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1N4729A

3.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:南晶电子(DGNJDZ)

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1N4727A...1N4761A
Silicon Planar Power Zener Diodes
for use in stabilizing and clipping circuits with high
power rating.
Max. 0.7
Max. 2.8
Min. 25.4
Black
Cathode Band
Black
Part No.
XXX
Max. 4.2
Min. 25.4
Glass Case DO-41
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Symbol
P
tot
T
j
T
stg
Value
1
1)
Unit
W
O
200
- 65 to + 200
C
C
O
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 200 mA
1)
Symbol
R
thA
V
F
Max.
170
1)
1.2
Unit
K/W
V
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
1N4727A...1N4761A
Characteristics at T
a
= 25
O
C
Zener Voltage Range
3)
Type
1N4727A
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1)
Dynamic Resistance
1)
Z
ZT
Max.(Ω)
10
10
10
9
9
8
7
5
2
3.5
4
4.5
5
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
Z
ZK
Max.(Ω)
400
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
at I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Reverse Current
I
R
Max.(µA)
150
150
100
100
50
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
at V
R
(V)
1
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56
V
Znom
(V)
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
V
ZT
(V)
2.85…3.15
3.13…3.47
3.42…3.78
3.7…4.1
4.08…4.52
4.46…4.94
4.84…5.36
5.32…5.88
5.89…6.51
6.46…7.14
7.12…7.88
7.79…8.61
8.64…9.56
9.5…10.5
10.45…11.55
11.4…12.6
12.35…13.65
14.25…15.75
15.2…16.8
17.1…18.9
19…21
20.9…23.1
22.8…25.2
25.65…28.35
28.5…31.5
31.35…34.65
34.2…37.8
37.05…40.95
40.85…45.15
44.65…49.35
48.45…53.55
53.2…58.8
58.9…65.1
64.6…71.4
71.25…78.75
at l
ZT
(mA)
83
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7
6.5
6
5.5
5
4.5
4
3.7
3.3
Maximum Surge Maximum
4)
Current
Regulator
O
Current
2)
at T
a
= 25 C
I
ZSM
(mA)
1375
1375
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
I
ZM
(mA)
275
275
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
The dynamic resistance is derived from the 60 Hz AC voltage which results when an AC current having an RMS value equal to 10% of
the Zener Current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. Dynamic resistance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units.
2)
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
3)
Tested with pulses tp = 20 ms.
4)
The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or
equivalent sine wave pulse of 1/120 second duration superimposed on the test current I
ZT
.
Iz
Iz
mA
50
30
40
20
mA
100
10
30
50
60
70
80
90
20
40
10
0
0
0
1
IN4742
IN4745
IN4743
IN4744
T
j
=constant(pulsed)
1N4727A...1N4761A
Breakdowm characteristics
0
2
IN4746
IN4747
IN4748
IN4749
IN4727
IN4728
IN4730
IN47
29
10
3
IN4750
IN4751
IN4752
20
4
IN4753
IN4754
IN4755
IN4756
IN4731
IN4732
30
5
IN4757
IN4758
40
6
IN4759
50
Vz
IN4760
IN4733
IN4734
60
IN4735
IN4736
Vz
7
IN4761
70
8
IN4762
IN4737
IN4738
IN4739
80
IN4763
IN4764
9
90
T
j
=25
o
C
IN...
IN4740
10
100
IN4741
11
110
T
j
=25
o
C
IN...
12
120
1N4727A...1N4761A
1.0
250
P
d
. Total Power Dissipation (W)
Thermal Resistance Junction
to Ambient (°C/W)
R
JA
0.8
200
0.6
150
0.4
100
0.2
50
0
0
0
100
200
0
5
10
15
20
25
30
T
A
, Ambient Temperature
Fig. 1 Power Dissipation vs Ambient Temperature
I, Lead Length (mm)
Fig. 2 Typical Thermal Resistance vs. Lead Length
1000
f=1MHz
T
A
=25°C
1000
Differential Zener Impedance ( )
Ω
C
j
, Diode Capacitance (pF)
Iz=1mA
100
2mA
5mA
10mA
20mA
10
100
V
R
=0V
V
R
=2V
V
R
=5V
V
R
=20V
V
R
=30V
10
1
0
10
20
30
40
50
60
1
1
10
100
Vz, Zener Voltage (V)
Fig. 3 Junction Capacitance vs Zener Voltage
Vz, Zener Voltage (V)
Fig. 4 Typical Zener Impedance vs. Zener Voltage
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