1N5342B~1N5369B
SILICON ZENER DIODES
VOLTAGE
FEATURES
• Low profile package
• Built-in strain relief
• Low inductance
• Typical I
D
less than 1.0µA above 13V
.375(9.5)
.285(7.2)
1.0(25.4)MIN.
6.8 to 51 Volts
CURRENT
5.0 Watts
DO-201AE
Unit: inch(mm)
• For surface mounted applications in order to optimize board space.
.042(1.07)
.037(0.94)
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
• Case: JEDEC DO-201AE molded plastic
• Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denoted cathode except Bipolar
• Mounting Position: Any
• Weight: 0.0395 ounce, 1.122 gram
1.0(25.4)MIN.
.210(5.3)
.188(4.8)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
DC Power Dissipation on T
L
=75
O
C ,Measure at Zero Lead Length
Derate above 50
O
C ( NOTE 1)
Operating Junction and StorageTemperature Range
Symbol
Value
5.0
-55 to +150
Units
Watts
O
P
D
T
J
, T
STG
C
NOTE:
1.Mounted on 8.0mm
2
copper pads to each terminal.
STAD-FEB.10.2009
1
PAGE . 1
1N5342B~1N5369B
N o m i na l Ze ne r V o l t a g e
Part Number
No m. V
1N5342B
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
1N5368B
1N5369B
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
V
Z
@ I
ZT
M i n. V
6.46
7.13
7.79
8.27
8.65
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
44.65
48.45
M a x. V
7.14
7.88
8.61
9.14
9.56
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
49.35
53.55
Ω
1
2
2
2
2
2
3
3
3
3
3
3
3
3
3
3
4
4
4
5
6
8
10
11
14
20
25
27
M a x i m u m Z e n e r Im p e d a n c e
Z
ZT
@ I
ZT
mA
175
175
150
150
150
125
125
100
100
100
75
75
70
65
65
65
50
50
50
50
50
40
40
30
30
30
25
25
Ω
200
200
200
200
150
125
125
125
100
75
75
75
75
75
75
75
75
100
110
120
130
140
150
160
170
190
210
230
Z
ZK
@ I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Leakage Current
I
R
µA
10
10
10
10
7.5
5
5
2
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
V
R
V
5.2
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.9
10.6
11.5
12.2
12.9
13.7
14.4
15.2
16.7
18.2
19
20.6
21.2
22.8
25.1
27.4
29.7
32.7
35.8
38.8
STAD-FEB.10.2009
1
PAGE . 2
1N5342B~1N5369B
RATING AND CHARACTERISTIC CURVES
q
Vz,
TEMPERATURE COEFFICIENT
(mV/C)@IZT
8
P
D
, MAXIMUM STEADY STATE
POWER DISSIPATION (WATTS)
300
200
100
50
30
20
RANGE
6
4
2
10
5
0
20
40
60
80
100
0
0
30
60
90
120
150
T
L
, LEAD TEMPERATURE (
O
C)
Vz,ZENER VOLTAGE@Iz
T
(VOLTS)
Fig.1 Power temperature Derating Curve
Fig.2 Temperature Coefficient-Range
for Units 11 to 39 Volts
30
ir, PEAK SURGE CURRENT (AMPS)
1000
20
10
5
2
1
0.5
IZ, ZENER CURRENT (mA)
Vz=3.3V
T=25
O
C
100
10
Vz=51V
1
0.2
0.1
0.1
1
10
100
1000
10
20
30
40
50
PW, PULSE WIDTH (ms)
Vz, ZENER VOLTAGE (VOLTS)
Fig.3 Peak Surge Current versus Pulse Width
Fig.4 Zener Voltage versus Zener Current
Vz=11 thru 39 Volts
STAD-FEB.10.2009
1
PAGE . 3
电子工程世界
综合技术交流
