2N7002E
N-Channel SMD MOSFET ESD Protection
60V N-Channel Enhancement
Mode MOSFET- ESD Protection
Features
•
R
DS(ON)
, V
GS
@10V, I
D
@500mA=3.0
Ω
•
R
DS(ON)
, V
GS
@4.5V, I
D
@200mA=4.0
Ω
•
ESD protection 2ΚV (Human body mode)
•
Advanced trench process technology.
•
High density cell design for ultra low on-resistance.
•
Very low leakage current in off condition
•
Specially designed for battery operated system,
•
•
solid-state relays drivers, relays, displays, lamps,
solenoids, memories, etc.
In compliance with EU RoHS 2002/95/EC directives.
Suffix "-H" indicates
Halogen-free part, ex. 2N7002E-H.
Package outline
SOT-23
0.045 (1.15)
0.034 (0.85)
0.020 (0.50)
(C)
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
(B)
(A)
0.063 (1.60)
0.047 (1.20)
0.027 (0.67)
0.013 (0.32)
0.108 (2.75)
0.083 (2.10)
0.007 (0.18)
0.003 (0.09)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-23
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.051 (1.30)
0.035 (0.89)
•
Mounting Position : Any
•
Weight : Approximated 0.008 gram
Dimensions in inches and (millimeters)
M
aximum ratings
(AT T
PARAMETER
Drain-Source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
1)
A
=25
o
C unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
Ratings
60
±20
300
2000
UNIT
V
V
mA
mA
PARAMETER
P
D
@T
A
= 25°C
P
D
@ T
A
=75°C
Operation junction and storage temperature range
Thermal resistance(PCB mounted)
2)
Symbol
MIN.
TYP.
0.012 (0.30)
MAX.
0.35
0.21
UNIT
Total power dissipation
P
D
W
T
J
, T
STG
Junction to ambient
R
θ
JA
-55
357
+150
o
o
C
C/W
Note : 1. Maximum DC current limited by package
2. Surface mounted on FR4 board, t < 5 sec
http: www.anbonsemi.com
TEL:886-755-23776891
FAX: 886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
5
Page 1
AS-3150002
2N7002E
N-Channel SMD MOSFET ESD Protection
Electrical characteristics
(AT T =25 C unless otherwise noted)
o
A
STATIC
PARAMETER
Drain-source Breakdown Voltage
Gate Threshold Voltage
CONDITIONS
V
GS
= 0V, I
D
= 10µA
V
DS
= V
GS
, I
D
= 250µA
Symbol
BV
DSS
V
GS(th)
MIN.
60
1.0
2.5
TYP.
MAX.
UNIT
V
V
V
GS
= 10V, I
D
= 500mA
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 200mA
3.0
R
DS(on)
4.0
Ω
Zero Gate Voltage Drai n Current
V
DS
= 60V, V
GS
= 0V
I
DSS
1
µA
Gate-Body leakage Current
Forward TransConductance
V
GS
=
±20V,
V
DS
= 0V
V
DS
= 15V, I
D
= 250mA
I
GSS
g
fS
100
±10
µA
ms
DYNAMIC
V
DS
= 15V, I
D
= 200mA
V
GS
= 4.5V
V
DD
= 30V, R
L
= 150Ω, I
D
= 200mA,
V
gen
= 10V, R
G
= 10Ω
Total Gate Charge
Q
g
0.8
nC
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
t
on
t
off
C
iss
20
ns
40
35
10
5
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0 MHz
C
oss
C
rss
Source-Drain Diode
Diode Forward Voltage
I
S
=200mA, V
GS
=0V
V
SD
0.82
1.3
V
Switching
Test Circuit
V
DD
Gate Charge
Test Circuit
V
DD
R
L
V
IN
D
V
OUT
1mA
DUT
R
L
V
GS
D
V
GS
R
G
G
V
GS
G
R
G
DUT
S
S
http: www.anbonsemi.com
TEL:886-755-23776891
FAX: 886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
5
Page 2
AS-3150002
Rating and characteristic curves (2N7002E)
Fig.1 Output Characteristic
I
D
- Drain-to-Source Current (A)
I
D
- Drain Source Current (A)
Fig.2 Transfer Characteristic
V
GS
= 6.0~10V
5.0V
V
DS
= 10V
4.0V
3.0V
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current
5
Fig.4 On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Ω)
5
R
DS(ON)
- On-Resistance(Ω)
4
4
3
V
GS
= 4.5V
3
I
D
= 500mA
2
2
I
D
= 200mA
1
V
GS
= 10V
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
3
4
5
6
7
8
9
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
R
DS(ON)
- On-Resistance(Normalized)
V
GS
= 10V
I
D
= 500mA
T
J
- Junction Temperature (°C)
http: www.anbonsemi.com
TEL:886-755-23776891
FAX: 886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
5
Page 3
AS-3150002
Rating and characteristic curves (2N7002E)
Fig. 6 Gate Charge Waveform
V
GS
- Gate-to-Source Voltage (V)
10
V
DS
= 10V
Fig.7 Gate Charge
Vgs
Qg
8
I
D
= 250mA
6
4
2
Vgs(th)
Qg(th)
Qgs
Qsw
0
0
0.2
0.4
0.6
0.8
1.0
Qgd
Qg
Qg - Gate Charge (nC)
Fig.8 Threshold Voltage vs Temperature
V
th
- G-S Threshold Voltage (NORMALIZED)
Fig.9 Breakdown Voltage vs Junction Temperature
90
BV
DSS
-Breakdown Voltage (V)
I
D
= 250uA
88
86
84
82
80
78
76
74
72
-50
I
D
= 250uA
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
J
- Junction Temperature (°C)
Fig.10 Source-Drain Diode Forward Voltage
10
V
GS
= 0V
I
S
- Source Current (A)
1
25 C
o
125 C
o
0.1
-55 C
o
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
SD
- Source-to-Drain Voltage (V)
http: www.anbonsemi.com
TEL:886-755-23776891
FAX: 886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
5
Page 4
AS-3150002
2N7002E
N-Channel SMD MOSFET ESD Protection
Pinning information
Pin
PinD
PinG
PinS
Drain
Gate
Source
G
S
Simplified outline
D
Symbol
Drain
Gate
Source
Marking
Type number
2N7002E
Marking code
7002E
72K
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
Reel packing
PACKAGE
REEL SIZE
REEL
(pcs)
3,000
COMPONENT
SPACING
(m/m)
4.0
BOX
(pcs)
30,000
INNER
BOX
(m/m)
183*123*183
REEL
DIA,
(m/m)
178
CARTON
SIZE
(m/m)
382*257*387
CARTON
(pcs)
240,000
APPROX.
GROSS WEIGHT
(kg)
11.6
SOT-23
7"
http://www.anbonsemi.com
TEL:886-755-27188611
FAX: 886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
5
Page 5
AS-3150002
电子工程世界
