1N914, 1N914A, 1N914B
Silicon Epitaxial Planar Switching Diode
Features
• Fast switching speed
• High reliability
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
1N914
1N914A / B
Forward Continuous Current
1N914
1N914A / B
Non-Repetitive Peak Forward Surge Current
at t = 1 s
1N914
at t = 1 µs
1N914A / B at t = 1 µs
Power Dissipation
Operating and Storage Temperature Range
Symbol
V
RM
V
R
I
F(AV)
I
FM
I
FSM
P
tot
T
j
,T
stg
Value
100
75
75
200
150
300
1
1
4
500
- 65 to + 175
Unit
V
V
mA
mA
A
mW
O
C
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 5 mA
at I
F
= 100 mA
at I
F
= 10 mA
at I
F
= 20 mA
Reverse Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150
O
C
Diode Capacitance
at V
R
= 0, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA to I
R
= 1 mA, V
R
= 6 V, R
L
= 100
Ω
1N914B
1N914B
1N914
1N914A
Symbol
Min.
0.62
-
-
-
-
-
-
-
-
Max.
0.72
1
1
1
25
5
50
4
4
Unit
V
F
V
I
R
nA
µA
µA
pF
ns
C
j
t
rr
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