JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2N4402
TRANSISTOR (PNP)
1. EMITTER
FEATURES
General Purpose Amplifier Transistor
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test
conditions
Min
-40
-40
-5
-0.1
-0.1
30
50
50
20
-0.4
-0.75
-0.75
-0.95
-1.3
8.5
30
150
V
V
V
V
pF
pF
MHz
150
Typ
Max
Unit
V
V
V
μA
μA
I
C
= -0.1mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.1mA,I
C
=0
V
CB
=-40V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CB
=-10V,I
E
=0, f=1MHz
V
EB
=-0.5V,I
C
=0, f=1MHz
V
CE
=-10V,I
C
=-20mA, f=100MHz
DC current gain
h
FE
*
Collector-emitter saturation voltage
V
CE(sat)
*
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
Transition frequency
V
BE (sat)
C
ob
C
ib
f
T
*
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
A,Dec,2010
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