DATA SHEET
1N4151W
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching Speed.
• Electrically ldentical to Standerd JEDEC
• High Conductance
• Surface Mount Package ldeally Suited for Automatic lnsertion.
SOD-123
.154 (3.90)
.141 (3.60)
Unit: inch ( mm )
50 Volts
POWER
500 mWatts
.028 (0.70)
.019 (0.50)
MECHANICAL DATA
Case: SOD-123 plastic case.
Terminals : Solderable per MIL-STD-202,Method 208
Standard packaging: 8mm tape
Weight: approximately 0.01g
.005(.12) MAX.
.008 (.20) MAX.
.016(.40) MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PAR AMETER
Marki ng C ode
Reverse Voltage
Peak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C Blocki ng Voltage
Maxi mum Average Forward C urrent at T =25
O
C
a
Peak Forward Surge C urrent, 1.0s si ngle half si ne-wave
superi mposed on rated load (JED EC method)
Power D i ssi pati on D erate Above 25
O
C
Maxi mum Forward Voltage
Maxi mum D C Reverse C urrent at Rated D C Blocki ng Voltage
T
J
= 25
O
C
Typi cal Juncti on C apaci tance( Notes1)
Maxi mum Reverse Recovery (Notes2)
Maxi mum Thermal Resi stance
Storage T mperature Range
e
SYMB OL
1N4151W
A5
UNITS
V
R
V
RM
V
RMS
V
DC
I
AV
I
FSM
P
TOT
V
F
I
R
CJ
T
RR
RqJA
T
J
50
75
35
50
150
0.5
500
1.0@0.01A
0.05
2
2
400
O
.053 (1.35)
.037 (.95)
.071 (1.80)
.055 (1.40)
.110 (2.80)
.098 (2.50)
V
V
V
V
mA
A
mW
V
uA
pF
ns
C /W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2.From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
DATE : APR.02.2003
PAGE . 1
100
10
FORWARD CURRENT, mA
REVERSE CURRENT, mA
T
A
=150
O
C
1.0
T
A
=125
O
C
10
0.1
T
A
=85
O
C
1.0
T
A
=55
O
C
0.01
T
A
=25
O
C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0
10
20
30
40
50
FORWARD VOLTAGE, Volts
REVERSE VOLTAGE, Volts
FORWARD VOLTAGE
LEAKAGE CURRENT
DIODE CAPACIT
ANCE, pF
6.0
4.5
3.5
60 W
V
RF
=2V
2nF
5k W
Vo
1.5
0
0
2
4
6
8
RECTIFICATION EFFCIENCY MEASUREMENT CIRCUIT
REVERSE VOLTAGE, Volts
TYPICAL CAPATICANCE
DATE : APR.02.2003
PAGE . 2
电子工程世界
