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1N4148W

反向恢复时间(trr):4ns 直流反向耐压(Vr):75V 平均整流电流(Io):150mA 正向压降(Vf):1.25V @ 150mA 海鸥脚 75V,150mA,trr=4ns,VF=1.25V@150mA,PD=400mW

器件类别:分立半导体    开关二极管   

厂商名称:深圳辰达行电子(MDD)

厂商官网:http://www.microdiode.com/

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器件参数
参数名称
属性值
反向恢复时间(trr)
4ns
直流反向耐压(Vr)
75V
平均整流电流(Io)
150mA
正向压降(Vf)
1.25V @ 150mA
文档预览
1N4148W
FAST SWITHING DIODES
SOD-123
1.80(.071)
1.40(.055)
FEATURES
Fast switching speed
Surface mount package ideally suited
for automatic insertion
For general purpose switching applications
High conductance
3.86(0.152)
3.56(0.145)
2.84(0.112)
2.54(0.100)
.71(0.028)
.50(0.020)
.15(.006)
MAX
1.35(.053)
.94(.037)
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Marking:
T4
.25(.010)
MIN
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @T
A
=25C
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Reverse Breakdown voltage at
I
R
=1
μA
Forward continuous current
Average rectified output current
Peak forward current @=1.0ms
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature
Electrical ratings @T
A
=25C
PARAMETER
Froward voltage
SYMBOLS
SYMBOLS
Limits
100
75
75
300
150
2.0
400
250
125
-65 to +150
Min.
Typ.
Max.
0.715
0.855
1.0
1.25
0.025
1
30
50
5
8
Unit
V
V
V
V
Conditions
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
a t VR = 2 0 V
a t VR = 7 5 V
a t VR = 2 5 V
a t VR = 7 5 V
UNITS
V
mA
mA
A
mW
°C/W
C
C
V
RRM
V
RMS
V
(BR)R
I
FM
I
O
I
FSM
Pd
R
ΘJA
T
j
T
STG
Reverse current
Capacitance between terminals
Reverse recovery time
V
F1
V
F2
V
F3
V
F4
I
R1
I
R2
I
R3
I
R4
C
T
t
rr
uA
u
A
u
A
u
A
pF
ns
T j= 2 5
°C
T j= 2 5
°C
T j= 1 5 0
°C
T j= 1 5 0
°C
V
R
=0V,f=1.0MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100
RATINGS AND CHARACTERISTIC CURVES 1N4148W
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current(
μ
A)
500
100
Fig.2 Typical Reverse Characteristics
Total Power Dissipation (mW)
400
10
T
J
=150
°C
300
1
200
0.1
100
T
J
=25
°C
0.01
00
20
40
60
80
100
120
0.0
25
50
75
100
125
150
175
Ambient Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (mA)
Junction Capacitance ( pF)
1000
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
100
10
10
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
=25
°C
1.4
1.6
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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