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2EZ39_R2_10001

Zener Diode

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
O-XALF-W2
Reach Compliance Code
_compli
ECCN代码
EAR99
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
DO-15
JESD-30 代码
O-XALF-W2
端子数量
2
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
2 W
标称参考电压
39 V
表面贴装
NO
技术
ZENER
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
5%
工作测试电流
12.8 mA
文档预览
2EZ6.8~2EZ51
SILICON ZENER DIODES
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• Lead free in compliance with EU RoHS 2011/65/EU directive
0.300(7.6)
0.230(5.8)
1.0(25.4)MIN.
6.8 to 51 Volt
POWER
2 Watt
0.034(0.86)
0.028(0.71)
• Low inductance
• Case: JEDEC DO-15, Molded plastic over passivated junction
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes cathode end
• Standard packing: 52mm tape
• Weight: 0.014 ounce, 0.0397 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Max Steady State Power Dissipation @T
L
<80
O
C (Note A)
Derate above T
A
=25
O
C
Peak Forward Surge Current 8.3ms single half sine-wave
soperimposed on rated load
Thermal resistance Junction to Ambient
Junction to Lead
Operating Junction and Storage Temperature Range
S ymb o l
P
D
I
FSM
R
JA
R
JL
T
J
, T
STG
1.0(25.4)MIN.
MECHANICAL DATA
0.140(3.6)
0.104(2.6)
Va lue
2
15
60
32
-55 to + 150
Uni t
Watts
Amps
o
C/W
o
C
NOTE:
A.Mounted on infinite heat sink with L=2mm
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
February 21,2014-REV.04
PAGE . 1
2EZ6.8~2EZ51
Nomi nal Zene r Vo ltag e
Part Number
No m. V
2.0 Watt ZENER
2EZ6.8
2EZ7.5
2EZ8.2
2EZ8.7
2EZ9.1
2EZ10
2EZ11
2EZ12
2EZ13
2EZ14
2EZ15
2EZ16
2EZ17
2EZ18
2EZ19
2EZ20
2EZ22
2EZ24
2EZ25
2EZ27
2EZ28
2EZ30
2EZ33
2EZ36
2EZ39
2EZ43
2EZ47
2EZ51
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
6.46
7.13
7.79
8.27
8.65
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
44.65
48.45
7.14
7.88
8.61
9.14
9.56
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
49.35
53.55
2
2
2
2
3
4
4
5
5
6
7
8
9
10
11
11
12
13
14
18
18
20
23
25
30
35
40
48
73.5
66.5
61
58
55
50
45.5
41.5
38.5
35.7
33.4
31.2
29.4
27.8
26.3
25
22.8
20.8
20
18.5
17
16.6
15.1
13.9
12.8
11.6
10.6
9.8
700
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
1
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
5
5
5
4
3
3
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
4
5
6
6.6
7
7.6
8.4
9.1
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
19
20.6
21.3
22.5
25.1
27.4
29.7
32.7
35.8
38.8
2EZ6.8
2EZ7.5
2EZ8.2
2EZ8.7
2EZ9.1
2EZ10
2EZ11
2EZ12
2EZ13
2EZ14
2EZ15
2EZ16
2EZ17
2EZ18
2EZ19
2EZ20
2EZ22
2EZ24
2EZ25
2EZ27
2EZ28
2EZ30
2EZ33
2EZ36
2EZ39
2EZ43
2EZ47
2EZ51
V
Z
@ I
ZT
Mi n. V
Max. V
Ma xi mum Ze ner Imp e da nce
Z
ZT
@ I
ZT
mA
Z
ZK
@ I
ZK
mA
uA
Leakage Current
I
R
@V
R
V
Marking Code
February 21,2014-REV.04
PAGE . 2
2EZ6.8~2EZ51
2.5
500
P
D
, Maximum Power Dissipation (W)
P
PK
, PEAK SURGE POWER (WATTS)
2
L=2mm
250
100
100
50
25
15
10
5
0.1 0.20.3 0.5
RECTAN GULAR
NON - REPETIT IVE
T
J
=25
O
C PRIOR
TOINTIA L PULSE
1.5
1
L
L
0.5
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
1
2 3
5
10 20 30 50
100
T
L
, Lead Temperature (
)
P.W.PULSE WIDTH(ms)
Fig.1 Power Temperature Derating Curve
FIGURE 2. MAXIMUM SURGE POWER
FIGURE 3. TYPICAL THERMAL RESPONSEL,
APPLICATION NOTE:
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction
temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
q
L
A
P
D
+ T
A
O
q
L
A
is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for
q
L
A
will vary and depends
on the device mounting method.
q
L
A
is generally 30-40
O
C/W for the various clips and tie points in common use and for printed
circuit board wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
T
J
= T
L
+
D
T
JL
D
T
JL
is the increase in junction temperature above the lead temperature and may be found from Figure 3 for a train of power pulses
or from Figure 10 for dc power.
D
T
JL
=
q
J
L
P
D
For worst-case design, using expected limits of I
Z
, limits of P
D
and the extremes of T
J
(
D
T
J
) may be estimated. Changes in voltage,
V
Z
, can then be found from:
D
V =
q
V
Z
D
T
J
q
V
Z
, the zener voltage temperature coefficient, is found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance.
For best regulation, keep current excursions as low as possible.
Data of Figure 3 should not be used to compute surge capa-bility. Surge limitations are given in Figure 2. They are lower than would
be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small
spots resulting in device degradation should the limits of Figure 2 be exceeded.
February 21,2014-REV.04
PAGE . 3
2EZ6.8~2EZ51
P
D
, Maximum Power Dissipation (W)
T
A
, Ambient temperature
(°C
)
FIGURE 8.TYPICAL THERMAL RESISTANCE
February 21,2014-REV.04
PAGE . 4
2EZ6.8~2EZ51
Part No_packing code_Version
2EZ6.8_AY_00001
2EZ6.8_AY_10001
2EZ6.8_B0_00001
2EZ6.8_B0_10001
2EZ6.8_R2_00001
2EZ6.8_R2_10001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
February 21,2014-REV.04
PAGE . 5
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