STPS130
Datasheet
30 V, 1 A power Schottky rectifier
Features
•
•
•
•
•
Very low forward voltage drop for less power dissipation
Optimized conduction/reverse losses trade-off which means the highest yield in
the applications
Surface mount miniature packages
Avalanche rated
ECOPACK2
compliant
Applications
•
•
•
•
•
Cordless appliance
SSD
Battery charger
Telecom power
DC / DC converter
Description
Single Schottky rectifiers designed for high frequency miniature switched mode
power supplies such as adaptors and on board DC/DC converters.
Packaged in SMA, SMA Flat Notch or SMB, the
STPS130
is ideal for use in parallel
with MOSFETs in synchronous and low voltage secondary rectification.
Product status
STPS130
Product summary
Symbol
I
F(AV)
V
RRM
T
j(max.)
V
F(typ.)
Value
1A
30 V
150 °C
0.37 V
DS0933
-
Rev 7
-
September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STPS130
Characteristics
1
Characteristics
Table 1.
Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
Forward rms current
Average forward current, δ = 0.5, square wave
SMA
SMA Flat Notch, SMB
SMA, SMB
SMA Flat Notch
T
L
= 130 °C
T
L
= 135 °C
t
p
= 10 ms sinusoidal
t
p
= 10 µs, T
j
= 125 °C
Value
30
7
1
45
60
86
-65 to +150
+150
Unit
V
A
A
I
FSM
P
ARM
T
stg
T
j
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
(1)
A
W
°C
°C
1. (dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2.
Thermal resistance parameter
Symbol
Parameter
SMA
R
th(j-l)
Junction to lead
SMA Flat Notch
SMB
Max. value
30
20
23
°C/W
Unit
For more information, please refer to the following application note :
•
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3.
Static electrical characteristics
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
F
(2)
Min.
-
-
-
-
-
-
Typ.
Max.
10
Unit
µA
mA
V
R
= V
RRM
1.5
10
0.55
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
= 1 A
0.37
0.46
0.63
V
I
F
= 2 A
0.45
0.55
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.37 x I
F(AV)
+ 0.090 x I
F2(RMS)
For more information, please refer to the following application notes related to the power losses :
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
DS0933
-
Rev 7
page 2/14
STPS130
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Average forward power dissipation versus
average forward current
Figure 2.
Average forward current versus ambient
temperature (δ = 0.5, SMB)
1.2
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
0.6
0.5
0.4
0.3
0.2
P
F(AV)
(W)
I
F(AV)
(A)
R
th(j-a)
=R
th(j-l)
1.0
δ=1
0.8
R
th(j-a)
=100°C/W
0.6
0.4
T
0.1
0
0.0
0.2
0.4
0.2
T
I
F(AV)
(A)
0.6
0.8
δ
=tp/T
tp
0.0
δ
=tp/T
tp
Tamb (°C)
50
75
100
125
150
1.0
1.2
0
25
Figure 3.
Normalized avalanche power derating versus
pulse duration (T
j
= 125 °C)
P
ARM
(t p )
P
ARM
(10 µs)
1
Figure 4.
Relative variation of thermal impedance junction
to ambient versus pulse duration (SMB)
Z
th(j-a)
/ R
th(j-a)
1. 0
SMB
0. 8
0.1
0. 6
0. 4
0.01
0. 2
Single pulse
t
p
(s)
0.001
t
p
(µs)
1
10
100
1000
0. 0
1.0E-2
1.0E-1
1.0E+0
1.0E+1
1.0E+2
1.0E+3
DS0933
-
Rev 7
page 3/14
STPS130
Characteristics (curves)
Figure 5.
Relative variation of thermal impedance junction
to ambient versus pulse duration (SMA)
Z
th (j-a)
/R
t h(j-a)
1.0
SMA
Figure 6.
Reverse leakage current versus reverse voltage
applied (typical values)
I
R
(µA)
5E+3
1E+3
Tj = 125 °C
0.8
0.6
1E+2
Tj = 70 °C
0.4
1E+1
0.2
Single pulse
Single pul
1E+0
Tj = 25 °C
0.0
1E-2
1E-1
1E+0
t
p
( s )
1E+1
1E+2
1E+3
1E-1
0
VR(V)
5
10
15
20
25
30
Figure 7.
Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
500
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 8.
Forward voltage drop versus forward current
(maximum values)
10.00
I
F
(A)
200
1.00
100
T
j
=125°C
=75 °C
T
j
=125°C
= 125 °C
T
j
=25°C
50
0.10
20
V
R
(V)
V
F
(V)
0.01
10
20
30
10
1
2
5
0.0
0.2
0.4
0 .6
0.8
1 .0
1.2
Figure 9.
Thermal resistance junction to ambient versus
copper surface under each lead (SMB)
R
th(j-a)
(°C/W)
200
Epoxy p ri nted ci rcui t board FR4, coppe r t hi ckness: 35 µm
Figure 10.
Thermal resistance junction to ambient versus
copper surface under each lead (SMA)
R
th(j-a)
(°C/W)
200
SMB
150
Epoxy printed circuit board FR4, copper thickness: 35 µm
SMA
150
100
100
50
50
S
(Cu)
(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S
(Cu)
(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
DS0933
-
Rev 7
page 4/14
STPS130
Characteristics (curves)
Figure 11.
Thermal resistance junction to ambient versus copper surface under each lead (SMA Flat
Notch)
R
th(j-a)
(°C/W)
200
Epoxy printed circuit board FR4, copper thickness: 35 µm
SMA Flat Notch
150
100
50
S
(Cu)
(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
DS0933
-
Rev 7
page 5/14
