bridge node HB between the LLC
MOSFETs
high-voltage spacer. Not to be connected.
input supply voltage and output of internal HV start-up source; externally
connected to an auxiliary winding of the LLC via a diode or to an external
DC supply
LLC capacitor voltage sense input; externally connected to divider across
LLC capacitor
© NXP B.V. 2020. All rights reserved.
HVS
SUPIC
12
13
SNSCAP
14
TEA2016AAT
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1.2 — 6 April 2020
5 / 58
