1SS355
Silicon Epitaxial Planar Switching Diode
Features
• Small plastic package suitable
for surface mounted design
• High reliability with high surge
current handling capability
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Applications
•
High speed switching
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Peak Forward Current
Surge Forward Current (1 s)
Junction Temperature
Storage Temperature Range
Symbol
V
RM
V
R
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Value
90
80
100
225
500
150
- 55 to + 150
Unit
V
V
mA
mA
mA
O
C
C
O
Electrical Characteristics (T
a
= 25
O
C)
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 80 V
Capacitance between Terminals
at V
R
= 0.5 V, f = 1 MHz
Reverse Recovery Time
at V
R
= 6 V, I
F
= 10 mA, R
L
= 100
Ω
Symbol
V
F
I
R
C
T
t
rr
Max.
1.2
0.1
3
4
Unit
V
µA
pF
ns
1SS355
Forward Characteristics
1
1m
0.1m
Ta=125 C
Reverse Characteristics
100m
Forward Current, A
10m
Reverse current, A
Ta=125
Ta=75
Ta=25
Ta=-25
C
C
C
C
10
1
Ta=75 C
1m
100n
Ta=25 C
100
10n
1n
0
0.4
0.8
1.2
0
40
80
120
Forward Voltage, V
Reverse Voltage, V
10
Capacitance between terminals
characteristics
10
Reverse Recovery Time Characteristics
3
V
R
=6V
Reverse Recovery Time (ns)
I
rr=1/10
I
R
C
T
(pF)
2
1
2
1
0.2
0.1
0
4
8
12
14
0
10
20
30
Reverse Voltage, V
R
( V )
Forward Current (mA)
Surge Current Characteristics
100
Pulse
Single Pulse
Reverse Recovery Time Measurement Circuit
Surge Current (A)
20
10
0.01 F
DUT
PULSE GENERATOR
OUTPUT 50
2
1
0.1
5k
SAMPLING
OSCILLOSCOPE
1
10
100
1000
10000
Pulse Width: Tw (ms)
50
1SS355
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
H
E
D
A
E
b
p
UNIT
mm
A
1.10
0.80
b
p
0.40
0.25
C
0.15
0.00
D
1.80
1.60
E
1.35
1.15
H
E
2.80
2.30
1SS355
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
Q
A
A
1
c
L
p
H
E
D
A
E
b
UNIT
mm
A
1.10
0.80
A
1
0.1
0
b
p
0.40
0.25
C
0.15
0.00
D
1.80
1.60
E
1.35
1.15
H
E
2.80
2.30
L
p
0.50
0.10
Q
0.15
REF.
电子工程世界
