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1N914

0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 100 V, 硅, 信号二极管, DO-35

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
零件包装代码
DO-35
包装说明
O-LALF-W2
针数
2
Reach Compliance Code
compli
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-35
JESD-30 代码
O-LALF-W2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
0.075 A
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.5 W
认证状态
Not Qualified
最大重复峰值反向电压
100 V
最大反向恢复时间
0.004 µs
表面贴装
NO
端子面层
Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
1N914
SWITCHING DIODES
VOLTAGE
100 Volts
POWER
500 mWatts
FEATURES
• Fast switching Speed.
• Electrically ldentical to Standerd JEDEC
• High Conductance
• Axial lead Package ldeally Suited for Automatic lnsertion.
• In compliance with EU RoHS 2002/95/EC directives
• Case: Molded Glass DO-35
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.012 grams
• Mounting Position: Any
• Packing information
B
- 2K per Bulk box
T/R - 10K per 13" plastic Reel
T/B - 5K per horiz. tape & Ammo box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PARAMETER
Reverse Voltage
Peak Reverse Voltage
RMS Voltage
Maximum Average Forward Current at T
A
=25
O
C And f > 50Hz
Surge Forward Current at t < 1s and T
J
=25
Power Dissipation at Tamb= 25
O
O
SYMBOL
V
R
V
RM
V
RMS
I
F(AV)
I
FSM
P
TOT
V
F
3.0
MECHANICAL DATA
1N914
75
100
50
75
500
500
1.0
25
5
50
4
4
350
-65 to +175
UNITS
V
V
V
mA
mA
mW
V
nA
µA
µA
pF
ns
O
C
C
Maximum Forward Voltage at I
F
=10mA
Maximum Leakage Current
at V
R
=20V
at V
R
=75V
at V
R
=20V ,T
J
= 150
O
C
Maximum Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
Junction Temperature and Storage Temperature Range
I
R
C
J
t
rr
R
θ
JA
T
J
,T
s
C/W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2. From I
F
=10mA to I
R
=1mA, V
R
=6Volts, R
L
=100Ω
STAD-FEB.06.2009
PAGE . 1
1N914
1000
10
FORWARD CURRENT, mA
T
J
=150
O
C
REVERSE CURRENT,uA
100
T
J
=25
O
C
1.0
T
J
=125
O
C
10
0.1
T
J
=85
O
C
1.0
T
J
=55
O
C
0.01
0.1
T
J
=25
O
C
0.01
0
1.0
2.0
0.001
0
10
20
30
40
50
FORWARD VOLTAGE, VOLTS
REVERSE VOLTAGE, VOLTS
FORWARD VOLTAGE
LEAKAGE CURRENT
P
D
,
POWER DISSIPATION (mW)
4.0
500
DIODE CAPACITANCE, pF
3.0
400
300
2.0
200
1.0
100
0
0
2
4
6
8
0
50
100
150
200
REVERSE VOLTAGE, VOLTS
AMBIENT TEMPERATURE(
O
C)
POWER DERATING
TYPICAL CAPATICANCE
STAD-FEB.06.2009
PAGE . 2
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