JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SA1082
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Low Frequency Amplifier
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-0.1
400
312
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
-120
-120
-5
-0.1
-0.1
250
-0.6
3.5
90
800
-0.2
V
V
pF
MHz
Typ
Max
Unit
V
V
V
μA
μA
I
C
=- 0.01mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.01mA,I
C
=0
V
CB
=-50V,I
E
=0
V
EB
=-2V,I
C
=0
V
CE
=-12V, I
C
=-2mA
I
C
=-10mA,I
B
=-1mA
V
CE
=-12V, I
C
=-2mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-12V,I
C
=-2mA
CLASSIFICATION OF h
FE
RANK
RANGE
D
250-500
E
400-800
A,Dec,2010
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