JMnic
Product Specification
Silicon PNP Power Transistors
2SA1262
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC3179
APPLICATIONS
・Audio
and general purpose
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-60
-60
-6
-4
-1
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-25mA ,I
B
=0
I
C
=-2A; I
B
=-0.2A
V
CB
=-60V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
E
=0.2A ; V
CE
=-12V
I
E
=0 ; V
CB
=-10V ;f=1MHz
40
MIN
-60
2SA1262
TYP.
MAX
UNIT
V
-0.6
-100
-100
V
μA
μA
15
90
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-2A ;I
B1
=- I
B2
=-0.2A
R
L
=10Ω;V
CC
=-20V
0.25
0.75
0.25
μs
μs
μs
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1262
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1262
4