1N4448WS
Silicon Epitaxial Planar Switching Diode
Fast Switching Diode
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current (at t = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F(AV)
I
FM
I
FSM
P
d
T
j
T
stg
Value
100
80
150
300
0.5
200
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 5 mA
at I
F
= 10 mA
at I
F
= 100 mA
at I
F
= 150 mA
Reverse Leakage Current
at V
R
= 80 V
at V
R
= 20 V
at V
R
= 75 V, T
J
= 150
O
C
at V
R
= 25 V, T
J
= 150
O
C
Reverse Breakdown Voltage
at I
R
= 100 µA
Total Capacitance
at V
R
= 0.5 V, f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
rr
= 0.1 X I
R
, R
L
= 100
Ω
Symbol
Min.
0.62
-
-
-
-
-
-
-
80
-
-
Max.
0.72
0.855
1
1.25
100
25
50
30
-
4
4
Unit
V
F
V
I
R
nA
nA
µA
µA
V
pF
ns
V
(BR)R
C
tot
t
rr
1N4448WS
1N4448WS
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
H
E
D
A
E
b
p
UNIT
mm
A
1.10
0.80
b
p
0.40
0.25
C
0.15
0.00
D
1.80
1.60
E
1.35
1.15
H
E
2.80
2.30
电子工程世界
