10N50TF
10 Amps,500 Volts N-CHANNEL Power MOSFET
FEATURE
10A,500V,R
DS(ON)MAX
=0.75
Ω@V
GS
=10V/5A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
H
alogen free
TO-220TF
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
T
J
,T
STG
T
L
10N50TF
500
UNIT
V
A
mJ
V/ns
℃
℃
lbf·in
N·m
±30
10
40
580
5
-55to+150
260
10
1.1
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
T
C
=25℃
Symbol
R
th(ch-c)
R
th(ch-a)
P
D
10N50TF
3.13
62.5
40
Units
℃/W
℃/W
W
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Electrical
Characteristics
(T
c
=25℃,unless otherwise noted)
Parameter
Symbol
BV
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
Test Conditions
Min
Typ
－
0.6
－
－
－
－
0.5
1620
154
8.4
Max
－
－
1
100
-100
4
0.75
－
－
－
Units
V
V/℃
uA
nA
nA
V
Ω
pF
pF
pF
Off C
haracteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
V
GS
=0V,I
D
=250uA
Reference
I
D
=250uA
V
DS
=500V,V
GS
=0V
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
V
DS
=V
GS
,I
D
=250uA
V
GS
=10V,I
D
=5A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
to
25℃
，
500
－
－
－
－
2
－
－
－
－
On C
haracteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic C
haracteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Continuous Diode Forward
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Current
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
I
S
I
SM
V
SD
t
rr
Q
rr
I
S
=10A,V
GS
=0V
V
GS
=0V,I
S
=10A,
dI
F
/dt=100A/us,
(Note4)
V
DS
=400V,I
D
=10A,
V
GS
=10V, (Note3,4)
V
DD
=250V,I
D
=10A,
R
G
=10Ω (Note3,4)
－
－
－
－
－
－
－
－
－
－
－
－
26
20
52
21
32
7.9
12
－
－
－
411
2.588
－
－
－
－
－
－
－
10
40
1.5
－
－
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
uC
Drain-Source Body Diode Charcteristics and Maximum Ratings
Pulsed Diode Forward Current
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. L=10mH,I
AS
=10.8A , starling T
J
=25℃.
3. I
SD
=10A,dI/dt≤100A/us,V
DD
≤BV
DSS
,starting T
J
=25℃,Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
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TEST CIRCUIT AND WAVEFORM
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RATINGAND CHARACTERISTIC CURVES
32
I
D
,Drain-to-Source Current(A)
10
T
J
=25℃
V
GS
,Gate-to-Source Voltage(V)
Vgs=10V
7V
6V
24
8
6
4
2
0
V
DS
=400V
16
5V
8
4.5V
0
0
5
10
15
20
V
DS
,Drain-to-Source Voltage(V)
25
0
8
24
16
32
Q
g
,Total Gate Charge(nC)
40
100
I
SD
, Reverse Drain Current(A)
10000
C
iss
Capacitance(pF)
10
T
J
=150℃
T
J
=25℃
1000
100
C
oss
1
10
C
rss
V
GS
=0
V
0.1
0.2
0.4 0.6 0.8 1.0 1.2
V
DS
,Source-Drain Voltage(V)
1.4
1
0.1
100
1
10
V
DS
,Drain-to-Source Voltage(V)
1000
700
R
DS(ON)
, Rrain-Source
On-Resistance ,Nomalized
3
2.5
2
1.5
1
0.5
0
650
Vds, Drain
-
to
-
Source
Brakdown Voltage(V)
600
550
500
450
400
-60 -40 -20 0 25 50 75 100 125 150 175
Tj,Juntion Temperature(
℃
)
0
50
25
75
100 125
Tj,Juntion Temperature(
℃
)
150
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