Plastic-Encapsulate Transistors
FEATURES
High voltage and high current
Excellent
Low niose
hFE
Linearity
2SA1015
(PNP)
,Complementary to C1815
MARKING
:
BA
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-50
-50
-5
-0.15
0.2
150
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
P
C
T
J
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
unless otherwise specified)
Symbol
VCBO
VCEO
VEBO
ICB
O
ICE
O
IEB
O
hFE
VCE(sat)
VBE(sat)
fT
Test
conditions
IE=0
Min
-50
-50
-5
-0.1
-0.1
-0.1
130
400
-0.3
-1.1
80
V
V
MHz
Typ
Max
Unit
V
V
V
uA
uA
uA
IC= -100u A,
IC= -0.1mA, IB=0
IE= -100 u A, IC=0
VCB=-50V ,
VCE= -50V ,
VEB=- 5V,
VCE=-6V,
IE=0
IB=0
IC=0
IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
VCE=-10V,
f=30MHz
IC= -1mA
CLASSIFICATIONOF h
FE
Rank
Range
L
130-200
H
200-400
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Transistors
2SA1015
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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