1404TR
N-ChannelMOSFETS
DESCRIPTION
The
OGFD
1404TR
uses
advanced
trench
V
DSS
40V
R
DS(ON)
4m
Ω
I
D
190A
technology and design to provide excellent R
DS(ON)
with low gate charge.
variety of applications.
It can be used in a wide
Features:
•
•
•
•
•
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high E
AS
.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.
Applications
•
•
•
•
Power switching applications.
Inverter systems
Hard switched and high frequency circuits.
Uninterruptible power supply systems.
1404TR
TO-220
0GFD
Ordering Information
PART NUMBER
PACKAGE
BRAND
www.goford.cn
TEL
：0755-86350980
FAX：0755-86350963
1404TR
AbsoluteMaximum Ratings (TC=25℃, unless otherwise noted)
Symbol
V
DSS
I
D
I
DM
P
D
V
GS
E
AS
dv/dt
T
J
and T
ST G
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current@VG=10V
Power Dissipation
Derating Factor above 25℃
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
1404TR
40
190
750
220
1.47
± 20
1400
5.0
-55 to 175
Units
V
A
W
W/℃
V
mJ
V/ns
℃
ThermalResistance
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Min.
--
--
Typ.
--
--
Max.
0.68
℃/W
--
Units
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175℃.
1 cubic foot chamber, free air.
OFF CharacteristicsTJ=25℃ unless otherwisespecified
Symbol
B
VDSS
I
GSS
I
DSS
Parameter
Drain-to-Source
Voltage
Breakdown
Min.
40
--
--
Typ.
--
--
--
Max.
--
±100
1
Units
V
nA
uA
Test Conditions
V
GS
=0, I
D
=250uA
V
DS
=0V, V
GS
=±20V
V
DS
=40V, V
GS
=0V
Gate-to-Source Forward Leakage
Zero Gate Voltage Drain Current
ON CharacteristicsTJ=25℃ unless otherwise specified
Symbol
R
DS(ON)
V
GS(TH)
G
fs
Parameter
Static
On-Resistance
Drain-to-Source
Min.
--
2.0
170
Typ.
--
--
---
Max
4
4.0
--
Units
mΩ
V
S
Test Conditions
V
GS
=10V,I
D
=40A
V
DS
=10V, I
D
=250uA
V
DS
=50V, I
D
=75A
Gate Threshold Voltage, Figure 12.
Forward Transconductance
www.goford.cn
TEL
：0755-86350980
FAX：0755-86350963
1404TR
DynamicCharacteristicsEssentially independentof operating temperature
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Min.
--
--
--
--
--
--
Typ.
6500
916
780
163
31
64
Max. Units
--
--
--
--
--
--
nC
V
DS
=30V, V
GS
=10V,
I
D
=30A
pF
V
DS
=25V,V
GS
=0V,
f=1.0MHZ
Test Conditions
Resistive Switching CharacteristicsEssentially independentof operatingtemperature
Symbol
T
d(ON)
T
rise
T
d(OFF)
T
fall
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
Typ.
26
24
ns
91
39
V
DD
=30V, R
L
=15Ω
V
GS
=10V, R
G
=2.5Ω
I
D=
2A
Max.
Units
Test Conditions
www.goford.cn
TEL
：0755-86350980
FAX：0755-86350963
1404TR
www.goford.cn
TEL
：0755-86350980
FAX：0755-86350963
1404TR
www.goford.cn
TEL
：0755-86350980
FAX：0755-86350963
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