DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate
MOSFETS
2N7002
MOSFET (N-Channel)
SOT-23
FEATURES
High density cell design for low R
DS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
Marking: 7002
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Parameter
Drain-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
DS
I
D
P
D
R
θJA
T
J
T
stg
Value
60
0.115
0.225
556
150
-50 ~+150
Unit
V
A
W
℃/W
℃
1. GATE
2. SOURCE
3. DRAIN
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
Input Capacitance
*
Output Capacitance
*
Reverse Transfer Capacitance
*
Symbol
V
(BR)DSS
V
th(GS)
l
GSS
I
DSS
I
D(ON)
R
DS(on)
g
fs
V
DS(on)
V
SD
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
DD
=25 V, R
L
=50
Ω,
I
D
=500mA,V
GEN
=10 V
R
G
=25
Ω
20
40
ns
V
DS
=25V, V
GS
=0V, f=1MHz
Test
conditions
Min
60
1
̀
±80
80
500
7
7
80
0.5
0.05
0.55
3.75
0.375
1.2
50
25
5
pF
Typ
Max
Unit
V
nA
nA
mA
Ω
ms
V
V
V
V
GS
=0 V, I
D
=250
µA
V
DS
=V
GS
, I
D
=250
µA
V
DS
=0 V, V
GS
=±25 V
V
DS
=60 V, V
GS
=0 V
V
GS
=10 V, V
DS
=7 V
V
GS
=10 V, I
D
=500mA
V
GS
=5 V, I
D
=50mA
V
DS
=10 V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
I
S
=115mA, V
GS
=0 V
SWITCHING TIME
Turn-on Time
*
Turn-off Time
*
*These parameters have no way to verify.
D,Apr,2012
Typical Characteristics
Output Characteristics
1.0
2N7002
Transfer Characteristics
T
a
=25
℃
Pulsed
T
a
=25
℃
Pulsed
0.8
V
GS
=10V,9V,8V,7V,6V,5V
1.0
0.8
(A)
I
D
0.6
I
D
V
GS
=4V
DRAIN CURRENT
V
GS
=3V
V
GS
=2V
0
1
2
3
4
5
(A)
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
DRAIN CURRENT
2
4
6
8
10
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
N
—— I
D
8
6
R
DS(ON)
——
T
a
=25
℃
Pulsed
V
GS
T
a
=25
℃
Pulsed
(
Ω
)
6
(
Ω
)
R
DS(ON)
4
R
DS(ON)
I
D
=500mA
ON-RESISTANCE
4
ON-RESISTANCE
V
GS
=5V
I
D
=50mA
2
V
GS
=10V
2
0
0.0
0.2
0.4
0.6
0.8
1.0
0
0
6
12
18
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
1
T
a
=25
℃
Pulsed
SOURCE CURRENT
I
S
(A)
0.3
0.1
0.03
0.01
0.0
0.4
0.8
1.2
1.6
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
D,Apr,2012
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