JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
2SA854S
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Large I
C
.
Low V
CE(sat)
. Idea for Low-voltage Operation.
Complements the 2SC1741S.
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-0.5
200
625
150
-55~+150
2. COLLECTOR
3. BASE
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
Test
conditions
Min
-40
-32
-5
-1
-1
120
8
200
390
-0.4
V
pF
MHz
Typ
Max
Unit
V
V
V
μA
μA
I
C
= -0.1mA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-0.1mA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V, I
C
=-10mA
I
C
=-100mA,I
B
=-10mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-5V,I
C
=-20mA, f=100MHz
CLASSIFICATION OF h
FE
RANK
RANGE
Q
120-270
R
180-390
A,Dec,2010
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