JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SA608S
FEATURES
1. EMITTER
TRANSISTOR (PNP)
TO-92S
Power dissipation
2. COLLECTOR
P
CM
:
300 mW (Tamb=25℃)
3. BASE
Collector current
I
CM
:
-100 mA
Collector-base voltage
V
(BR)CBO
: -40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
Cob
unless otherwise specified)
Test
conditions
MIN
-40
-30
-5
-1
-1
60
560
-0.5
180
7
V
MHz
pF
TYP
MAX
UNIT
Ic=-100µA, I
E
=0
Ic=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-25V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-6V, I
C
=-10mA
V
CB
=-6V, f=1MHz
V
V
V
µA
µA
CLASSIFICATION OF h
FE
Rank
Range
D
60-120
E
100-200
F
160-320
G
280-560
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