JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SA1611
TRANSISTOR (PNP)
FEATURES
High DC Current Gain
High Voltage
Complementary to 2SC4177
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-100
150
833
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
SOT–323
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V, I
C
=-1mA
V
CE
=-6V,I
c
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
-0.58
180
4.5
90
Min
-60
-50
-5
-100
-100
600
-0.3
-0.68
V
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
M4
90–180
M4
M5
135–270
M5
M6
200–400
M6
M7
300–600
M7
B,Mar,2012
Typical Characterisitics
-4
2SA1611
h
FE
——
I
C
COMMON EMITTER
V
CE
=-6V
T
a
=100
℃
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
DC CURRENT GAIN
300
(mA)
-20uA
-3
I
C
-18uA
-16uA
-14uA
200
COLLECTOR CURRENT
T
a
=25
℃
-2
-12uA
-10uA
-8uA
100
-1
-6uA
-4uA
I
B
=-2uA
-0
-0
-2
-4
-6
-8
-10
0
-0.1
-0.3
-1
-3
-10
-30
-100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-500
V
CEsat
——
I
C
-1.2
V
BEsat
——
I
C
-300
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-0.8
T
a
=25
℃
-100
T
a
=100
℃
T
a
=25
℃
-30
T
a
=100
℃
-0.4
β=10
-10
-0.3
-1
-3
-10
-30
-100
-0.0
-0.2
-0.5
-1
-3
-10
-30
β=10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-100
I
C
COMMON EMITTER
V
CE
=-6V
—— V
BE
20
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
-30
10
-10
Cib
Cob
T
a
=25
℃
T
a
=100
℃
COLLECTOR CURRENT
-3
-1
T
a
=25
℃
CAPACITANCE
C
3
-0.3
-0.1
-0.2
1
-0.1
(pF)
I
C
-0.4
-0.6
-0.8
-1.0
-0.3
-1
-3
-10
-20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
300
f
T
—— I
C
V
CE
=-6V
T
a
=25
℃
COLLECTOR POWER DISSIPATION
P
C
(mW)
200
P
C
—— T
a
(MHz)
150
TRANSITION FREQUENCY
f
T
200
100
50
100
-1
-3
-10
-30
0
-100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Mar,2012
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