JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SA719/2SA720
TRANSISTOR (PNP)
TO-92
FEATURES
For
Low-Frequency Power Amplification
and
Driver Amplification
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
1. EMITTER
2. COLLECTOR
3. BASE
Symbol
V
CBO
Parameter
Collector-Base Voltage
2SA719
2SA720
Value
-30
-60
-25
-50
-5
-500
625
150
-55-150
Unit
V
V
CEO
Collector-Emitter Voltage
2SA719
2SA720
V
V
mA
mW
℃
℃
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
2SA719
2SA720
Collector-emitter breakdown voltage
2SA719
2SA720
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Cob
I
E
= -10uA, I
C
=0
V
CB
= -20V,I
E
=0
V
EB
= -4V,I
C
=0
V
CE
=-10V, I
C
= -150mA
V
CE
=-10V, I
C
= -500mA
I
C
=-300mA, I
B
= -30mA
I
C
= -300mA, I
B
=-30mA
V
CE
= -10V, I
C
= -50mA
f = 200MHz
V
CB
=-10V,I
E
=0,f=1MH
Z
200
15
85
40
-0.6
-1.5
V
V
MHz
pF
V
(BR)CEO
I
C
= -10mA ,I
B
=0
-25
-50
-5
-0.1
-0.1
340
V
uA
uA
V
V
(BR)CBO
I
C
= -10uA, I
E
=0
-30
-60
V
Symbol
Test
conditions
Min
Typ
Max
Unit
CLASSIFICATION h
FE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340
Typical Characterisitics
Static Characteristic
-250
1000
2SA719/2SA720
h
FE
—— I
C
-1.0mA
(mA)
-200
COMMON
EMITTER
T
a
=25
℃
T
a
=100
℃
h
FE
DC CURRENT GAIN
-0.9mA
-0.8mA
-0.7mA
-0.6mA
I
C
-150
COLLECTOR CURRENT
T
a
=25
℃
100
-100
-0.5mA
-0.4mA
-0.3mA
-50
-0.2mA
I
B
=-0.1mA
-0
-3
-6
-9
-12
-15
COMMON EMITTER
V
CE
= -10V
10
-5
-10
-100
-500
-0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
CEsat
——
I
C
-2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-1
T
a
=25
℃
-100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
β=10
-10
-0.3
β=10
-0.1
-500
-1
-10
-100
-500
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
-500
—— V
BE
1000
f
T
——
I
C
(mA)
-100
I
C
-10
TRANSITION FREQUENCY
COLLECTOR CURRENT
T=
a
10
0
℃
T=
a
25
℃
f
T
100
-1
(MHz)
COMMON EMITTER
V
CE
=-10V
-0.1
-0.0
-0.3
-0.6
-0.9
-1.2
COMMON EMITTER
V
CE
=-10V
T
a
=25
℃
10
-3
-10
-100
BASE-EMMITER VOLTAGE V
BE
(V)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
700
P
C
——
T
a
600
C
ib
(pF)
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
500
C
400
CAPACITANCE
10
C
ob
300
200
100
1
-0.1
0
-1
-10
-20
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
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