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1N4004

直流反向耐压(Vr):400V 平均整流电流(Io):1A 正向压降(Vf):1.1V @ 1A 400V,1A,VF=1.1V@1A

器件类别:分立半导体    通用二极管   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

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器件参数
参数名称
属性值
直流反向耐压(Vr)
400V
平均整流电流(Io)
1A
正向压降(Vf)
1.1V @ 1A
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1N4001 THRU 1N4007
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
FEATURES
DO-41
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.3)
DIA.
0.205(5.2)
0.166(4.2)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.025 (0.65)
0.021 (0.55)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N
4001
1N
4002
1N
4003
1N
4004
1N
4005
1N
4006
1N
4007
UNITS
VOLTS
VOLTS
VOLTS
Amp
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
30.0
1.1
5.0
50.0
15.0
50.0
-50 to +150
Amps
Volts
µ
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375 (9.5mm)lead length,P.C.B. mounted
RATINGS AND CHARACTERISTIC CURVES 1N4001 THRU 1N4007
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
INSTANTANEOUS FORWARD
CURRENT,AMPERES
20
10
100
TJ=150 C
1
10
0.1
T
J
=25 C
PULSE WIDTH=300
µs
1%DUTY CYCLE
TJ=100 C
1
0.01
0.6
0.8
1.0
1.2
1.4
1.5
0.1
TJ=25 C
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
200
100
T
J
=25 C
10
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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