GOFORD
General Description
The 18N10. combines advanced trench
MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for power
switching application.
18N10.
Features
V
DSS
100V
@ 10V (typ)
R
DS(ON)
35
m
Ω
I
D
18A
Schematic Diagram
Application
●
●
Power switching application
LED
backlighting
To-252
●
RoHS Compliant
Ordering Information
Part Number
18N10.
Marking
18N10.
Case
TO-252
Packaging
2500pcs/Reel
Table 1.
Absolute Maximum Ratings (TA=25℃)
Parameter
Drain-Source Voltage (
V
GS=
0V)
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25℃
Drain Current-Continuous@ Current-Pulsed
Maximum Power Dissipation(Tc=25℃)
(Note 1)
Symbol
V
DS
V
GS
I
D (DC)
I
DM (pluse)
P
D
E
AS
Value
100
±20
18
72
47
20
-55 To 175
Unit
V
V
A
A
W
Single Pulse Avalanche Energy
(Note 2)
mJ
℃
T
J
,T
STG
Operating Junction and Storage Temperature Range
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T
J
=25℃,V
DD
=50V,V
G
=10V, R
G
=25Ω
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TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Table 2. Thermal Characteristic
Symbol
Parameter
R
θJC
Thermal Resistance,Junction-to-Case
18N10.
Value
---
Max
3.2
Unit
℃
/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
Min
On/Off States
BV
DSS
I
DSS
I
DSS
I
GSS
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=100℃)
Gate-Body Leakage Current
Drain-Source On-State Resistance
V
GS
=0V I
D
=250µA
V
DS
=100V,V
GS
=0V
V
DS
=100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
GS
=4.5V, I
D
=1 A
V
GS
=10V, I
D
= 1 A
Dynamic Characteristics
g
FS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=50V,I
D
=4.5A
V
GS
=10V
V
DS
=50V,V
GS
=0V
f=1.0MHz
V
DS
=5V,I
D
=4.5A
5
100
Typ
Max
Unit
V
1
µA
±100
38
35
55
45
nA
m
m
S
1380
88
60
26.8
6.4
12.4
PF
PF
PF
nC
nC
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Switching Times
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
=50V,R
L
=8.6
V
GS
=10V,R
G
=3
7
12
24
11
nS
nS
nS
nS
Source-Drain Diode Characteristics
I
SD
I
SDM
V
SD
t
rr
Q
rr
t
on
Source-Drain Current(Body Diode)
Pulsed Source-Drain Current(Body Diode)
Forward On Voltage
(Note 1)
(Note 1)
(Note 1)
18
72
T
J
=25℃,I
SD
=1A,V
GS
=0V
T
J
=25℃,I
F
=4.5A
di/dt=500A/µs
0.75
22
28
1
A
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by L
S
+L
D
)
Notes 1.
Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
1.5%, Starting T
J
=25
℃
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TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Test Circuit
1) E
AS
Test Circuits
)
18N10.
2) Gate Charge Test Circuit:
)
2) Gate Charge Test Circuit:
)
3) Switch Time Test Circuit：
)
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TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. On-Region Characteristics
Figure 2: Transfer Characteristics
18N10.
I
D
-Drain Current (A)
V
DS
Drain-Source Voltage (V)
Figure3.
ID vs Junction Temperature
I
D
-Drain Current (A)
V
GS
Gate-Source Voltage (V)
Figure4. On-Resistance vs. Junction Temperature
T
J
-Junction T
emperature(℃)
Figure5. On-Resistance vs. Gate-Source Voltage
Normalized On-Resistance
I
D
-Drain Current(A)
Temperature (°C)
Figure6. Body-Diode Characteristics
R
DS(ON)
On-Resistance (mΩ)
I
s
-Reverse Drain Current (A)
V
GS
Gate-Source Voltage (V)
V
SD
Source-Drain Voltage (V)
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TEL：0755-29961262
FAX：0755-29961466
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GOFORD
Figure7. Gate-Charge Characteristics
18N10.
Figure 8. Capacitance Characteristics
V
GS
Gate-Source Voltage (V)
C Capacitance (pF)
Qg Gate Charge (nC)
Figure 9. Maximum Forward Biased Safe
Operating Area
V
SD
Source-Drain Voltage (V)
Figure10. Single Pulse Power Rating
Junction-to-Case
I
D
-Drain Current (A)
V
DS
Drain-Source Voltage (V)
Power (W)
Pulse Width (s)
Figure11.
Normalized Maximum Transient Thermal Impedance
R(t), Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
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TEL：0755-29961262
FAX：0755-29961466
Page 5
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