12N65TF
12 Amps,650 Volts N-CHANNEL MOSFET
FEATURE
12A,650V,R
DS(ON)MAX
=0.75Ω@V
GS
=10V/6A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
TO-220TF
Absolute Maximum Ratings
(T
C
=25℃,unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Mounting Torque
6-32 or M3 screw
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
T
J
,T
STG
T
L
12N65TF
650
±30
12
48
900
12
33
5.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
℃
℃
lbf·in
N·m
Thermal
Parameter
Characteristics
Symbol
R
th(J-c)
T
C
=25℃
P
D
TO-220TF
3.81
33
Units
℃/W
W
Thermal resistance , Junction to Case
Maximum Power Dissipation
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Electrical
Characteristics
(T
c
=25℃,unless otherwise noted)
Parameter
Symbol
BV
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
Test Conditions
V
GS
=0V,I
D
=250uA
Reference to 25℃，
I
D
=250uA
V
DS
=650V,V
GS
=0V
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
V
DS
=10V,I
D
=250uA
V
GS
=10V,I
D
=6A
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
Min
650
－
－
－
－
2
－
Typ
－
0.6
－
－
－
Max
－
－
1
10
-10
4
0.75
－
－
－
Units
V
V/℃
μA
μA
μA
V
Ω
pF
pF
pF
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
On Characteristics
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
SD
t
rr
Q
rr
I
S
=12A,V
GS
=0V
V
GS
=0V,I
S
=12A,
dI
F
/dt=100A/us,
(Note4)
V
DS
=480V,I
D
=12A,
V
GS
=10V, (Note4,5)
V
DD
=300V,I
D
=12A,
R
G
=4.7Ω
(Note4,5)
－
－
－
－
－
－
－
20
28
55
30
58
14
32
－
600
43
－
－
－
－
－
－
－
1.5
－
－
ns
ns
ns
ns
nC
nC
nC
V
ns
μC
－
－
－
2107
195
16
－
0.60
Drain-Source Body Diode Charcteristics and Maximum Ratings
－
－
－
Notes
1.
2.
3.
4.
Repetitive Rating:pulse width limited by maximum junction temperature.
V
DD
=50V,L=12.5mH,R
g
=25Ω,I
AS
=12A , starting T
J
=25℃.
dI/dt=200A/us,starting T
J
=25℃.Pulse width≤300us;duty cycle≤2%.
Repetitive rating; pulse width limited by maximum junction temperature.
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RATINGAND CHARACTERISTIC CURVES
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RATINGAND CHARACTERISTIC CURVES
30
I
D
,Drain-to-Source Current(A)
V
GS
,Gate-to-Source Voltage(V)
25
20
15
10
5
0
0
7V
6V
5V
8
4
0
0
20
40
60
80
100
Q
g
,Total Gate Charge(nC)
120
5
10
15
20
25
V
DS
,Drain-to-Source Voltage(V)
30
100
I
SD
, Reverse Drain Current(A)
10000
C
iss
V
GS
= 0
V,f = 1MHz
C
iss
=
C
gs
C
g
d
,C
ds
Shorted
C
rss
=
C
g
d
C
oss
=
C
ds
+ C
gd
Capacitance(pF)
10
T
J
=150℃
T
J
=25℃
1000
C
oss
100
1
10
C
rss
V
GS
=0
V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0
100
200
300
400
500
600
V
DS
,Source-Drain Voltage(V)
800
R
DS(on)
,Drain-to-Source
On Resistance (Normalized)
V
DS
,Drain-to-Source Voltage(V)
3
2.5
2
1.5
1
0.5
0
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Junction Temperature(
℃
)
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I
D
=6.0
A
750
V
DS
, Drain-to-Source
Brakdown Voltage(V)
700
650
600
550
500
-60 -40 -20 0 25 50 75 100 125 150 175
T
J
, Junction Temperature(
℃
)
V
D
12
S
=
48
0V
15V TOP
14V
13V
12V
11V
10V
9V
24
V
DS
=300V
20
16
S
8V
T
J
=25℃
V
D
2
=1
0V
V
GS
=10
V
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