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1N4150WT/R13

Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
ROHS COMPLIANT, PLASTIC PACKAGE-2
针数
2
Reach Compliance Code
compli
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-G2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.41 W
认证状态
Not Qualified
最大重复峰值反向电压
50 V
最大反向恢复时间
0.004 µs
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
1N4150W
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Very fast reverse recovery(T
RR
< .0ns typical)
• Low capacitance(4pF@0V typical)
• Surface Mount Package ldeally Suited for Automatic lnsertion
0.028(0.70)
0.019(0.50)
50 Volts
POWER
410 mWatts
SOD-123
0.154(3.90)
0.141(3.60)
0.110(2.80)
0.098(2.50)
Unit
inch(mm)
0.071(1.80)
0.055(1.40)
MECHANICAL DATA
• Case: SOD-123 plastic case.
• Terminals : Solderable per MIL-STD-750,Method 2026
• Standard packaging: 8mm tape
• Weight: approximately
g
• Marking : A4
0.008(0.20)MAX.
0.053(1.35)
0.037(0.95)
0.005(0.12)MAX.
0.016(0.40)MIN.
ABSOLUTE RATINGS
(T
J
=25°C )
PARAMETER
Maximum Reverse Voltage
Peak Reverse Voltage
Maximum Average Forward Current
Non-repetitve Peak Forward Surge Current at t=1.0s
SYMBOL
V
R
V
RRM
I
F(AV)
I
FSM
1N4150W
50
50
0.2
0.5
UNITS
V
V
A
A
THERMAL CHARACTERISTICS
PARAMETER
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
SYMBOL
P
TOT
R
ΘJA
T
J
, T
S TG
1N4150W
410
305
-55 to 150
UNITS
mW
o
C/W
o
C
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
REV.0.1-FEB.5.2009
PAGE . 1
1N4150W
ELECTRICAL CHARACTERISTICS (T
J
=25
O
C ,unless otherwise noted)
PARAMETER
Reverse Breakdown Voltage
Reverse Current
Forward Voltage
R e v e r s e R e c o v e r y Ti m e ( F i g u r e 1 )
SYMBOL
V
(BR)
I
R
V
F
T
RR
TEST CONDITION
I
R
=100
µA
V
R
= 5 0 V
I
F
=2 0 0 mA
I
F
=I
R
= 1 0 m A , R
L
= 1 0 0
MIN
50
-
-
-
TYP
-
-
-
-
MAX
-
100
1
4.0
UNITS
V
nA
V
ns
820
+10 V
2.0 kΩ
100 µH
0.1 µF
I
F
0.1 µF
DUT
50
Output
Pulse
Generator
50
Input
Sampling
Oscilloscope
NOTE:
1. A2.0k. variable resistor adjusred for forward current (I
F
) to 10mA
2.Input pulse is adjusted to I
R(peak)
is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
ELECTRICAL CHARACTERISTIC CURVES
1000
T
J
= 150 C
o
1000
Forward Current, I
F
(mA)
Reverse Current, I
R
(uA)
100
100
T
J
= 150 C
o
10
1
10
0.1
T
J
= 25 C
o
T
J
= 25 C
0.01
0
10
20
30
40
50
60
Reverse Voltage, V
R
(V)
o
1
0
0.2
0.4
0.6
0.8
1
Forward Voltage, V
F
(V)
Fig. 2. Reverse Current vs. Reverse Voltage
Fig. 3. Forward Current vs. Forward Voltage
REV.0.1-FEB.5.2009
PAGE . 2
1N4150W
MOUNTING PAD LAYOUT
SOD-123
Unit
inch(mm)
0.167
(4.25)
0.091
(2.31)
0.038
(0.97)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.5.2009
0.048
(1.22)
PAGE . 3
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