JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SA1664
TRANSISTOR (PNP)
1. BASE
FEATURES
Small Flat Package
High Current Application
High Transition Frequency
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-0.8
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
C
ob
f
T
Test conditions
I
C
=-1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-35V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-700mA
I
C
=-500mA,I
B
=-20mA
V
CE
=-1V, I
C
=-10mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-5V,I
C
=-10mA,
-0.5
19
120
100
35
-0.7
-0.8
V
V
pF
MHz
Min
-35
-30
-5
-100
-100
320
Typ
Max
Unit
V
V
V
nA
nA
CLASSIFICATION OF h
FE
(1)
RANK
RANGE
MARKING
O
100–200
RO
Y
160–320
RY
A,Nov,2010
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