120N03
DESCRIPTION
The 120N03 uses advanced trench technology
And design to provide excellent
R
DS (ON )
with
V
DS
30V
R
DS(ON)
2.5m
Ω
I
D
120A
Low gate charge .
It can be used in a wide
Vanety of applications .
GENERAL FEATURES
½
V
DS
= 30 V, I
D
= 120 A
R
DS(ON)
< 4 mΩ @ V
GS
= 10 V
½
½
½
½
½
(Typ:2.5mΩ )
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stabilty and unifomity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
½
½
½
Power switching application
Hard Switched and High Frequency Circuits
Ordering Information
PART NUMBER
PACKAGE
BRAND
120N03
Uninterruptible Power Supply
TO-220
OGFD
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
120N03
Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
Symbol
V
DS
I
D
I
DM
P
D
V
GS
E
AS
T
J
and T
STG
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Drain Current-Continuous(Tc=100
℃)
Pulsed Drain Current@VG=10V
Power Dissipation
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Operating Junction and Storage Temperature Range
120N03
30
120
84
400
120
± 20
350
-55 to 175
W
V
mJ
℃
A
Units
V
Thermal Resistance
Symbol
R
θJC
Parameter
Junction-to-Case
Min.
--
Typ.
--
Max.
1.25
Units
℃/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175℃.
OFF Characteristics TJ=25℃ unless otherwise specified
Symbol
B
VDSS
I
GSS
I
DSS
Parameter
Drain-to-Source
Voltage
Breakdown
Min.
30
--
--
Typ.
--
--
--
Max.
--
±100
1
Units
V
nA
µA
Test Conditions
V
GS
=0, I
D
=250µA
V
DS
=0V, V
GS
=±20V
V
DS
=30V, V
GS
=0V
Gate-to-Source Forward Leakage
Zero Gate Voltage Drain Current
ON Characteristics TJ=25℃ unless otherwise specified
Symbol
R
DS(ON)
V
GS(TH)
G
fs
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage, Figure 12.
Forward Transconductance
Min.
--
1.0
50
Typ.
2.5
1.6
---
Max
4.0
3.0
--
Units
mΩ
V
S
Test Conditions
V
GS
=10V,I
D
=20A
V
DS
=10V, I
D
=250µA
V
DS
=10V, I
D
=20A
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TEL：0755-86350980
FAX：0755-86350963
120N03
Dynamic Characteristics Essentially independent of operating temperature
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Min.
--
--
--
--
--
--
Typ.
3550
1350
120
48
11
10
Max.
--
--
--
--
--
--
nC
V
DS
=15V, V
GS
=10 V,
I
D
=20A
pF
V
DS
=25V,V
GS
=0V, f=1.0MHZ
Units
Test Conditions
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Forword Turn-On Time
V
SD
I
S
t
rr
Q
rr
t
on
V
GS
=0V,I
S
=20A
--
TJ=25℃,IF= 20A
Di/dt = 100 A/µs
--
--
--
--
--
--
21
58
1.2
120
--
--
V
A
nS
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD
Notes:
1. Repetitive Rating:Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t
≤10
sec.
3. Pulse Test:Pulse Width
≤
300µs, Duty Cycle
≤
2%.
4. Guaranteed by design, not subject to production.
5. EAS condition: Tj=25℃,VDD=100V,VG=10V,L=0.5mH,Rg=25Ω.
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
120N03
Test circuit
1）E
AS
test Circuits
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
120N03
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
I
D
- Drain Current (A)
Normalized On-Resistance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 5 Gate Charge
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
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