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1N5932B_B0_00001

Zener Diode

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
O-XALF-W2
Reach Compliance Code
_compli
ECCN代码
EAR99
外壳连接
ISOLATED
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
DO-41
JESD-30 代码
O-XALF-W2
端子数量
2
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1.5 W
标称参考电压
20 V
表面贴装
NO
技术
ZENER
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
5%
工作测试电流
18.7 mA
Base Number Matches
1
文档预览
1N5921B~1N5942B
SILICON ZENER DIODES
VOLTAGE
FEATURES
• Low profile package
1.0(25.4)MIN.
6.8 to 51 Volts
POWER
1.5 Watts
DO-41
Unit: inch(mm)
• Built-in strain relief
• Low inductance
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
Lead free in comply with EU RoHS 2002/95/EC directives
.034(.86)
.028(.71)
MECHANICALDATA
• Case: JEDEC DO-41,Molded plastic over passivated junction.
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes positive end (cathode)
• Standard packing: 52mm tape
• Weight: 0.0118 ounce, 0.336 gram
.205(5.2)
.160(4.1)
.107(2.7)
1.0(25.4)MIN.
.080(2.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
DC Power Dissipation on T
A
=75
O
C ,Measure at Zero Lead Length
Derate above 75
O
C ( NOTE 1)
Operating Junction and StorageTemperature Range
Symbol
Value
1.5
-55 to +150
Units
Watts
O
P
D
T
J
, T
STG
C
NOTES:
1.Mounted on 5.0mm2 (.013mm thick) land areas.
STAD-FEB.10.2009
1
PAGE . 1
1N5921B~1N5942B
Maximum
Leakage Current
I
R
mA
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
µA
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
V
5.2
6
6.5
7
8
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
N o m i na l Ze ne r V o l t a g e
Part Number
No m. V
1N5921B
1N5922B
1N5923B
1N5924B
1N5925B
1N5926B
1N5927B
1N5928B
1N5929B
1N5930B
1N5931B
1N5932B
1N5933B
1N5934B
1N5935B
1N5936B
1N5937B
1N5938B
1N5939B
1N5940B
1N5941B
1N5942B
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
V
Z
@ I
ZT
M i n. V
6.46
7.13
7.79
8.65
9.5
10.45
11.4
12.35
14.25
15.2
17.1
19
20.9
22.8
25.65
28.5
31.35
34.2
37.05
40.85
44.65
48.45
M a x. V
7.14
7.88
8.61
9.56
10.5
11.55
12.6
13.65
15.75
16.8
18.9
21
23.1
25.2
28.35
31.5
34.65
37.8
40.95
45.15
49.35
53.55
3
3
4
4
5
6
7
7
9
10
12
14
18
19
23
26
33
38
45
53
67
70
M a x i m u m Z e n e r Im p e d a n c e
Z
ZT
@ I
ZT
mA
55.1
50
45.7
41.2
37.5
34.1
31.2
28.8
25
23.4
20.8
18.7
17
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8
7.3
200
400
400
500
500
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
Z
ZK
@ I
ZK
STAD-FEB.10.2009
1
PAGE . 2
1N5921B~1N5942B
q
vz, TEMPERATURE COEFICENT (mV/
O
C)
MAXIMUM POWER DISSIPATION, Watts
2.5
2
1.5
1
0.5
0
10
8
6
4
2
0
-2
-4
2
4
6
8
10
12
V @I
Z ZT
0
20
40
60
80
100 120 140 150 180
LEAD TEMPERATURE, C
O
V , ZENER VOLTAGE (VOLTS)
Z
Fig.1 Steady State Power Derating
Fig.2 T
emperature coeeficient v.s. zener voltage,Vz(V)
q
vz, TEMPERATURE COEFICENT (mV/
O
C)
200
100
70
50
30
20
10
10
20
30
50
V @I
Z
ZT
Zz, DYNAMIC IMPEDANCE (OHMS)
1K
500
200
100
50
20
10
5
2
1
0.5
1
2
5
10
20
T = 25
O
C
J
I (rms) =0.1 I (dc)
Z
Z
22V
12V
6.8V
50
100 200
500
Vz, ZENER VOLTAGE (VOLTS)
Iz, ZENER TEST CURRENT (mA)
Fig.3 T
emperature coeeficient v.s. zener voltage,Vz(V)
Fig.4 Z
ener impedance v.s. zener current
1K
200
100
70
50
30
20
10mA
I Z (dc)=1mA
Ppk, PEAKSURGE POWER (WATTS)
Zz, DYNAMIC IMPEDANCE (OHMS)
500
300
200
100
50
30
20
10
0.1 0.20.3 0.5
RECTANGULAR
NONREPETITIVE
WAVEFORM
O
T J =25 C PRIOR
TO INTIAL PULSE
10
7
5
3
2
20mA
I Z (rms)=0.1I Z (dc)
5
7
10
20 3 0
40
50 60
70
100
1
2 3
5
10 2030 50
100
Vz, ZENER VOLTAGE (VOLTS)
PW, PULSE WIDTH (ms)
Fig.5 Z
ener impedance v.s. zener voltage
STAD-FEB.10.2009
1
Fig.6 Maximum Surge Power
PAGE . 3
1N5921B~1N5942B
100
Iz, ZENER CURRENT (mA)
100
Iz, ZENER CURRENT (mA)
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
10
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0 .1
0
10
20
30
40
Vz, ZENER VOLTAGE (VOLTS)
Vz, ZENER VOLTAGE (VOLTS)
Fig.7 Vz = 6.8 thru 10 Volts
Fig.8 Vz = 12 thru 82 Volts
NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT
Nominal zener voltage is measured with the device function in thermal equilibrium with ambient
O
temperature at 25 C
NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION
Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied.
The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz
STAD-FEB.10.2009
1
PAGE . 4
1N5921B~1N5942B
Part No_packing code_Version
1N5921B_AY_00001
1N5921B_AY_10001
1N5921B_B0_00001
1N5921B_B0_10001
1N5921B_R2_00001
1N5921B_R2_10001
For example :
RB500V-40_R2_00001
Serial number
Part No.
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
STAD-FEB.10.2009
1
PAGE . 5
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